1. An apparatus for securing a communication, the apparatus comprising:
a memory;
a processor executing instructions stored in the memory and that prepares the communication for transmission;
a network communication interface; and
a display that displays a user interface including a plurality of settings, one or more of which is a user selectable biometric setting that identifies one or more biometric inputs required to be input by a recipient, wherein the recipient is an addressee identified in the communication, and the recipient inputs the one or more required biometric inputs over one or more sensors at a recipient electronic device before at least a portion of the communication can be opened by the recipient.
2. The apparatus of claim 1, wherein the user interface includes a plurality of selectable communication types.
3. The apparatus of claim 2, wherein the plurality of selectable communication types are at least one of a text, an email, a document, an instant message, a group message, a video telephonic communication, an online meeting communication, a Cloud communication, a VPN communication, a calendar communication, a video communication, a voice mail, and a voice communication.
4. The apparatus of claim 2, wherein a particular selectable communication type of the plurality of communication types included in the user interface corresponds to an icon of the particular selectable communication type.
5. The apparatus of claim 1, wherein the one or more biometric inputs is at least one of a fingerprint, a voice input, an image of a face, a retinal input, and an iris input.
6. The apparatus of claim 1, wherein the plurality of settings are operating system settings.
7. The apparatus of claim 1, wherein the apparatus is at least one of a mobile phone, a smart phone, a tablet computer, a desk computer, and a set top box.
8. A method for securing a communication, the method comprising:
receiving the communication composed by a user of an a user electronic device, wherein the communication is composed over a user interface at the user electronic device;
displaying a plurality of settings on the user interface, wherein one or more of the plurality of settings is a user selectable biometric setting;
receiving a selection over the user interface of one or more biometric inputs, wherein the one or more biometric inputs lock at least a portion of the communication, and the one or more biometric inputs are required to be input by a recipient of the communication before the at least portion of the communication can be opened by the recipient at a recipient electronic device; and
transmitting the communication over a network communication interface at the user electronic device, wherein the recipient cannot access the at least portion of the communication until after the recipient enters the one or more biometric inputs over one or more sensors at the recipient electronic device.
9. The method of claim 8, wherein the user interface includes a plurality of selectable communication types.
10. The method of claim 9, wherein the plurality of selectable communication types are at least one of a text, an email, a document, an instant message, a group message, a video telephonic communication, an online meeting communication, a Cloud communication, a VPN communication, a calendar communication, a video communication, a voice mail and a voice communication.
11. The method of claim 9, wherein a particular selectable communication type of the plurality of communication types included in the user interface corresponds to an icon of the particular selectable communication type.
12. The method of claim 8, wherein the one or more biometric inputs is at least one of a fingerprint, a voice input, an image of a face, a retinal input, and an iris input.
13. The method of claim 8, wherein the plurality of settings are operating system settings.
14. The method of claim 13, wherein the user electronic device is at least one of a mobile phone, a smart phone, a tablet computer, a desktop computer, and a set top box.
15. A non-transitory computer readable storage medium having embodied thereon a program executable by a processor to perform a method for securing a communication, the method comprising:
receiving the communication composed by a user of an a user electronic device, wherein the communication is composed over a user interface at the user electronic device;
displaying a plurality of settings on the user interface, wherein one or more of the plurality of settings is a user selectable biometric setting;
receiving a selection over the user interface of one or more biometric inputs, wherein the one or more biometric inputs lock at least a portion of the communication, and the one or more biometric inputs are required to be input by a recipient of the communication before the at least portion of the communication can be opened by the recipient at a recipient electronic device; and
transmitting the communication over a network communication interface at the user electronic device, wherein the recipient cannot access the at least portion of the communication until after the recipient enters the one or more biometric inputs over one or more sensors at the recipient electronic device.
16. The non-transitory computer readable storage medium of claim 15, wherein the user interface includes a plurality of selectable communication types.
17. The non-transitory computer readable storage medium of claim 16, wherein the plurality of selectable communication types are at least one of a text, an email, a document, an instant message, a group message, a video telephonic communication, an online meeting communication, a Cloud communication, a VPN communication, a calendar communication, a video communication, a voice mail, and a voice communication.
18. The non-transitory computer readable storage medium of claim 16, wherein a particular selectable communication type of the plurality of communication types included in the user interface corresponds to an icon of the particular selectable communication type.
19. The non-transitory computer readable storage medium of claim 15, wherein the one or more biometric inputs is at least one of a fingerprint, a voice input, an image of a face, a retinal input, and an iris input.
20. The non-transitory computer readable storage medium of claim 15 wherein the plurality of settings are operating system settings.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A nonvolatile semiconductor storage comprising:
memory cells, each of which is configured using a field effect transistor and includes n (n is an integer equal to or larger than 2) anti-fuse elements, one ends of which are connected in common;
an internal potential generating circuit that generates a program voltage for breaking down a gate insulating film of the field effect transistor;
a program voltage selection circuit that selects, out of the n anti-fuse elements, an anti-fuse element to which the program voltage is applied;
a sense amplifier that is provided for each of the memory cells and determines, based on data stored in the n anti-fuse elements, three or more readout levels;
a barrier transistor that is provided for each of the memory cells and protects the sense amplifier from the voltage for breaking down the gate insulating film; and
a selection transistor that is provided for each of the memory cells and selects a memory cell to which the program voltage is applied.
2. The nonvolatile semiconductor storage of claim 1, wherein transistor sizes or silicide densities of gate electrodes of the field effect transistors of the n anti-fuse elements are different from one another or same one another or field effect transistors having different transistor sizes or silicide densities of gate electrodes and field effect transistors having same transistor sizes or silicide densities of gate electrodes are mixed.
