1. A memory, comprising:
a memory array, comprising a memory cell;
wherein the memory is adapted to program a first number of bits into the memory cell; and
wherein the memory is adapted to sense a second number of bits, different from the first number of bits, from the memory cell.
2. The memory of claim 1, wherein the first number of bits is equal to M bits and the second number of bits is equal to M+L bits.
3. The memory of claim 2, wherein M is greater than L.
4. The memory of claim 1, wherein the first number of bits is equal to M+N bits and the second number of bits is equal to M+L bits, wherein M is a number of data bits, N is a number of additional programming resolution bits, and L is a number of additional read resolution bits.
5. The memory of claim 4, wherein M+N is greater than L.
6. The memory of claim 1, wherein the first number of bits is greater than the second number of bits.
7. The memory of claim 1, wherein the second number of bits is greater than the first number of bits.
8. A readwrite circuit, comprising:
a multiplexer coupled to a plurality of data lines; and
storage elements configured to store a first number of bits to be programmed into a memory cell coupled to each of the plurality of data lines, and configured to store a second number of bits of data to be sensed from a memory cell coupled to one of the plurality of data lines, the first number of bits to be programmed being different than the second number of bits of data to be sensed.
9. The readwrite circuit of claim 8, further comprising:
a sense amplifier coupled to the storage elements and the multiplexer; and
a program control circuit coupled to the storage elements and the multiplexer;
wherein the multiplexer is configured to couple each of the plurality of data lines to the program control circuit during a programming operation and to couple one of the plurality of data lines to the sense amplifier during a sensing operation.
10. The readwrite circuit of claim 9, wherein the sense amplifier is configured to sense a Vt level of the memory cell.
11. The readwrite circuit of claim 8, wherein the first number of bits is M bits or M+N bits, and wherein the second number of bits is M+L bits.
12. A readwrite circuit, comprising:
a multiplexer coupled to a plurality of data lines; and
storage elements configured to store a first number of bits to be programmed into a memory cell coupled to each of the plurality of data lines, and configured to store a second number of bits of data to be sensed from a memory cell coupled to one of the plurality of data lines, the first number of bits to be programmed being different than the second number of bits of data to be sensed
a sense amplifier coupled to the storage elements and the multiplexer;
a program control circuit coupled to the storage elements and the multiplexer; and
a comparator coupled to the storage elements and the program control circuit.
13. The readwrite circuit of claim 12, wherein the multiplexer is configured to couple each of the plurality of data lines to the program control circuit during a programming operation and to couple one of the plurality of data lines to the sense amplifier during a sensing operation.
14. A memory, comprising:
a memory array organized in rows and columns; and
storage elements configured to store a number of bits of data to be programmed in each memory cell of a selected row;
wherein the memory is configured to selectively adjust a number of pages in a row without increasing a number of storage elements.
15. The memory of claim 14, wherein the memory is configured to adjust the number of bits of data to be programmed in each memory cell of the selected row up or down.
16. The memory of claim 14, wherein the memory is configured to select a maximum number of storage elements available per cell of a page for a selected sensing resolution.
17. The memory of claim 16, wherein the memory is configured to select the sensing resolution internally under the control of the memory.
18. The memory of claim 16, wherein the sensing resolution is selected externally.
19. The memory of claim 16, wherein the sensing resolution is selected externally by setting of a mode register or signal line of the memory.
20. The memory of claim 14, wherein the memory is configured to alter column decoding to select more or less pages in the row.
21. A non-volatile memory device, comprising:
a memory array;
readwrite circuitry coupled to the memory array;
wherein the readwrite circuitry is configured to receive an analog signal representative of M+N bits and to program a memory cell using the received analog signal;
wherein the readwrite circuitry is configured to sense an analog signal from the memory cell representative of M+L bits and to output the sensed analog signal from the non-volatile memory device; and
wherein N is not equal to L.
22. The non-volatile memory device of claim 21, further comprising a buffer coupled to receive the analog signal representative of M+L bits from the readwrite circuitry before the analog signal representative of M+L bits is output from the memory device.
