1. An insulated container for heat-insulation storage of a liquid, comprising:
an inner container formed of resin and equipped with a liquid flow inletoutlet portion;
an interior member and an exterior member accommodating the inner container and forming a gas barrier layer; and
a flange member fitted onto the flow inletoutlet portion,
wherein a heat insulation space in which a heat insulating material is sealed and which is reduced in pressure is formed between the interior member and the exterior member, and
wherein the flange member has a lower flange surface bonded to the interior member and an upper flange surface bonded to the exterior member.
2. An insulated container according to claim 1, wherein the interior member is formed of a laminate film having an adhesive layer formed on a surface thereof, and wherein the adhesive layer has an adhesive layer portion formed on a portion opposed to the inner container, and an adhesive layer portion formed on a portion to be bonded to the lower flange surface of the flange member.
3. An insulated container according to claim 2, wherein a direction changing portion surrounded by an adhesive portion where adhesive layers are opposed to each other is formed at a portion of the interior member adjacent to the flow inletoutlet portion.
4. An insulated container according to claim 1, wherein a gas barrier layer is formed on a surface of the flange member.
5. An insulated container according to claim 2, wherein a gas barrier layer is formed on a surface of the flange member.
6. An insulated container according to claim 3, wherein a gas barrier layer is formed on a surface of the flange member.
7. An insulated container according to claim 1, wherein a heat insulating material exists between the flow inletoutlet portion and the flange member.
8. An insulated container according to claim 2, wherein a heat insulating material exists between the flow inletoutlet portion and the flange member.
9. An insulated container according to claim 3, wherein a heat insulating material exists between the flow inletoutlet portion and the flange member.
10. An insulated container according to claim 4, wherein a heat insulating material exists between the flow inletoutlet portion and the flange member.
11. A method of manufacturing an insulated container for heat-insulation storage of a liquid, comprising:
covering a resin inner container equipped with a liquid flow inletoutlet portion with an interior member to which a lower flange surface of a flange member is bonded, the flange member being fitted onto the flow inletoutlet portion through a flow inletoutlet portion through-hole;
wrapping a heat insulating material around the inner container covered with the interior member; and
passing the flow inletoutlet portion of the inner container around which the heat insulating material is wrapped through an exterior member for vacuum-sealing the heat insulating material to bond the exterior member and an upper flange surface of the flange member to each other, and covering the inner container around which the heat insulating material is wrapped with the exterior member.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A plasma processing apparatus comprising:
a processing chamber having a dielectric window;
a substrate holding unit configured to hold thereon a processing target substrate within the processing chamber;
a processing gas supply unit configured to supply a processing gas into the processing chamber to perform a plasma process on the substrate;
a RF antenna, provided outside the dielectric window to generate plasma of the processing gas within the processing chamber by inductive coupling, having a plurality of coil segments that are arranged along a loop having a predetermined shape and a predetermined size while electrically connected to each other in parallel;
a high frequency power supply unit configured to supply a high frequency power having a frequency for generating a high frequency electric discharge of the processing gas;
at least one floating coil that is in an electrically floating state and provided outside the processing chamber to be coupled to the RF antenna by an electromagnetic induction; and
a capacitor provided in a loop of the at least one floating coil,
wherein an angular frequency on a radius of the at least one floating coil is denoted by \u03c9, a mutual inductance between the RF antenna and the at least one floating coil is denoted by M, an antenna current flowing in the RF antenna is denoted by IRF, a self-inductance of the at least one floating coil is denoted by L, and an electrostatic capacitance of the capacitor is denoted by C, and an induced current IIND flowing in the at least one floating coil is expressed by an approximation equation:
IIND\u2248\u2212M\u03c9IRF(L\u03c91C\u03c9), and
the at least one floating coil and the RF antenna are arranged on the same plane.
2. The plasma processing apparatus of claim 1, wherein the plurality of coil segments are extended along at least one round of the loop or along the most of the at least one round of the loop of the RF antenna as a whole.
