1-13. (canceled)
14. An apparatus, comprising:
an image sensor disposed in spaced relation to a drip chamber; and
at least one processor in communication with the image sensor to receive image data from the image sensor, wherein the at least one processor is configured to:
capture an image of the drip chamber using the image sensor,
match a template within the captured image, and
estimate flow through the drip chamber in accordance with the matched template.
15. The apparatus according to claim 14, wherein the at least one processor is further configured to identify an edge of a drop within the image in accordance with the matched template.
16. The apparatus according to claim 1, wherein the at least one processor is further configured to control a control system in accordance with the estimated flow.
17. The apparatus according to claim 14, further comprising a valve configured to control flow through the drip chamber.
18. The apparatus according to claim 17, further comprising a control system configured to actuate the valve in accordance with the estimated flow through the drip chamber using the matched template matched within the captured image.
19. The apparatus according to claim 14, wherein the at least one processor is further configured to move the template to a second position different from a first position when the template is matched to the captured image.
20. An apparatus, comprising:
an image sensor disposed in spaced relation to a drip chamber; and
at least one processor in communication with the image sensor to receive image data from the image sensor, wherein the at least one processor is configured to:
capture a first image of the drip chamber using the image sensor,
detect a first edge of a drop using a template,
capture a second image of the drip chamber using the image sensor,
detect a second edge of the drop using the template,
estimate flow through the drip chamber in accordance with the detected first and second edges of the drop as found within the first and second images, respectively, and
control a growth of the drop as indicated by the first and second detected edges of the drop.
21. The apparatus according to claim 20, further comprising a valve configured to couple to a fluid tube in fluid communication with the drip chamber, wherein the at least one processor is further configured to control actuation of the valve, and the at least one processor is configured to control a growth rate of the drop to thereby regulate fluid flow through the drip chamber.
22. The apparatus according to claim 20, wherein the at least one processor is configured to:
average pixels within a first result of the template to determine a first average;
move the template to a second position;
average pixels within a second result of the template when in the second position to determine a second average; and
determine the template is located at the first edge of the drop if a difference between the second average and the first average is greater than a predetermined threshold value.
23. The apparatus according to claim 20, wherein the at least one processor is configured to correlate the growth of the drop with the estimated flow through the drip chamber.
24. The apparatus according to claim 20, wherein the at least one processor is configured to:
capture a plurality of images including the first and second images of the drip chamber using the image sensor;
estimate a growth rate of the drop within the drip chamber using the plurality of images;
receive a set point corresponding to a fluid flow rate through a fluid tube coupled to the drip chamber;
adjust a control system in accordance with the estimated growth rate of the drop to achieve the set point corresponding to the fluid flow rate through the fluid tube; and
output a control signal from the control system to an actuator of a valve coupled to the fluid tube to control actuation of the valve in accordance with the adjusted control system.
25. The apparatus according to claim 20, wherein the at least one processor determines an existence of a free flow condition using a plurality of images.
26. The apparatus according to claim 20, further comprising a background pattern positioned within a field of view of the image sensor, wherein the drip chamber is between the image sensor and the background pattern.
27. The apparatus according to claim 26, wherein the at least one processor estimates at least one parameter using a plurality of images by analyzing a distortion of the background pattern caused by the liquid within the field of view as viewed by the image sensor.
28. The apparatus according to claim 27, wherein the background pattern is an array of lines having at least one angle relative to an opening of the drip chamber when viewed from the image sensor within the field of view using the plurality of images.
29. The apparatus according to claim 28, wherein the at least processor determines a free flow condition exists when the liquid causes the array of lines to change angles by distortion caused by the liquid when in the free flow condition as viewed within the field of view from the image sensor.
30. The apparatus according to claim 20, wherein the at least one processor is configured to:
select a region of interest of the image sensor;
determine if a pixel of the image sensor is within the region of interest;
activate a light of a backlight if the pixel of the image sensor is within the region of interest; and
expose the pixel of the image sensor.
31. The apparatus according to claim 20, further comprising a light adapted to provide light for the image sensor, wherein the at least one processor is configured to:
subtract the first image from a background image to thereby generate a difference image;
convert each pixel of the difference image to a true value if an absolute value of a respective pixel is beyond a predetermined threshold or to a false value if the absolute value of the respective pixel is less than the predetermined threshold;
sum each row of the converted difference image to generate a plurality of summation values, wherein each summation value of the plurality of summation values corresponds to a respective row of the converted difference image; and
examine the plurality of summation values.
32. The apparatus according to claim 20, wherein the at least one processor is configured to determine a pattern match score to detect the first edge of the drop using the template.
33. The apparatus according to claim 20, wherein edge detection is performed on the first image.
34. The apparatus according to claim 20, wherein line detection is performed on the first image.
35. The apparatus according to claim 20, wherein the at least one processor is configured to move the template to match the template to the first and second edges of the drop.