23. The non-volatile memory device of claim 21, wherein the memory array is a NAND architecture memory array.
24. The non-volatile memory device of claim 21, wherein the non-volatile memory device is configured to process and generate the received and sensed analog signals representative of M bits of data stored in the memory cell.
25. The non-volatile memory device of claim 24, wherein the non-volatile memory device is configured to store the M bits of data using 2M+N threshold voltage ranges on the memory cell.
26. The non-volatile memory device of claim 24, wherein the memory cell is a multi-level cell and the non-volatile memory device is configured to program the multi-level cell directly to a target threshold voltage for a desired bit pattern.
27. A memory controller, comprising:
a digital signal processor;
an M+N bit digital to analog converter coupled to receive M bits of digital data in combination with the N bits of additional programming resolution from the digital signal processor, the digital to analog converter configured to output an analog signal;
an M+L bit analog to digital converter coupled to receive an analog signal and coupled to output an M+L bit digital signal to the digital signal processor; and
wherein N is not equal to L.
28. The memory controller of claim 27, wherein the digital signal processor is configured to retrieve M bits of data from the M+L bit digital signal.
29. The memory controller of claim 28, wherein the M+L bit analog to digital converter is configured to receive the analog signal from a memory cell of a memory device.
30. A non-volatile memory device, comprising:
a memory array;
an M+N bit digital to analog converter configured to receive, as a digital representation, M+N bits of program data for a memory cell of the memory array;
readwrite circuitry coupled to the memory array and coupled to receive an analog signal from the M+N bit digital to analog converter, wherein the readwrite circuitry is configured to program the memory cell using the received analog signal; and
an M+L bit analog to digital converter coupled to receive from the readwrite circuitry an analog signal representative of M+L bits read from the memory cell by the readwrite circuitry and to output a digital data signal representative of the M+L bits from the non-volatile memory device;
wherein N is not equal to L.
31. The non-volatile memory device of claim 30, further comprising a buffer coupled to receive the analog signal from the readwrite circuitry representative of M+L bits read from the memory cell and to output the analog signal representative of M+L bits read from the memory cell to the M+L bit analog to digital converter.
32. The non-volatile memory device of claim 30, wherein the readwrite circuitry is configured to sense threshold voltages of the memory cell corresponding to the M+L bits.
33. The non-volatile memory device of claim 32, wherein the analog signal representative of the M+L bits read from the memory cell comprises the sensed threshold voltages.
34. A memory controller, comprising:
a digital signal processor;
wherein the digital signal processor is configured to output a digital data signal of M+N bits of program data intended for programming a memory cell of a memory device;
wherein the digital signal processor is configured to receive a digital data signal of M+L bits read from the memory cell of the memory device and to retrieve from the received digital data signal M bits of data that were stored in the memory cell; and
wherein N is not equal to L.
35. A non-volatile memory device, comprising:
a memory array; and
sense amplifier and readwrite circuitry coupled to the memory array;
wherein the sense amplifier and readwrite circuitry is configured to receive M+N bits of digital program data and to program a memory cell of the memory array, in a program operation, with the M+N bits of digital program data;
wherein the sense amplifier and readwrite circuitry is configured to sense an M+L bit data value from the memory cell; and
wherein N is not equal to L.
36. The non-volatile memory device of claim 35, wherein the sense amplifier and readwrite circuitry is configured to sense the M+L bit data value from the memory cell by sensing a threshold voltage of the memory cell.
37. The non-volatile memory device of claim 36, wherein the non-volatile memory device is configured to match the threshold voltage of the memory cell to a digital representation of an M+L bit read resolution.
38. The non-volatile memory device of claim 37, wherein the non-volatile memory device is configured to match and sense the threshold voltage to the digital representation by any one of multi-pass reading, ramped word line voltage reading, and source-follower reading.