3. The plasma processing apparatus of claim 1,
wherein a high frequency input terminal of one coil segment of the plurality of coil segments is adjacent to a high frequency output terminal of another coil segment thereof with a gap therebetween, and
a high frequency output terminal of said one coil segment is adjacent to a high frequency input terminal of said another coil segment with a gap therebetween.
4. The plasma processing apparatus of claim 3, wherein all the gaps are formed in a circumferential direction of the loop of the RF antenna.
5. The plasma processing apparatus of claim 3, wherein at least one of the gaps is formed in a direction perpendicular to a circumferential direction of the loop of the RF antenna.
6. The plasma processing apparatus of claim 1, wherein the plurality of coil segments are extended along at least one round of the loop of the RF antenna as a whole.
7. The plasma processing apparatus of claim 1, wherein a length of each of the plurality of coil segments is shorter than about \xbc of a wavelength of the high frequency power.
8. The plasma processing apparatus of claim 1, wherein the plurality of coil segments have substantially the same self-inductance.
9. The plasma processing apparatus of claim 1, wherein directions of electric currents flowing in the plurality of coil segments are same along the loop of the RF antenna.
10. The plasma processing apparatus of claim 9, wherein a direction of an electric current flowing in the at least one floating coil is the same as a direction of an electric current flowing in the RF antenna in the circumferential direction.
11. The plasma processing apparatus of claim 10, wherein an electrostatic capacitance of the capacitor in the at least one floating coil is smaller than an electrostatic capacitance obtained when a series resonance occurs in the at least one floating coil.
12. The plasma processing apparatus of claim 10, wherein the at least one floating coil includes a reactance having a negative value.
13. The plasma processing apparatus of claim 9, wherein a direction of an electric current flowing in the at least one floating coil is opposite to a direction of an electric current flowing in the RF antenna in a circumferential direction.
14. The plasma processing apparatus of claim 13, wherein an electrostatic capacitance of the capacitor in the at least one floating coil is greater than an electrostatic capacitance obtained when a series resonance occurs in the at least one floating coil.
15. The plasma processing apparatus of claim 13, wherein the at least one floating coil includes a reactance having a positive value.
16. The plasma processing apparatus of claim 1, wherein magnitudes of electric currents flowing in the plurality of coil segments are substantially same.
17. The plasma processing apparatus of claim 1, wherein the loop of the RF antenna is parallel to the dielectric window.
18. The plasma processing apparatus of claim 1, wherein the loop of the RF antenna is coaxial to the substrate held on the substrate holding unit.
19. The plasma processing apparatus of claim 1, wherein the at least one floating coil is arranged to be coaxial to the RF antenna.
20. The plasma processing apparatus of claim 1, wherein the at least one floating coil is electromagnetically coupled to each of the plurality of coil segments with the same mutual inductance.
21. The plasma processing apparatus of claim 1, wherein the at least one floating coil is provided inside or outside the RF antenna in a radial direction.
22. The plasma processing apparatus of claim 1, wherein a loop of the at least one floating coil has a similar shape to the loop of the RF antenna.
23. The plasma processing apparatus of claim 22, wherein the loop of the at least one floating coil has a diameter of about \u2153 to about 3 times a diameter of the loop of the RF antenna.
24. The plasma processing apparatus of claim 1, wherein the capacitor in the at least one floating coil is a variable capacitor, and a variable range of an electrostatic capacitance of the variable capacitor has a value smaller than a value obtained when a series resonance occurs in the at least one floating coil.
25. The plasma processing apparatus of claim 1, wherein the capacitor in the at least one floating coil is a variable capacitor, and a variable range of an electrostatic capacitance of the variable capacitor has values smaller and greater than a value obtained when a series resonance occurs in the at least one floating coil.
26. The plasma processing apparatus of claim 1, wherein the capacitor in the at least one floating coil is a variable capacitor, and a variable range of an electrostatic capacitance of the variable capacitor has a value greater than a value obtained when a series resonance occurs in the at least one floating coil.
27. The plasma processing apparatus of claim 1, wherein the at least one floating coil is plural in number, and the floating coils are arranged to be coaxial to one another.