36. The apparatus according to claim 20, wherein the at least one processor compares at least one of the first and second images to a background image.
37. The apparatus according to claim 20, wherein the first image is subtracted from a background image to thereby generate a difference image.
38. The apparatus according to claim 20, further comprising a background pattern positioned behind the drip chamber relative to a field of view of the image sensor.
39. The apparatus according to claim 20, further comprising a transceiver configured to communicate with a monitoring client.
40. The apparatus according to claim 39, wherein the apparatus is configured to be remotely controlled by a monitoring client.
41. The apparatus according to claim 40, wherein the monitoring client is a tablet.
42. The apparatus according to claim 20, wherein the at least one processor compares the first image to a reference image to estimate the first edge of the drop.
43. The apparatus according to claim 42, wherein the reference image is a dynamic reference image.
44. The system according to claim 20, further comprising a background pattern positioned within a field of view of the image sensor, wherein the drip chamber is between the image sensor and the background pattern.
45. An apparatus, comprising:
an image sensor disposed in spaced relation to a drip chamber;
at least one processor in communication with the image sensor to receive image data from the image sensor, wherein the at least one processor is configured to:
capture a first image of the drip chamber using the image sensor;
detect a first edge of a drop using a template;
capture a second image of the drip chamber using the image sensor;
detect a second edge of the drop using the template; and
control a growth of the drop as indicated by the first and second detected edges of the drop.
46. The apparatus according to claim 45, where the at least one processor is configured to control a drop growth rate as indicated by the first and second detected edges of the drop to thereby control the growth of the drop.
47. The apparatus according to claim 45, wherein the at least one processor is further configured to:
estimate a growth of the drop within the drip chamber in accordance with the first and second edges of the drop as found within the first and second images, respectively, and
estimate flow through the drip chamber in accordance with the estimated growth of the drop within the drip chamber.
48. The apparatus according to claim 45, further comprising a valve configured to couple to a fluid tube in fluid communication with the drip chamber, wherein the at least one processor is further configured to control actuation of the valve, and the at least one processor is configured to control a drop growth rate of the drop to thereby regulate the fluid flow through the drip chamber.
49. The apparatus according to claim 45, wherein the at least one processor is further configured to:
average pixels within a first result of the template to determine a first average,
move the template to a second position,
average pixels within a second result of the template when in the second position to determine a second average, and
determine the template is located at least one of the first edge and the second edge of the drop if a difference between the second average and the first average is greater than a predetermined threshold value.
50. The apparatus according to claim 45, wherein the at least one processor is configured to correlate the growth of the drop with an estimated flow of fluid through the drip chamber.
51. The apparatus according to claim 45, wherein the at least one processor is configured to:
capture a plurality of images including the first and second images of the drip chamber using the image sensor;
estimate a growth rate of the drop within the drip chamber using the plurality of images;
receive a set point corresponding to a fluid flow rate through a fluid tube coupled to the drip chamber;
adjust a control system in accordance with the estimated drop growth rate of the drop to achieve the set point corresponding to the fluid flow rate through the fluid tube; and
output a control signal from the control system to an actuator of a valve coupled to the fluid tube to control actuation of the valve in accordance with the adjusted control system such that the growth of the drop is controlled to achieve the set point of the control system.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is;
1. A nitride semiconductor of p-type BpAlqGarInsN (0p1, 0q1, 0r1, 0s1, pqrs1), having a point defect concentration of 11019 cm3 or more, thereby making it possible to obtain a high carrier concentration.
2. A nitride semiconductor luminescence device comprising nitride semiconductor layers made of p-type BpAlqGarInsN (0p1, 0q1, 0r1, 0s1, pqrs1), wherein at least one of said p-type nitride semiconductor layers has a point defect concentration of 11019 cm3 or more, thereby making it possible to obtain a high carrier concentration.
3. A method for producing a p-type nitride semiconductor of BpAlqGarInsN (0p1, 0q1, 0r1, 0s1, pqrs1), wherein said p-type nitride semiconductor having a point defect concentration of 11019 cm3 or more is grown.
4. A method for producing a nitride semiconductor luminescence device comprising p-type nitride semiconductor layers made of BpAlqGarInsN (0p1, 0q1, 0r1, 0s1, pqrs1),
wherein at least one of said p-type nitride semiconductor layers is grown to be a p-type nitride semiconductor having a point defect concentration of 11019 cm3 or more.
5. A method for producing a p-type nitride semiconductor of BpAlqGarInsN (0p1, 0q1, 0r1, 0s1, pqrs1),
wherein the supplying ratio VIII of a V group raw material to a III group raw material is set to 1000-5000 to grow said p-type nitride semiconductor.
