1. A resistance variable device comprising:
a substrate having a first electrode formed thereover;
a resistance variable chalcogenide comprising material having metal ions diffused therein received operatively adjacent the first electrode, the chalcogenide material comprising AxBy, where \u201cB\u201d is selected from the group consisting of S, Se and Te and mixtures thereof, and where \u201cA\u201d comprises at least one element which is selected from Group 13, Group 14, Group 15, or Group 17 of the periodic table;
a second electrode received operatively adjacent the resistance variable chalcogenide comprising material; and
the second electrode and resistance variable chalcogenide comprising material operatively connecting at an interface, the chalcogenide comprising material having a first region which is displaced from the interface at least by a chalcogenide material interface region having a higher content of \u201cA\u201d than the first region, and no metal chalcogenide agglomerations at the interface.
2. The device of claim 1 wherein \u201cA\u201d comprises Ge or Si.
3. The device of claim 1 wherein \u201cA\u201d comprises Ge.
4. The device of claim 1 wherein \u201cA\u201d comprises Ge, and \u201cB\u201d comprises Se.
5. The device of claim 1 wherein \u201cA\u201d comprises Ge, \u201cB\u201d comprises Se, and the metal ions comprise Ag.
6. The device of claim 1 wherein the interface region has a thickness of less than or equal to 100 Angstroms.
7. The device of claim 1 wherein the interface region has a thickness of greater than or equal to 10 Angstroms.
8. The device of claim 1 wherein the interface region has a thickness of less than or equal to 100 Angstroms and greater than or equal to 10 Angstroms.
9. The device of claim 1 wherein the interface region is substantially homogenous.
10. The device of claim 1 wherein the interface and first regions have substantially the same concentration of the metal.
11. The device of claim 1 wherein the interface region is substantially homogenous, and the interface and first regions have substantially the same concentration of the metal.
12. The device of claim 1 wherein the second electrode material predominately comprises elemental silver.
13. A resistance variable device comprising:
a substrate having a first electrode formed thereover;
a resistance variable chalcogenide comprising material having silver ions diffused therein received operatively adjacent the first electrode, the chalcogenide material comprising GexSey, wherein the atomic percent of silver within the resistance variable chalcogenide comprising material is approximately 20 percent or less;
a second electrode received operatively adjacent the resistance variable chalcogenide comprising material; and
the second electrode and resistance variable chalcogenide comprising material operatively connecting at an interface, the chalcogenide comprising material having a first region which is displaced from the interface at least by a chalcogenide material interface region having a higher content of Ge than the first region, and no silver chalcogenide agglomerations at the interface.
14. A resistance variable device comprising:
a substrate having a first electrode formed thereover;
a resistance variable chalcogenide comprising material having silver ions diffused therein received operatively adjacent the first electrode, the chalcogenide material comprising GexSey, wherein the resistance variable chalcogenide comprising material is not saturated with silver ions;
a second electrode received operatively adjacent the resistance variable chalcogenide comprising material; and
the second electrode and resistance variable chalcogenide comprising material operatively connecting at an interface, the chalcogenide comprising material having a first region which is displaced from the interface at least by a chalcogenide material interface region having a higher content of Ge than the first region, and no silver chalcogenide agglomerations at the interface.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A synchronous processing system for processing signals from an oscillating sensor, wherein the sensor provides a first and second sense signals, the sense signals having at least a component out-of-phase with the oscillation, and further provides an oscillating signal synchronized to the oscillation of the sensor, the system further comprising a first scaling circuit coupled to the sensor for scaling the oscillating signal in response to a programmable first scale factor; a second scaling circuit coupled to the sensor for scaling the oscillating signal in response to a programmable second scale factor, a first combining circuit coupled to the first scaling circuit for combining the first scaled oscillating signal to the first sensed signal, and a second combining circuit coupled to the second scaling circuit for combining the second scaled oscillating signal to the second sensed signal.
2. A synchronous processing system as in claim 1 wherein the first and second scale factor are determined so as to minimize the error component of the sense signals in-phase with the oscillating signal.
3. A synchronous processing system as in claim 2, the circuit further comprising a third scaling circuit for scaling the first sense signal in response to a third scale factor; and a fourth scaling circuit for scaling the second sense signal in response to a fourth scale factor, wherein the first combining circuit further combines the scaled second sense signal to the first sensed signal, and the second combining circuit combines the scaled first sense signal to the second sensed signal.
4. A synchronous processing system as in claim 3 further comprising two demodulators, one coupled to demodulate each of the combined sense signals with a periodic signal phase-locked to the oscillating signal.
5. A synchronous processing system as in claim 4 wherein the demodulators can selectively operate in phase relative to the oscillating signal and wherein the first scale factor is determined in response to the output from the demodulator coupled to receive combined first sense signal and the second scale factor is determined in response to the output from the demodulator coupled to, receive the combined second sense signal.
6. A synchronous processing system as in claim 4 further comprising two analog-to-digital converters, one coupled to rectify and to integrate the demodulated first sense signal over an interval synchronized with the oscillating signal and the other coupled to rectify and to integrate the demodulated second sense signal over an interval synchronized with the oscillating signal.
7. A synchronous processing system as in claim 6 wherein the demodulators can selectively operate in phase relative to the oscillating signal and wherein the first scale factor is determined in response to the output from the analog-to-digital converter coupled to receive combined and demodulated first sense signal and the second scale factor is determined in response to the output from the analog-to-digital converter coupled to receive the combined and demodulated second sense signal.
8. A method for processing signals from an oscillating sensor, wherein the sensor provides a first and second sense signals, the sense signals having at least a component out-of-phase with the oscillation, and further provides an oscillating signal synchronized to the oscillation of the sensor, the method comprising the steps of scaling the oscillating signal in response to a programmable first scale factor; scaling the oscillating signal in response to a programmable second scale factor, first combining the first scaled oscillating signal with the first sensed signal, and second combining the second scaled oscillating signal with the second sensed signal.
9. A method for processing signals from an oscillating sensor as in claim 8 further comprising the steps of determining the first and second scale factor so as to minimize the error component of the sense signals in-phase with the oscillating signal.
10. A method for processing signals from an oscillating sensor as in claim 9 further comprising the steps of sealing the first sense signal in response to a third scale factor; scaling the second sense signal in response to a fourth scale factor, wherein the first step of combining further combines the scaled second sense signal to the first sensed signal, and the second step of combining combines the scaled first sense signal to the second sensed signal.
11. A method for processing signals from an oscillating sensor as in claim 9 further comprising the step of demodulating each of the scaled and combined sense signals with a periodic signal having phase-locked to the oscillating signal.
12. A method for processing signals from an oscillating sensor as in claim 11, wherein the step of demodulating further includes the step of selectively demodulating each of the scaled and combined sense signals with a periodic signal having phase in quadrature relative to the oscillating signal and wherein the steps of determining the first and second scale factor is responsive to the output from the demodulating step.