39. The non-volatile memory device of claim 37, further comprising a buffer coupled to the sense amplifier and readwrite circuitry, wherein the buffer is configured to receive the digital representation of the sensed threshold voltage from the sense amplifier and readwrite circuitry and buffer the digital representation of the sensed threshold voltage for output from the non-volatile memory device.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A monochromator system for selecting a small range of wavelengths in a polychromatic beam of electromagnetic radiation, which monochromator system functionally sequentially comprises within in a substantially enclosed space containing enclosing means having vertical, longitudinal and lateral dimensions:
source means for providing of a beam of electromagnetic radiation;
first slit providing means;
first mirror;
first stage comprising a plurality of gratings, each of which can be rotated into a functional position;
second mirror providing element;
second slit providing means;
third mirror;
second stage comprising a plurality of gratings, each of which can be rotated into a functional position;
fourth mirror;
order sorting filter means;
pin hole providing means;
and further comprises beam chopper means after said source means for providing of a beam of electromagnetic radiation;
said source means for providing a beam of electromagnetic radiation comprising both Xenon and Deuterium Lamps and source selecting mirror and motion imparting means for selecting therebetween;
said second mirror being laterally present between said first mirror and said second stage which comprises a plurality of gratings, and said third mirror being laterally positioned between said first stage which comprises a plurality of gratings and said fourth mirror,
said first mirror and second mirror and said second stage comprising a plurality of gratings as a group being longitudinally removed from said first stage which comprises a plurality of gratings and said third mirror and said fourth mirror;
there being first electromagnetic radiation blocking baffle means positioned between said source means for providing of a beam of electromagnetic radiation and said first stage comprising a plurality of gratings;
there being second electromagnetic radiation blocking baffle means positioned between said second mirror providing element and said second stage comprising a plurality of gratings;
there being third electromagnetic radiation blocking baffle means positioned between said third mirror providing element and said first stage comprising a plurality of gratings;
there being fourth electromagnetic radiation blocking baffle means positioned between said first and second mirrors;
there being fifth electromagnetic radiation blocking baffle means positioned between said third and fourth mirrors;
there being sixth electromagnetic radiation blocking baffle means positioned between said second stage comprising a plurality of gratings and said pin hole providing means;
such that in use a beam of electromagnetic radiation provided by said source means for providing of a beam of electromagnetic radiation is:
caused to pass through said first slit;
reflect from said first mirror;
interact with one of said plurality of gratings on said first stage which is rotated into a functional position;
reflect from said second mirror;
pass through said second slit;
reflect from said third mirror;
interact with one of said plurality of gratings on said second stage which is rotated into a functional position;
reflect from said fourth mirror, proceed through order sorting filtering means;
said beam of electromagnetic radiation further being chopped by said chopping means;
with monochromator selected wavelengths being caused to exit through said pinhole;
the improvements being that:
said Deuterium lamp is mounted on a stage which enables three dimensional X-Y-Z positioning motion controlled from outside said enclosing means;
said beam chopping means, source selecting mirror and motion imparting means, first slit providing means, first stage comprising a plurality of gratings and associated rotation imparting means, second slit providing means, second stage comprising a plurality of gratings and associated rotation imparting means, all have electrical plug-insocket means;
and a mother printed circuit board which provides traces which in use carry electrical energy to said source selecting mirror motion imparting means, said first slit providing means, said first stage comprising a plurality of gratings and associated rotation imparting means, said second slit providing means, said second stage comprising a plurality of gratings and associated rotation imparting means; conductive traces on said mother printed circuit board providing access at a socket means which is extended outside said substantially enclosed space defining enclosing means.
2. A monochromator system as in claim 1, in which electronic circuitry for controlling said rotation imparting means which when provided an electrical signal causes rotation of said associate first or second stage is present on a printed circuit board which plugs into said socket means of said mother printed circuit board which is extended outside said substantially enclosed space defining enclosing means via a sealing means.
