1. A method of operating a business to insure accurate order entry and provide increased efficiency and satisfaction to a customer of said business, said method comprising the steps of:
(a) providing a system having a predetermined number of specific job based touch screen interfaces with a computer having a server, said touch screen interfaces selected from a group consisting of a customer interface, an order taker interface, a delivery interface and a manager interface;
(b) providing said system with an interface which enables said customer to place an order which can be continually updated as certain items are sold out;
(c) entering said customer’s order which is sent to an appropriate party who will read said order and prioritize by time received;
(d) filling said customer’s order by said appropriate party; and
(e) delivering said order to said customer.
2. A method of operating a business, according to claim 1, wherein said business is a restaurant and said appropriate party in step (c) is at least one of a chef and a bartender.
3. A method of operating a business, according to claim 2, wherein said appropriate party in step (c) is each of said chef and said bartender.
4. A method of operating a business, according to claim 2, wherein said system further includes an interface which enables said customer to view a menu prior to placing their order with at least one of said chef and said bartender
5. A method of operating a business, according to claim 4, wherein said on said menu is continuously updated.
6. A method of operating a business, according to claim 4, wherein said appropriate party further includes a hostess and said method includes allowing said hostess to interface with at least one of a reservation manager program, table status monitor, full restaurant overview, incoming and outgoing call log, instant messenger service entertainment controls and to allow said hostess to communicate pre-selected messages to said patrons’ table.
7. A method of operating a business, according to claim 4, wherein said method further includes providing another interface in said system which enables said patron to at least one of access pre-selected advertising, a predetermined number of internet web sites, various television programs and various preselected games.
8. A method of operating a business, according to claim 7, wherein at least two of said pre-selected advertising, said internet web sites, said television programs and said preselected games can be accessed by said patron.
9. A method of operating a business, according to claim 8, wherein each of said pre-selected advertising, said internet web sites, said television programs and said preselected games can be accessed by said patron.
10. A method of operating a business, according to claim 1, wherein said method only allows certain personnel access to all interfaces.
11. A method of operating a business, according to claim 2, wherein said method enables a patron to pay their bill at a table.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of producing a silicon single crystal through a Czochralski method comprising a melting process in which a polycrystalline silicon material is filled in a crucible and melted under heating to form a polycrystalline silicon melt, and a pulling process in which a seed crystal is dipped into the melt and a silicon single crystal having a given shape is formed while pulling the seed crystal upward under conditions of given temperature and pulling speed,
wherein the pulling process includes a process of conducting a neck trial pulling for the trial formation of a neck portion after the seed crystal is dipped into the melt set at a given temperature and before a neck actual pulling for the formation of a neck portion is conducted, and it is judged whether or not the temperature of the melt is a temperature suitable for the formation of the neck portion from a change of a diameter in the neck portion formed by the neck trial pulling.
2. A method of producing a silicon single crystal according to claim 1, wherein as a result of the judgment that the temperature of the melt is a temperature unsuitable for the formation of the neck portion, the neck trial pulling is conducted again after the temperature of the melt is adjusted to stabilize the melt.
3. A method of producing a silicon single crystal according to claim 2, wherein the adjustment on the temperature of the melt is conducted according to the following expressions:
T1=T0+H\xd7(X\u2212P)
H=0.95
provided that a melt temperature after adjustment is T1 \xb0 C., a melt temperature before adjustment is T0 \xb0 C., a temperature correction factor is H \xb0 C.mm, a target diameter of a neck portion formed by neck trial pulling is P mm and a diameter of a neck portion formed by neck trial pulling is X mm.
4. A method of producing a silicon single crystal according to claim 1, wherein as a result of the judgment, a value of a temperature sensor measuring the temperature of the melt is corrected when the temperature of the melt has been adjusted at least once.
5. A method of producing a silicon single crystal according to claim 4, wherein the temperature sensor is a radiation thermometer.
6. A method of producing a silicon single crystal according to claim 4, wherein the correction on the value of the temperature sensor is conducted according to the following expressions:
T3=kT2
k=k\u2032\xd7T4T5
provided that a display temperature after correction is T3 \xb0 C., a melt temperature conversion factor after correction is k, a display temperature before correction is T2 \xb0 C., a melt temperature conversion factor before correction is k\u2032, an initial target temperature is T4 \xb0 C. and a final target temperature is T5 \xb0 C..
