1. An apparatus comprising:
a) a shell having a shell opening, the shell defining a processing environment;
b) a shell flange covering the shell opening, the shell flange having an opening to the processing environment;
c) a rack for supporting work pieces, the rack having at least one plate, and the rack being sized to be received through the opening and within the processing environment;
d) a plate fluid conduit adapted to receive heating andor cooling fluid, the plate fluid conduit being in contact with the at least one plate; and
e) a vacuum flange configured to form a tight seal with the shell flange when the rack is received in the processing environment.
2. The apparatus of claim 1, wherein the rack has at least two plates, the plates being joined by pillars.
3. The apparatus of claim 2, wherein each plate is in contact with a plate fluid conduit.
4. The apparatus of claim 2, wherein the pillars are wafer support pillars, the wafer support pillars having slots for receiving work pieces.
5. The apparatus of claim 1, wherein a manifold is connected to the at least one plate.
6. The apparatus of claim 5, wherein the manifold is configured to circulate fluid though the plate fluid conduit that is in contact with the at least one plate.
7. The apparatus of claim 1, further comprising back fill gas piping configured to introduce gas into the processing environment.
8. The apparatus of claim 1, further comprising back fill gas piping configured to circulate gas through the processing environment.
9. The apparatus of claim 1, further comprising at least one external heater disposed on the outside of the shell for heating the processing environment.
10. The apparatus of claim 1, further comprising a heater in contact with the at least one plate.
11. The apparatus of any of claims 1-8, further comprising a vacuum pump attached to the shell for creating a vacuum within the processing environment.
12. The apparatus of any of claims 1-8, wherein the shell flange is in contact with a shell flange fluid loop which has an inlet and an outlet.
13. The apparatus of any of claims 1-8, further comprising at least one external heater disposed on the outside of the shell for heating the processing environment.
14. The apparatus of claim 1, further comprising an external magnet positioned to induce a magnetic field in the processing environment.
15. The apparatus of claim 1, wherein the work pieces are generally planar and further comprising an external magnet positioned to induce a magnetic field along the plane of the work pieces held in the rack.
16. The apparatus of claim 1, further comprising:
a) an external heater disposed outside of the shell for heating the processing environment; and
b) a vacuum pump attached to the shell for creating a vacuum in the processing environment; wherein
c) the rack has at least a first plate and a second plate, the plates being joined by support pillars attached to the first and second plates, the support pillars having slots for receiving and holding work pieces, and the rack being sized to be received through the shell flange opening and into the processing environment of the shell;
d) the plate fluid conduit is in contact with the first plate and a second plate fluid conduit is in contact with the second plate; and
e) the vacuum flange has a manifold connected to and passing through the vacuum flange, the manifold configured to circulate fluid through the plate fluid conduits.
17. The apparatus of any one of claims 5-10, or 16, wherein any combination of the rack, manifold, vacuum flange, shell flange, external heater andor the shell is made of non-magnetic material.
18. The apparatus of claim 14, wherein the shell is made of quartz.
19. The apparatus of claim 14, wherein the shell is capable of maintaining a vacuum of at least 10\u22127 Torr.
20. The apparatus of claim 14, further comprising back fill gas piping configured to introduce gas into the processing environment.
21. The apparatus of claim 14, further comprising back fill gas piping configured to circulate gas through the processing environment.
22. The apparatus of claim 14, further comprising an external magnet positioned to induce a magnetic field in the processing environment.
23. The apparatus of claim 14, wherein the work pieces are generally planar and further comprising an external magnet positioned to induce a magnetic field along the plane of the work pieces held in the rack.
24. The apparatus of either claim 22 or 23, wherein the magnet is capable of inducing a magnetic field of at least 0.25 Tesla in the work pieces held in the rack.
25. The apparatus of any one of claims 14-15, 22 or 23, wherein the shell flange and the vacuum flange comprise a rotatable vacuum joint for rotating the rack to allow additional magnetic orientations to be imparted to the work pieces without compromising the tight seal.
26. The apparatus of any one of claim 1 or 16, further comprising means for removing the rack from the processing environment and moving the rack to a location where loading and unloading of the work pieces can be accomplished.