3. A monochromator system as in claim 1, in which the first and second slit providing means each comprise a slit which is effected by a bilateral slit assembly which comprises two slide assemblies, each slide assembly comprising an elongated rail element and a slide element such that said slide element can slide with respect to said elongated rail element in the direction of elongation thereof, wherein said two slide assemblies are oriented; by affixing said elongated rail elements to a frame, such that slide element’s loci of motion converge toward a lover extent of said frame, as said bilateral slit assembly is viewed in vertically oriented frontal elevation, thereby forming an upward opening EVA shape therebetween, the lower ends of each slide element comprising means for allowing horizontal motion therebetween when said slide element lower ends are caused to simultaneously move vertically during use, which bilateral slit assembly further comprises two knife-blade elements, one affixed to each slide element such that a horizontal slit width between vertically oriented facing edges of said two knife-blade elements can be controlled between essentially zero (0) distance and some larger distance by a simultaneous vertically oriented motion of the lower ends of said slide elements during use,
the purpose of controlling said horizontal slit width between vertically oriented facing edges of said two knife-blade elements being to control the intensity and frequency bandwidth of a light beam which can pass therebetween, as is required by spectrometers, monochromators, and spectrographs and the like.
4. A monochromator system as in claim 1, in which the first and second slit providing means each comprise a slit which is effected by a bilateral slit assembly which comprises two knife-blade elements, affixed to slide elements such that a horizontal slit width between vertically oriented facing edges of said two knife-blade elements can be controlled between essentially zero (0) distance and some larger distance by horizontal oriented motion of one or the other thereof during use, said motion translation being via motion of a wedge which contacts two sequences of balls, the first in each sequence of balls contacting the wedge and the last ball in one sequence contacting one of the two knife blades, and the last ball in the other sequence contacting the other of the two knife blades, such that causing the wedge to move causes the first ball in each sequence of balls to move and in turn the last ball in each sequence effects motion of the knife blade it contacts, said first ball in one said sequence contacting one side of said wedge, and said first ball in said second sequence contacting the other said of said wedge;
the purpose of controlling said horizontal slit width between vertically oriented facing edges of said two knife-blade elements being to control the intensity and frequency bandwidth of a light beam which can pass therebetween, as is required by spectrometers, monochromators, and spectrographs and the like.
5. A monochromator system for selecting a small range of wavelengths in a beam of electromagnetic radiation, which monochromator system functionally sequentially comprises within in a substantially enclosed space containing enclosing means having longitudinal and lateral dimensions:
Deuterium source means for providing of a beam of electromagnetic radiation;
first slit providing means;
first mirror;
first stage comprising a plurality of gratings, each of which can be rotated into a functional position;
second mirror providing element;
second slit providing means;
third mirror;
second stage comprising a plurality of gratings, each of which can be rotated into a functional position;
fourth mirror;
order sorting filter means;
pin hole providing means;
and further comprises beam chopper means after said source means for providing of a beam of electromagnetic radiation;
such that in use a beam of electromagnetic radiation provided by said Deuterium source means for providing of a beam of electromagnetic radiation is:
caused to pass through said first slit;
reflect from said first mirror;
interact with one of said plurality of gratings on said first stage which is rotated into a functional position;
reflect from said second mirror;
pass through said second slit;
reflect from said third mirror;
interact with one of said plurality of gratings on said second stage which is rotated into a functional position;
reflect from said fourth mirror, proceed through order sorting filtering means;
said beam of electromagnetic radiation further being chopped by said chopping means;
with monochromator selected wavelengths being caused to exit through said pinhole;
the improvements being that:
said Deuterium source means is mounted on a stage which enables three dimensional X-Y-Z positioning motion controlled from outside said enclosing means via means which project through said enclosing means, the control for each of the \u201cX\u201d, \u201cY\u201d and \u201cZ\u201d direction motion providing laterally directed motion which, when exerted in a positive direction respectively:
directly moves said stage laterally in a positive \u201cX\u201d direction;
provides lateral motion to the first of a sequential multiplicity of balls present in a channel, which channel is shaped to direct the notion of the last of said balls longitudinally in a positive \u201cY\u201d direction;
provides lateral motion to the first of a sequential multiplicity of balls present in a channel, which channel is shaped to direct the motion of the last of said balls vertically in a positive \u201cZ\u201d direction;
said stage having spring means functionally associated therewith which resist said positive direction lateral, longitudinal and vertical motions, such that when said means which project through said enclosing means that control the \u201cX\u201d, \u201cY\u201d and \u201cZ\u201d direction motions are caused to provide laterally directed motion exerted in a negative direction, respectively:
causes the stage to move laterally in a negative \u201cX\u201d direction;
causes the stage to move laterally in a negative \u201cY\u201d direction;
causes the stage to move laterally in a negative \u201cZ\u201d direction.
