1. A catalyst composition comprising:
a complex of cobalt, iodide, and an onium cation or an alkali metal cation of the general formula Y2CoI4, wherein Y is said onium cation or said alkali metal cation: and
a phosphine ligand of the general formula
wherein phosphorus atoms P are bridged by 3 atoms of R17, wherein R17 is selected from the group consisting of substituted or unsubstituted alkylene, cycloalkylene, arylene, and biarylene, each having up to 22 carbon atoms; wherein a heteroatom, optionally, can substitute for one or more of said carbon atoms, wherein said heteroatom is selected from the group consisting of nitrogen, oxygen, sulfur, and phosphorus; and
R16 is selected from the group consisting of substituted or unsubstituted alkyl, alkoxy, cycloalkyl, aryl, and aryloxy, each having up to 20 carbon atoms; and
a phosphonium iodide, wherein said phosphonium iodide is selected from the group consisting of methyltriphenylphosphonium iodide, methyltributylphosphonium iodide, methyltrioctylphosphonium iodide, butyltridodecylphosphonium iodide, tetraoctylphosphonium iodide, tetrabutylphosphonium iodide, triphenyl(hexyl)phosphonium iodide, triphenyl(octyl)phosphonium iodide, tribenzyl(octyl)phosphonium iodide, tribenzyl(dodecyl)phosphonium iodide, triphenyl(decyl)phosphonium iodide, triphenyl(dodecyl)phosphonium iodide, tetrakis(2-methylpropyl)phosphonium iodide, tris(2-methylpropyl)-(butyl)phosphonium iodide, triphenyl(3,3-dimethylbutyl)phosphonium iodide, triphenyl(3-methylbutyl)phosphonium iodide, tris(2-methylbutyl)(3-methyl-butyl)phosphonium iodide, triphenyl2-trimethylsilylethylphosphonium iodide, tris(p-chlorophenyl)(dodecyl)phosphonium iodide, hexyltris(2,4,6-trimethylphenyl)phosphonium iodide, tetradecyltris(2,4,6-trimethyl-phenyl)phosphonium iodide, dodecyltris(2,4,6-trimethylphenyl)phosphonium iodide, methyltrioctylphosphonium iodide, methyltributylphosphonium iodide, and methyltricyclohexylphosphonium iodide.
2. The catalyst composition according to claim 1, wherein said onium cation is of the general formula (I) or (II):
wherein X is phosphorus (P), R1 is methyl, and R2, R3, and R4 are independently selected from alkyl having up to 12 carbon atoms and aryl, wherein said aryl is selected from only one of the group consisting of phenyl, tolyl, xylyl, and mesityl; R5 is methyl and R6, R7, R8, R9, and R10 are hydrogen.
3. The catalyst composition according to claim 1, wherein said onium cation is selected from the group consisting of methyltriphenylphosphonium, methyltributylphosphonium, methyltrioctylphosphonium, and 1-methylpyridinium; and wherein said phosphine ligand is selected from the group consisting of 1,3-bis(diphenylphosphino)propane; 1,1,1-tris(diphenylphosphinomethyl)ethane; 1,1,1-tris(diethylphosphinomethyl)ethane; 1,3-bis(dicyclohexylphosphino)propane; 1,3-bis(dimethylphosphino)propane; 1,3-bis(diisopropylphosphino)propane; 1,3-bis(di-tert-butylphosphino)propane; (2-butoxy-2-((diphenylphosphino)methyl)propane-1,3-diyl)bis(diphenylphosphine); 1,8-bis(diphenylphosphino)naphthalene; bicyclo2.2.1heptane-2,7-diylbis(diphenylphosphine); 1,3-bis(diphenylphosphino)cyclohexane; 1,3-bis(diphenylphosphino)cyclopentane; and 1,3-bis(diphenylphosphino)cyclobutane.
4. The catalyst composition according to claim 1, wherein said onium cation comprises methyltriphenylphosphonium; said phosphine ligand is selected from the group consisting of 1,3-bis(diphenylphosphino)propane and 1,1,1-tris(diphenylphosphinomethyl)ethane, and 1,1,1-tris(diethylphosphinomethyl)ethane; and said phosphonium iodide is selected from the group consisting of methyltriphenylphosphonium iodide, methyltributylphosphonium iodide, and methyltrioctylphosphonium iodide.
5. The catalyst composition according to claim 1, wherein the molar ratio of said phosphine ligand to said cobalt (phosphine ligand:cobalt) ranges from 0.025:1 to 2:1 and the molar ratio of said phosphonium iodide to cobalt (phosphonium iodide:cobalt) ranges from 0.1:1 to 50:1.