27. A process comprising:
a) loading work pieces onto a rack, the rack comprising at least one plate and a plate fluid conduit in contact with the at least one plate;
b) placing the rack into a shell, the shell defining a processing environment, wherein one end of the shell is covered by a shell flange secured to the shell, the shell flange having an opening for receiving the rack into the processing environment, and wherein the other end of the shell is attached to a vacuum pump;
c) sealing the processing environment with a seal flange which is configured to form a tight seal with the shell flange when the rack is placed in the processing environment, the seal flange further having a manifold passing through it which is connected to the plate fluid conduit;
d) creating a vacuum in the processing environment with the vacuum pump;
e) increasing the temperature of the work pieces;
f) maintaining the vacuum and temperature until the work pieces are treated;
g) decreasing the temperature of the work pieces by passing a cooling fluid through the plate fluid conduit and by cooling the exterior of the shell;
h) decreasing the vacuum to gradually reintroduce atmosphere within the processing environment;
i) removing the rack from the processing environment; and
j) removing the work pieces from the rack.
28. A process comprising:
a) loading work pieces onto a rack, the rack comprising at least one plate and a plate fluid conduit in contact with the at least one plate;
b) placing the rack into a shell, the shell defining a processing environment, wherein one end of the shell is covered by a shell flange secured to the shell, the shell flange having an opening for receiving the rack into the processing environment, and wherein the other end of the shell is attached to a vacuum pump;
c) sealing the processing environment with a seal flange which is configured to form a tight seal with the shell flange when the rack is placed in the processing environment, the seal flange further having a manifold passing through it which is connected to the plate fluid conduit;
d) creating a vacuum in the processing environment with the vacuum pump;
e) increasing the temperature of the work pieces;
f) increasing the magnetic field in the processing environment to a desired field strength with an external magnet disposed outside of the shell;
g) maintaining the vacuum, temperature, and magnetic field until the work pieces assume a desired magnetic orientation;
h) decreasing the temperature of the work pieces by passing a cooling fluid through the plate fluid conduit and by cooling the exterior of the shell;
i) decreasing and removing the magnetic field;
j) decreasing the vacuum to gradually reintroduce atmosphere within the processing environment;
k) removing the rack from the processing environment; and
l) removing the work pieces from the rack.
29. A process comprising:
a) loading work pieces onto a rack, the rack comprising at least one plate and a plate fluid conduit in contact with the at least one plate;
b) placing the rack into a shell, the interior of the shell defining a processing environment, wherein one end of the shell is covered by a shell flange secured to the shell, the shell flange having an opening for receiving the rack into the processing environment, and wherein the other end of the shell is attached to a vacuum pump;
c) sealing the processing environment with a seal flange which is configured to form a rotatable vacuum joint with the shell flange when the rack is placed in the processing environment, the seal flange further having a manifold passing through it which is connected to the plate fluid conduit;
d) creating a vacuum in the processing environment with the vacuum pump;
e) increasing the temperature of the work pieces;
f) increasing the magnetic field in the processing environment to a desired field strength with an external magnet disposed outside of the shell;
g) maintaining the vacuum, temperature, and magnetic field until the work pieces assume a desired magnetic orientation;
h) decreasing the temperature of the work pieces by passing a cooling fluid through the plate fluid conduit;
i) decreasing and removing the magnetic field;
j) rotating the rack from a first position to a second position;
k) increasing the temperature of the work pieces;
l) increasing the magnetic field in the processing environment to a desired field strength with an external magnet disposed outside of the shell;
m) maintaining the vacuum, temperature, and magnetic field until the work pieces assumes a desired magnetic orientation;
n) decreasing the temperature of the work pieces by passing a cooling fluid through the plate fluid conduit;
o) decreasing and removing the magnetic field;
p) decreasing the vacuum to gradually reintroduce atmosphere within the processing environment;
q) removing the rack from the processing environment; and
r) removing the work pieces from the rack.
30. The process of any one of claims 27, 28, or 29, wherein the temperature of the work pieces is increased by passing a heating fluid through the plate fluid conduit.
31. The process of any one of claims 27, 28, or 29, wherein the temperature of the work pieces is increased by use of one or more external heaters disposed outside of the shell.
32. The process of any one of claims 27, 28, or 29, wherein the temperature of the work pieces is increased by use of one or more external heaters disposed outside of the shell and by passing a heating fluid through the plate fluid conduit.
33. The process of any one of claims 27, 28, or 29, wherein the vacuum is reduced through the addition of gas through back fill gas piping.