6. A method of adjusting the position of a deuterium lamp in a monochromator system to optimize monochromator system output, comprising the steps of:
a) providing a monochromator system for selecting a small range of wavelengths In a beam of electromagnetic radiation, which monochromator system functionally sequentially comprises within in a substantially enclosed space containing enclosing means having vertical, longitudinal and lateral dimensions, said monochromator system comprising:
deuterium source means for providing of a beam of electromagnetic radiation;
first slit providing means;
first mirror;
first stage comprising a plurality of gratings, each of which can be rotated into a functional position;
second mirror providing element;
second slit providing means;
third mirror;
second stage comprising a plurality of gratings, each of which can be rotated into a functional position;
fourth mirror;
order sorting filter means;
pin hole providing means;
and further comprises beam chopper means after said source means for providing of a beam of electromagnetic radiation;
such that in use a beam of electromagnetic radiation provided by said Deuterium source means for providing of a beam of electromagnetic radiation is:
caused to pass through said first slit;
reflect from said first mirror;
interact with one of said plurality of gratings on said first stage which is rotated into a functional position;
reflect from said second mirror;
pass through said second slit;
reflect from said third mirror;
interact with one of said plurality of gratings on said second stage which is rotated into a functional position;
reflect from said fourth mirror, proceed through order sorting filtering means;
said beam of electromagnetic radiation further being chopped by said chopping means;
with monochromator selected wavelengths being caused to exit through said pinhole;
the improvement being that:
said Deuterium source means is mounted on a stage which enables three dimensional X-Y-Z positioning motion controlled from outside said enclosing means via means which project through said enclosing means, the control for each of the \u201cX\u201d, \u201cY\u201d and \u201cZ\u201d direction motion providing laterally directed motion which, when exerted in a positive direction respectively:
directly moves said stage laterally in a positive \u201cX\u201d direction;
provides lateral motion to the first of a sequential multiplicity of balls present in a channel, which channel is shaped to direct the motion of the last of said balls longitudinally in a positive \u201cY\u201d direction;
provides lateral motion to the first of a sequential multiplicity of balls present in a channel, which channel is shaped to direct the motion of the last of said balls vertically in a positive \u201cZ\u201d direction;
said stage having spring means functionally associated therewith which resist said positive direction lateral, longitudinal and vertical motions, such that when said means which project through said enclosing means that control the \u201cX\u201d, \u201cY\u201d and \u201cZ\u201d direction motions are caused to provide laterally directed motion exerted in a negative direction, respectively:
causes the stage to move laterally in a negative lateral \u201cX\u201d direction;
causes the stage to move laterally in a negative longitudinal \u201cY\u201d direction;
causes the stage to move laterally in a negative vertical \u201cZ\u201d direction.
b) from outside said substantially enclosed space containing enclosing means operating said mirror means for selecting between said Xenon and Deuterium lamps such that the Deuterium lamp is selected and is caused to provide electromagnetic radiation to said first slit means;
c) from outside said substantially enclosed space containing enclosing means adjusting the location of said stage which enables X-Y-Z position adjustment by causing at least one selection from the group consisting of said X, Y and Z position adjustment means, while monitoring electromagnetic radiation output from said pin hole;
to the end that said electromagnetic radiation output from said pin hole is optimized.