6. The catalyst composition according to claim 1, wherein said onium cation comprises methyltriphenylphosphonium, said phosphine ligand comprises 1,3-bis(diphenylphosphino)propane, and said phosphonium iodide comprises methyltriphenylphosphonium iodide, and wherein the molar ratio of said phosphine ligand to said cobalt (phosphine ligand:cobalt) ranges from 0.025:1 to 1:1 and the molar ratio of said phosphonium iodide to cobalt (phosphonium iodide:cobalt) ranges from 0.1:1 to 20:1.
7. A process for the preparation of a crude reductive carbonylation product comprising contacting hydrogen, carbon monoxide, and methanol in the presence of a catalyst composition to form said crude reductive carbonylation product comprising acetaldehyde equivalents in a higher mole percent than acetic acid equivalents or ethanol equivalents, each based on the total moles of said acetaldehyde equivalents, said acetic acid equivalents, and said ethanol equivalents:
wherein said catalyst composition comprises a complex of cobalt, iodide, and an onium cation of the general formula Y2CoI4, wherein Y is said onium cation of the general formula (I) or (II)
wherein X is phosphorus (P), R1 is methyl, and R2, R3, and R4 are independently selected from alkyl having up to 12 carbon atoms and aryl, wherein said aryl is selected from only one of the group consisting of phenyl, tolyl, xylyl, and mesityl; R5 is methyl and R6, R7, R8, R9, and R10 are hydrogen;
and a phosphine ligand selected from the group consisting of 1,3-bis(diphenylphosphino)propane; 1,1,1-tris(diphenylphosphinomethyl)ethane; 1,1,1-tris(diethylphosphinomethyl)ethane; 1,3-bis(dicyclohexylphosphino)propane; 1,3-bis(dimethylphosphino)propane; 1,3-bis(diisopropylphosphino)propane; 1,3-bis(di-tert-butylphosphino)propane; (2-butoxy-2-((diphenylphosphino)methyl)propane-1,3-diyl)bis(diphenylphosphine); 1,8-bis(diphenylphosphino)naphthalene; bicyclo2.2.1heptane-2,7-diylbis(diphenylphosphine); 1,3-bis(diphenylphosphino)cyclohexane; 1,3-bis(diphenylphosphino)cyclopentane; and 1,3-bis(diphenylphosphino)cyclobutane; and
a phosphonium iodide,
wherein said crude reductive carbonylation product comprises less than 1 weight percent of methyl iodide, based on the total weight of said crude reductive carbonylation product.
8. The process according to claim 7, wherein said phosphine ligand is selected from the group consisting of 1,3-bis(diphenylphosphino)propane; 1,1,1-tris(diphenylphosphinomethyl)ethane; and 1,1,1-tris(diethylphosphinomethyl)ethane; and said phosphonium iodide is selected from the group consisting of methyltriphenylphosphonium iodide, methyltributylphosphonium iodide, and methyltrioctylphosphonium iodide.
9. The process according to claim 7, wherein said onium cation comprises methyltriphenylphosphonium; said phosphine ligand comprises 1,3-bis(diphenylphosphino)propane; and said phosphonium iodide comprises methyltriphenylphosphonium iodide.
10. The process according to claim 7, wherein said cobalt is present in an amount ranging from 0.02 moles to 5 moles of said cobalt per 100 moles of said methanol, the mole ratio of said phosphine ligand to said cobalt (phosphine ligand:cobalt) ranges from 0.025:1 to 2:1, and the mole ratio of said phosphonium iodide to said cobalt (phosphonium iodide:cobalt) ranges from 1:1 to 20:1.
11. The process according to claim 7, wherein the molar ratio of said carbon monoxide to said hydrogen, CO:H2, ranges from 10:1 to 1:10.
12. The process according to claim 7, wherein the molar ratio of said carbon monoxide to said hydrogen, CO:H2, ranges from 5:1 to 1:5.
13. The process according to claim 7, wherein said process is carried out at a temperature ranging from 100\xb0 C. to 250\xb0 C. and at a pressure ranging from 100 kPa (15 psig) to 60 MPa (8700 psig).
14. The process according to claim 7, wherein said process is carried out at a temperature ranging from 150\xb0 C. to 230\xb0 C. and at a pressure ranging from 1 MPa (150 psig) to 40 MPa (5800 psig).
15. The process according to claim 7, wherein said contacting further occurs in the presence of a solvent selected the group consisting of alkanes and arenes having 6 to 20 carbon atoms, ketones having 5 to 20 carbon atoms, esters having 5 to 20 carbon atoms, ethers having 5 to 20 carbon atoms, and alky carbonate esters having 3 to 20 carbon atoms.