6. A method for producing a nitride semiconductor luminescence device comprising p-type nitride semiconductor layers made of BpAlqGarInsN (0p1, 0q1, 0r1, 0s1, pqrs1),
wherein at least one of said p-type nitride semiconductor layers is grown in the manner that the supplying ratio VIII of a V group raw material to a III group raw material is set to 1000-5000.
7. A method for producing a p-type nitride semiconductor of BpAlqGarInsN (0p1, 0q1, 0r1, 0s1, pqrs1),
wherein said p-type nitride semiconductor is grown at a growing rate of 4 mhour or more.
8. A method for producing a nitride semiconductor luminescence device comprising p-type nitride semiconductor layers made of BpAlqGarInsN (0p1, 0q1, 0r1, 0s1, pqrs1),
wherein at least one of said p-type nitride semiconductors is grown at a growing rate of 4 mhour or more.
9. The method for producing a nitride semiconductor according to claim 5, wherein upon the growth of said p-type nitride semiconductor the supplying ratio VIII of a V group raw material to a III group raw material is set to 1000-5000 and the growing rate thereof is 4 mhour or more.
10. The methodfor producing a nitride semiconductor luminescence device according to claim 6, wherein upon the growth of at least one of the p-type nitride semiconductor layers the supplying ratio VIII of a V group raw material to a III group raw material is set to 1000-5000 and the growing rate thereof is set to 4 mhour or more.
11. The method for producing a nitride semiconductor according to claim 5, wherein upon the growth of said p-type nitride semiconductor the supplying ratio VIII of a V group raw material to a III group raw material is set to 1000-5000 and the growing rate thereof is set to 4 mhour or more, thereby growing said p-type nitride semiconductor having a point defect concentration of 11019 cm3 or more.
12. The method for producing a nitride semiconductor luminescence device according to claim 6, wherein upon the growth of at least one of said p-type nitride semiconductor layers the supplying ratio VIII of a V group raw material to a III group raw material is set to 1000-5000 and the growing rate thereof is set to 4 mhour or more, thereby growing the layer to be a p-type nitride semiconductor having a point defect concentration of 11019 cm3 or more.
13. The method for producing a nitride semiconductor according to claim 3, wherein after the growth of said p-type semiconductor the grown semiconductor is subjected to an activating treatment by heating or radiating an electron beam.
14. The method for producing a nitride semiconductor according to claim 4, wherein after the growth of said p-type semiconductor the grown semiconductor is subjected to an activating treatment by heating or radiating an electron beam.
15. The method for producing a nitride semiconductor according to claim 5, wherein after the growth of said p-type semiconductor the grown semiconductor is subjected to an activating treatment by heating or radiating an electron beam.
16. The method for producing a nitride semiconductor according to claim 6, wherein after the growth of said p-type semiconductor the grown semiconductor is subjected to an activating treatment by heating or radiating an electron beam.
17. The method for producing a nitride semiconductor according to claim 7, wherein after the growth of said p-type semiconductor the grown semiconductor is subjected to an activating treatment by heating or radiating an electron beam.
18. The method for producing a nitride semiconductor according to claim 8, wherein after the growth of said p-type semiconductor the grown semiconductor is subjected to an activating treatment by heating or radiating an electron beam.
19. The method for producing a nitride semiconductor according to claim 9, wherein after the growth of said p-type semiconductor the grown semiconductor is subjected to an activating treatment by heating or radiating an electron beam.
20. The method for producing a nitride semiconductor according to claim 10, wherein after the growth of said p-type semiconductor the grown semiconductor is subjected to an activating treatment by heating or radiating an electron beam.
21. The method for producing a nitride semiconductor according to claim 11, wherein after the growth of said p-type semiconductor the grown semiconductor is subjected to an activating treatment by heating or radiating an electron beam.
22. The method for producing a nitride semiconductor according to claim 12, wherein after the growth of said p-type semiconductor the grown semiconductor is subjected to an activating treatment by heating or radiating an electron beam.
23. The nitride semiconductor luminescence device according to claim 2, wherein an active layer constituting said nitride semiconductor luminescence device, or said active layer and a semiconductor layer adjacent thereto are composed of a semiconductor layer of BpAlqGarInsN (0p1, 0q1, 0r1, 0s1, pqrs1) having a point defect concentration of 11019 cm3 or more.
24. The method for producing a nitride semiconductor luminescence device according to claim 6,
wherein a contact layer of said nitride semiconductor luminescence device, is grown by said p-type nitride semiconductor layer,
the supplying ratio VIII of a V group raw material to a III group raw material is set to more than 5000 upon the growth of an active layer constituting the nitride semiconductor luminescence device, or said active layer and a semiconductor layer adjacent thereto, and the relative ratio of the supplying ratio VIII upon the growth of said contact layer to the supplying ratio VIII upon the growth of said active layer, or said active layer and a semiconductor layer adjacent thereto is set to 0.5:1.