1-14. (canceled)
15. A turbine disc for a turbine, comprising
a first protrusion and a second protrusion,
wherein the first protrusion and the second protrusion are formed in such a way that a balancing weight is coupleable between the first protrusion and the second protrusion, and
wherein the first protrusion comprises a sealing section that is capable of sealing a fluid passage between the turbine disc and a further turbine part of the turbine.
16. The turbine disc of claim 15, further comprising
a first surface and a second surface,
wherein the first protrusion and the second protrusion are formed on at least one of the first surface or second surface.
17. The turbine disc of claim 16,
wherein the turbine disc is coupleable to the turbine in such a way that the first surface and the second surface are opposed surfaces in an axial direction of a shaft of the turbine.
18. The turbine disc of claim 17,
wherein the turbine disc is coupleable to the turbine in such a way that the first surface is orientated upstream with respect to a fluid flow of the turbine and the second surface is orientated downstream with respect to the fluid flow.
19. The turbine disc of claim 15,
wherein the sealing section comprises a single seal lip.
20. The turbine disc of claim 15,
wherein the sealing section comprises a labyrinth seal.
21. The turbine disc of claim 15,
wherein the first protrusion and the second protrusion are formed andor arranged in such a way that a recess between the first protrusion and the second protrusion is formed, and
wherein the recess is formed in such a way that the recess proceeds in a circumferential direction with respect to a shaft of the turbine, when the turbine disc is coupled to the turbine.
22. The turbine disc of claim 21,
wherein the recess is formed in such a way that the recess and the balancing weight are coupleable by a dovetail connection.
23. The turbine disc of claim 15,
wherein the first protrusion is located at a first position and the second protrusion is located at a second position,
wherein a first distance between the first position and a centre of the turbine disc is larger than a second distance between the second position and the centre of the turbine disc.
24. The turbine disc of claim 15,
wherein the first protrusion and the second protrusion are detachably mounted on the turbine disc.
25. The turbine disc of claim 15,
wherein the first protrusion and the second protrusion are integrally formed with the turbine disc.
26. The turbine disc of claim 16,
wherein the second surface is free of a balancing weight arrangement and a further sealing section.
27. A turbine, comprising:
a turbine part, and
a turbine disc according to claim 15,
wherein the turbine disc is coupleable to the turbine part in such a way that a sealing section of a first protrusion of the turbine disc seals a fluid passage between the turbine disc and the turbine part.
28. The turbine of claim 27,
wherein the turbine is a gas turbine.
29. A method of producing a turbine disc for a turbine, the method comprising:
forming a first protrusion and a second protrusion onto the turbine disc,
wherein the first protrusion and the second protrusion are formed in such a way that a balancing weight is coupleable between the first protrusion and the second protrusion, and
wherein the first protrusion comprises a sealing section that is capable of sealing a fluid passage between the turbine disc and a further turbine part of the turbine.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of fabricating an integrated circuit, the method comprising:
forming a top surface of a first region of the integrated circuit at a higher level than a top surface of a second region of the integrated circuit;
depositing a filler material over the top surface of the first region and over the top surface of the second region;
depositing a protective material over the filler; and
planarizing the filler material by performing a multi-part etch process, a first part of the multi-part etch process including an etch chemistry selective for the protective material, and a second part of the multi-part etch process including an etch chemistry selective for the filler material, wherein an etch rate of the protective material is higher than an etch rate of the filler material during the first part and wherein an etch rate of the filler material is higher than an etch rate of the protective material during the second part.
2. The method of claim 1, wherein the first region comprises lines separated by spaces, the filler material substantially filling the spaces.
3. The method of claim 1, wherein the protective material is thinner over the first region than over the second region.
4. The method of claim 3, wherein the protective material comprises a spin-on material.
5. The method of claim 3, further comprising removing substantially all of the protective material over the first region during the first part of the multi-part etch process, wherein at least a portion of the protective material remains over the second region upon completion of the first part of the multi-part etch process.
6. The method of claim 1, further comprising removing substantially all of the protective material during the second part of the multi-part etch process.
7. The method of claim 6, further comprising removing a portion of the first region during the second part of the multi-part etch process, wherein an etch rate for removing the first region during the second part of the multi-part etch process is substantially the same as an etch rate for removing the filler material during the second part of the multi-part etch process.
8. The method of claim 1, wherein the first region comprises pitch multiplied features, wherein the top surface of the first region comprises tops of the pitch multiplied features.
9. The method of claim 1, further comprising performing a chemical mechanical planarization subsequent to the second etch part of the multi-part etch process.
10. The method of claim 1, further comprising forming pitch multiplied features over the planarized filler material.
11. A method for fabricating an integrated circuit, the method comprising:
forming a top surface of a first region of the integrated circuit at a higher level than a top surface of a second region of the integrated circuit;
depositing a first material over the top surface of the first region and over the top surface of the second region;
depositing a second material over the first material, the second material having a greater thickness over the second region than over the first region; and
subjecting the first and second materials to a planarization process, comprising:
performing a first etch, wherein an etch rate for removing the second material during the first etch is higher than an etch rate for removing the first material during the first etch, and wherein at least a portion of the second material remains over the second region upon completion of the first etch.
12. The method of claim 11, wherein the planarization process further comprises performing a second etch, an etch rate for removing the second material during the second etch being lower than an etch rate for removing the first material during the second etch.
13. The method of claim 12, further comprising removing substantially all of the second material during the second etch, wherein a top surface of the first region upon completion of the second etch and a top surface of the first material over the second region upon completion of the second etch have a substantially same height.
14. The method of claim 13, further comprising removing a portion of the first region during the second etch, wherein an etch rate for removing the portion of the first region during the second etch is substantially the same as the etch rate for removing the first material during the second etch.
15. The method of claim 12, further comprising performing a chemical mechanical planarization subsequent to the second etch.
16. The method of claim 11, further comprising removing substantially all of the second material over the first region during the first etch.
17. The method of claim 11, wherein the second material comprises a spin-on material.
18. The method of claim 11, wherein the first region comprises lines in a memory array, the lines being separated by spaces.
19. The method of claim 18, wherein the first material comprises a filler material substantially filling the spaces between the lines.
20. The method of claim 11, wherein the first region comprises pitch multiplied features, wherein the top surface of the first region comprises tops of the pitch multiplied features.