7. An polarimeter or ellipsometer system comprising a
monochromator system, said polarimeter or ellipsometer system comprising;
a source system comprising:
a source of electromagnetic radiation: and
a polarization state modifier system:
a stage for supporting a sample system; and
a plurality of polarization state detector systems, each of which comprises:
a polarization state analyzer: and
a detector system;
such that a beam of electromagnetic radiation is produced by said source of electromagnetic radiation and caused to pass through said polarization state modifier system, interact with a sample system placed on said stage for supporting a sample system, pass through a polarization state analyzer and enter a detector system in the pathway thereof, the mounting of said plurality of polarization state detector systems being in a manner which allows easily, sequentially, placing a first and then a second thereof so as to receive said beam of electromagnetic radiation, without required removal of any of said plurality of polarization state detector systems from said ellipsometer system;
which source of electromagnetic radiation comprises a monochromator system for selecting a small range of wavelengths in a polychromatic beam of electromagnetic radiation, which monochromator system functionally sequentially comprises within in a substantially enclosed space containing enclosing means having vertical, longitudinal and lateral dimensions:
said source of electromagnetic radiation;
first slit providing means;
first mirror;
first stage comprising a plurality of gratings, each of which can be rotated into a functional position;
second mirror providing element;
second slit providing means;
third mirror;
second stage comprising a plurality of gratings, each of which can be rotated into a functional position;
fourth mirror;
order sorting filter leans;
pin hole providing means;
and further comprises beam chopper means after said source means for providing of a beam of electromagnetic radiation;
said source means for providing of a beam of electromagnetic radiation comprising both Xenon and Deuterium Lamps and source
selecting mirror and motion imparting means for selecting therebetween;
said second mirror being laterally present between said first mirror and said second stage which comprises a plurality of gratings, and said third mirror being laterally positioned between said first stage which comprises a plurality of gratings and said fourth mirror,
said first mirror and second mirror and said second stage comprising a plurality of gratings as a group being longitudinally removed from said first stage which comprises a plurality of gratings and said third mirror and said fourth mirror;
there being first electromagnetic radiation blocking baffle means positioned between said source means for providing of a beam of electromagnetic radiation and said first stage comprising a plurality of gratings;
there being second electromagnetic radiation blocking baffle means positioned between said second mirror providing element and said second stage comprising a plurality of gratings;
there being third electromagnetic radiation blocking baffle means positioned between said third mirror providing element and said first stage comprising a plurality of gratings;
there being fourth electromagnetic radiation blocking baffle means positioned between said first and second mirrors;
there being fifth electromagnetic radiation blocking baffle means positioned between said third and fourth mirrors;
there being sixth electromagnetic radiation blocking baffle means positioned between said second stage comprising a plurality of gratings and said pin hole providing means;
such that in use a beam of electromagnetic radiation provided by said source means for providing of a beam of electromagnetic radiation is:
caused to pass through said first slit;
reflect from said first mirror;
interact with one of said plurality of gratings on said first stage which is rotated into a functional position* reflect from said second mirror;
pass through said second slit;
reflect from said third mirror;
interact with one of said plurality of gratings on said second stage, which is rotated into a functional position;
reflect from said fourth mirror, proceed through order sorting filtering means;
said beam of electromagnetic radiation further being chopped by said chopping means;
with monochromator selected wavelengths being caused to exit through said pinhole;
said monochromator being characterized by at least one selection from the group consisting of:
said Deuterium lamp is mounted on a stage which enables three dimensional X-Y-Z positioning motion controlled from outside said enclosing means;
said beam chopping means, source selecting mirror and motion imparting means, first slit providing means, first stage comprising a plurality of gratings and associated rotation imparting means, second slit providing means, second stage comprising a plurality of gratings and associated rotation imparting means, all have electrical plug-insocket means;
and a mother printed circuit board which provides traces which in use carry electrical energy to said source selecting mirror motion imparting means, said first slit providing means, said first stage comprising a plurality of gratings and associated rotation imparting means, said second slit providing means, said second stage comprising a plurality of gratings and associated rotation imparting means; conductive traces on said mother printed circuit board providing access at a socket means which is extended outside said substantially enclosed space defining enclosing means.