7. A method of producing a silicon single crystal according to claim 1, wherein as a result of the judgment that the temperature of the melt is a temperature suitable for the formation of the neck portion, the neck trial pulling is followed by the neck actual pulling.
8. A method of producing a silicon single crystal through a Czochralski method comprising a melting process in which a polycrystalline silicon material is filled in a crucible and melted under heating to form a polycrystalline silicon melt, and a pulling process in which a seed crystal is dipped into the melt and a silicon single crystal having a given shape is formed while pulling the seed crystal upward under conditions of given temperature and pulling speed,
wherein the pulling process includes a process of conducting a neck trial pulling for the trial formation of a neck portion after the seed crystal is dipped into the melt set at a given temperature and before a neck actual pulling for the formation of a neck portion is conducted, and it is judged whether or not the temperature of the melt is a temperature suitable for the formation of the neck portion from a change of a diameter in the neck portion formed by the neck trial pulling and a speed of the neck trial pulling.
9. A method of producing a silicon single crystal according to claim 8, wherein as a result of the judgment that the temperature of the melt is a temperature unsuitable for the formation of the neck portion, the neck trial pulling is conducted again after the temperature of the melt is adjusted to stabilize the melt.
10. A method of producing a silicon single crystal according to claim 9, wherein the adjustment on the temperature of the melt is conducted according to the following expressions:
T1=T0+H\xd7(X\u2212P)\xd7(YQ)
H=0.95
provided that a melt temperature after adjustment is T1 \xb0 C., a melt temperature before adjustment is T0 \xb0 C., a temperature correction factor is H \xb0 C.\xb7mm2s, a target diameter of a neck portion formed by neck trial pulling is P mm, a diameter of a neck portion formed by neck trial pulling is X mm, a target speed of pulling a neck portion is Q mms and a speed of neck trial pulling is Y mms.
11. A method of producing a silicon single crystal according to claim 8, wherein as a result of the judgment, a value of a temperature sensor measuring the temperature of the melt is corrected when the temperature of the melt has been adjusted at least once.
12. A method of producing a silicon single crystal according to claim 11, wherein the temperature sensor is a radiation thermometer.
13. A method of producing a silicon single crystal according to claim 12, wherein the correction on the value of the temperature sensor is conducted according to the following expressions:
k=k\u2032\xd7M(\u03bb,T5)M(\u03bb,T4
M(\u03bb,Tx)=C1\u03bb5\xd71{exp(C2\u03bbTx)\u22121}
T3=(C2\u03bb)(1ln((C1\u03bb5)(1E)+1))
(wherein E=(kk\u2032)M(\u03bb,T2);
C1: first constant of radiation (3.7415\xd710\u221216)W\xb7m2; and
C2: second constant of radiation (0.014388)m\xb7K)
provided that a display temperature after correction is T3 K, a melt temperature conversion factor after correction is k, a display temperature before correction is T2 K, a melt temperature conversion factor before correction is k\u2032, spectral radiant energy from an object is M (\u03bb,Tx)W\xb7m\u22123, a measuring central wavelength of a radiation thermometer is \u03bbm, a melt temperature setting value in neck trial pulling is T4 K and a value of a temperature sensor in neck trial pulling is T5 K.
14. A method of producing a silicon single crystal according to claim 11, wherein the correction on the value of the temperature sensor is conducted according to the following expressions:
T3=kT2
k=k\u2032\xd7T6T7
provided that a display temperature after correction is T3 \xb0 C., a melt temperature conversion factor after correction is k, a display temperature before correction is T2 \xb0 C., a melt temperature conversion factor before correction is k\u2032, an initial target temperature is T6 \xb0 C. and a final target temperature is T7 \xb0 C..
15. A method of producing a silicon single crystal according to claim 8, wherein as a result of the judgment that the temperature of the melt is a temperature suitable for the formation of the neck portion, the neck trial pulling is followed by the neck actual pulling.