34. The process of any one of claims 27, 28, or 29, wherein the work pieces are generally planar and the external magnet is positioned to induce a magnetic field along the plane of the work pieces held in the rack.
35. The process of any one of claims 27, 28, or 29, wherein the rack is removed from the processing environment with a gantry capable of moving the rack to a position suitable for loading and unloading.
36. The process of any one of claims 27 or 28, further comprising the step of rotating the work pieces from a first position to at least a second position to provide at least a second magnetic orientation to the work pieces.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device, comprising:
a first substrate;
a first conductive pillar formed over the first substrate;
a second conductive pillar formed over the first substrate vertically offset with respect to the first conductive pillar;
a first interconnect structure formed over the first conductive pillar; and
a second interconnect structure formed over the second conductive pillar with the second interconnect structure overlapping the first interconnect structure.
2. The semiconductor device of claim 1, wherein the first interconnect structure and second interconnect structure includes a bump.
3. The semiconductor device of claim 1, further including an under bump metallization layer formed over the first conductive pillar and second conductive pillar.
4. The semiconductor device of claim 1, further including:
a second substrate; and
a plurality of interconnect sites disposed over the second substrate.
5. The semiconductor device of claim 4, wherein the interconnect sites are bond on trace interconnect sites.
6. The semiconductor device of claim 4, wherein the first substrate is disposed over the second substrate with the first interconnect structure and second interconnect structure bonded to the interconnect sites.
7. A semiconductor device, comprising:
a first substrate;
a plurality of conductive pillars formed over the first substrate with alternating ones of the conductive pillars vertically offset with respect to intermediate ones of the conductive pillars; and
a plurality of bumps formed over the conductive pillars with the bumps formed over adjacent ones of the conductive pillars overlapping.
8. The semiconductor device of claim 7, further including an under bump metallization layer formed over the conductive pillars.
9. The semiconductor device of claim 7, further including:
a second substrate;
a first interconnect site disposed within a first surface of the second substrate; and
a second interconnect site disposed over the first surface of the second substrate vertically offset with respect to the first interconnect site.
10. The semiconductor device of claim 9, wherein the first interconnect site and second interconnect site are bond on trace interconnect sites.
11. The semiconductor device of claim 9, wherein the first substrate is disposed over the second substrate with the bumps bonded to the first interconnect site and second interconnect site.
12. The semiconductor device of claim 9, further including:
a third interconnect site disposed within a second surface of the second substrate opposite the first surface of the second substrate; and
a fourth interconnect site disposed over the second surface of the second substrate vertically offset with respect to the third interconnect site.
13. The semiconductor device of claim 12, further including a third substrate disposed over the second surface of the second substrate and bonded to the third interconnect site and fourth interconnect site.
14. A semiconductor device, comprising:
a first substrate;
a plurality of conductive pillars formed over the first substrate; and
a bump material formed over the conductive pillars with adjacent bump material separate and overlapping.
15. The semiconductor device of claim 14, wherein alternating ones of the conductive pillars are vertically offset with respect to intermediate ones of the conductive pillars.
16. The semiconductor device of claim 14, further including:
a second substrate; and
a plurality of interconnect sites disposed over a first surface of the second substrate.
17. The semiconductor device of claim 16, wherein the interconnect sites are bond on trace interconnect sites.
18. The semiconductor device of claim 16, wherein the first substrate is disposed over the second substrate with the bump material bonded to the interconnect sites.
19. The semiconductor device of claim 16, further including a plurality of bumps formed over a second surface of the second substrate opposite the first surface of the second substrate.
20. A semiconductor device, comprising:
a first substrate;
a plurality of conductive pillars formed over the first substrate; and
a plurality of interconnect structures formed over the conductive pillars with adjacent interconnect structures overlapping.
21. The semiconductor device of claim 20, wherein alternating ones of the conductive pillars are vertically offset with respect to intermediate ones of the conductive pillars.
22. The semiconductor device of claim 20, wherein the interconnect structures includes a bump.
23. The semiconductor device of claim 20, further including:
a second substrate; and
a plurality of interconnect sites disposed over the second substrate.
24. The semiconductor device of claim 23, wherein the first substrate is disposed over the second substrate with the interconnect structures bonded to the interconnect sites.
25. The semiconductor device of claim 20, further including a bond wire formed over the first substrate.