3. The nonvolatile semiconductor storage of claim 1, further comprising a threshold variable circuit that changes a threshold of the sense amplifier according to the three or more readout levels of the memory cell.
4. The nonvolatile semiconductor storage of claim 1, wherein the sense amplifier includes a plurality of sense amplifiers having thresholds different from one another according to the three or more readout levels of the memory cell.
5. The nonvolatile semiconductor storage of claim 1, further comprising:
a fuse data register that is provided for each of the memory cells and stores data read out by the sense amplifier; and
a selector that selects the data read out by the sense amplifier or a value stored in a fuse data register at a pre-stage and outputs the data or the value to the fuse data register at an own stage.
6. The nonvolatile semiconductor storage according to claim 1, wherein the program voltage selection circuit is n switching transistors that are connected in series for each of the anti-fuse elements and switch the anti-fuse element to which the program voltage is applied.
7. The nonvolatile semiconductor storage of claim 6, wherein transistor sizes or silicide densities of gate electrodes of the field effect transistors of the n anti-fuse elements are different from one another or same one another or field effect transistors having different transistor sizes or silicide densities of gate electrodes and field effect transistors having same transistor sizes or silicide densities of gate electrodes are mixed.
8. The nonvolatile semiconductor storage of claim 6, further comprising a threshold variable circuit that changes a threshold of the sense amplifier according to the three or more readout levels of the memory cell.
9. The nonvolatile semiconductor storage of claim 6, wherein the sense amplifier includes a plurality of sense amplifiers having thresholds different from one another according to the three or more readout levels of the memory cell.
10. The nonvolatile semiconductor storage of claim 6, further comprising:
a fuse data register that is provided for each of the memory cells and stores data read out by the sense amplifier; and
a selector that selects the data read out by the sense amplifier or a value stored in a fuse data register at a pre-stage and outputs the data or the value to the fuse data register at an own stage.
11. A nonvolatile semiconductor storage comprising:
memory cells, each of which is configured using a field effect transistor and includes n (n is an integer equal to or larger than 2) anti-fuse elements, one ends of which are connected in common;
an internal potential generating circuit that generates a program voltage for breaking down a gate insulating film of the field effect transistor;
a program voltage selection circuit that selects, out of the n anti-fuse elements, an anti-fuse element to which the program voltage is applied;
a sense amplifier that determines, based on data stored in the n anti-fuse elements, three or more readout levels;
a writing transistor that is provided for each of the memory cells and performs writing in the n anti-fuse elements;
a readout transistor that is provided for each of the memory cells and performs readout from the n anti-fuse elements;
a writing control transistor that is provided for each of the memory cells and connected to the writing transistor in series; and
a readout barrier transistor that is provided for each of the memory cells and connected to the readout transistor in series.
12. The nonvolatile semiconductor storage of claim 11, wherein transistor sizes or silicide densities of gate electrodes of the field effect transistors of the n anti-fuse elements are different from one another or same one another or field effect transistors having different transistor sizes or silicide densities of gate electrodes and field effect transistors having same transistor sizes or silicide densities of gate electrodes are mixed.
13. The nonvolatile semiconductor storage of claim 11, further comprising a threshold variable circuit that changes a threshold of the sense amplifier according to the three or more readout levels of the memory cell.
14. The nonvolatile semiconductor storage of claim 11, wherein the sense amplifier includes a plurality of sense amplifiers having thresholds different from one another according to the three or more readout levels of the memory cell.
15. The nonvolatile semiconductor storage of claim 11, wherein
the memory cells are arranged in a matrix shape in a row direction and a column direction, and
the sense amplifier is provided for the each column.
16. A nonvolatile semiconductor storage comprising:
memory cells, each of which is configured using a field effect transistor and includes n (n is an integer equal to or larger than 2) anti-fuse elements, one ends of which are connected in common;
an internal potential generating circuit that generates a program voltage for breaking down a gate insulating film of the field effect transistor;
n switching transistors that are connected in series for each of the anti-fuse elements and switch an anti-fuse element to which the program voltage is applied;
a sense amplifier that determines, based on data stored in the n anti-fuse elements, three or more values of readout levels;
a writing transistor that is provided for each of the memory cells and performs writing in the n anti-fuse elements;
a readout transistor that is provided for each of the memory cells and performs readout from the n anti-fuse elements;
a writing control transistor that is provided for each of the memory cells and connected to the writing transistor in series; and
a readout barrier transistor that is provided for each of the memory cells and connected to the readout transistor in series.
17. The nonvolatile semiconductor storage of claim 16, wherein transistor sizes or silicide densities of gate electrodes of the field effect transistors of the n anti-fuse elements are different from one another or same one another or field effect transistors having different transistor sizes or silicide densities of gate electrodes and field effect transistors having same transistor sizes or silicide densities of gate electrodes are mixed.
18. The nonvolatile semiconductor storage of claim 16, further comprising a threshold variable circuit that changes a threshold of the sense amplifier according to the three or more readout levels of the memory cell.
19. The nonvolatile semiconductor storage of claim 16, wherein the sense amplifier includes a plurality of sense amplifiers having thresholds different from one another according to the three or more readout levels of the memory cell.
20. The nonvolatile semiconductor storage of claim 16, further comprising:
a fuse data register that is provided for each of the memory cells and stores data read out by the sense amplifier; and
a selector that selects the data read out by the sense amplifier or a value stored in a fuse data register at a pre-stage and outputs the data or the value to the fuse data register at an own stage.