16. The process according to claim 7, wherein the CO:H2 molar ratio ranges from 5:1 to 1:5, said process is carried out at a temperature ranging from 100\xb0 C. to 250\xb0 C. and a pressure ranging from 100 kPa (15 psig) to 60 MPa (8700 psig), and wherein said crude reductive carbonylation product comprises acetaldehyde equivalents in a higher mole percent than acetic acid equivalents or ethanol equivalents, each based on the total moles of acetaldehyde equivalents, acetic acid equivalents, and ethanol equivalents.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An electronic control device comprising:
a substrate;
a plurality of component-mounted wires disposed on the substrate;
a plurality of electronic components mounted on the respective component-mounted wires;
a common wire disposed on the substrate and coupled with each of the electronic components;
an interrupt wire coupled between one of the component-mounted wires and the common wire, the interrupt wire configured to melt in accordance with heat generated by an overcurrent so as to interrupt a connection between the one of the component-mounted wires and the common wire via the interrupt wire; and
a heat release portion attached to the common wire and made of the same material as the common wire, the heat release portion disposed at a position where a wiring distance from the interrupt wire is shorter than a wiring distance between the interrupt wire and any of the electronic components except for one of the electronic components mounted on the one of the component-mounted wires.
2. The electronic control device according to claim 1,
wherein the heat release portion includes a heat release wire disposed on the substrate so as to be adjacent to the common wire.
3. The electronic control device according to claim 1,
wherein the substrate includes a layer coupling portion, and
wherein the heat release portion includes a heat release member disposed inside the layer coupling portion.
4. The electronic control device according to claim 3,
wherein the substrate further includes another layer coupling portion, and
wherein the heat release member is disposed inside each of the layer coupling portions.
5. The electronic control device according to claim 3,
wherein the substrate has a first surface on which the common wire is disposed and a second surface opposite to the first surface,
wherein the heat release member includes a portion disposed inside the layer coupling portion and a portion disposed inside the substrate or disposed on the second surface, and
wherein the portions of the heat release member are in contact with each other.
6. The electronic control device according to claim 1,
wherein the interrupt wire is a first interrupt wire coupled with a first one of the component-mounted wires on which a first one of the electronic components is mounted,
wherein the heat release portion is a first heat release portion disposed at a position where a wiring distance from the first interrupt wire is shorter than a wiring distance between the first interrupt wire and any of the electronic components except for the first one of the electronic components,
the electronic control device further comprising:
a second interrupt wire coupled with a second one of the component-mounted wires on which a second one of the electronic components is mounted; and
a second heat release portion disposed at a position where a wiring distance from the second interrupt wire is shorter than a wiring distance between the second interrupt wire and any of the electronic components except for the second one of the electronic components.
7. The electronic control device according to claim 1,
wherein the interrupt wire is a first interrupt wire coupled with a first one of the component-mounted wires on which a first one of the electronic components is mounted, the electronic control device further comprising a second interrupt wire coupled with a second one of the component-mounted wires on which a second one of the electronic components is mounted,
wherein the heat release portion is disposed at a position where a wiring distance from each of the first interrupt wire and the second interrupt wire is shorter than a wiring distance between each of the first interrupt wire and the second interrupt wire and any of the electronic components except for the first one of the electronic components and the second one of the electronic components.
8. The electronic control device according to claim 1,
wherein the interrupt wire includes a first wire section and a second wire section that is shorter than the first wire section,
wherein the first wire section and the second wire section are coupled with each other at a predetermined angle, and
wherein the predetermined angle is determined so that one of the first wire section and the second wire section is coupled with the common wire and the other is coupled with the one of the component-mounted wires.
9. The electronic control device according to claim 1, further comprising
a protective layer covering a surface of the substrate including the interrupt wire, the protective layer defining an opening portion through which at least a part of the interrupt wire is exposed.
10. The electronic control device according to claim 1, further comprising
an adherent member disposed adjacent to the interrupt wire, the adherent member configured so that a melt conductor generated by melting of the interrupt wire adheres to the adherent member.
11. The electronic control device according to claim 1, further comprising
a connection wire via which the interrupt wire is coupled with a connection object that is one of the common wire and the one of the component-mounted wires,
wherein a side end of the connection wire is smoothly connected with a side end of the interrupt wire, and
wherein a wire width of the connection wire increases toward the connection object.
12. The electronic control device according to claim 1, wherein
the common wire is a power supply wire.
13. A control system comprising:
a power supply path coupled with a power source;
a fuse disposed on the power supply path;
a device coupled with the power source by the power supply path via the fuse; and
the electronic control device according to claim 12,
wherein the power supply wire in the electronic control device is coupled with the power source by the power supply path via the fuse.
14. An electronic control device comprising:
a substrate;
a wire disposed on the substrate;
an electronic component coupled with the wire;
an interrupt wire coupled between the electronic component and the wire,
the interrupt wire configured to melt in accordance with heat generated by an overcurrent so as to interrupt a connection between the electronic component and the wire via the interrupt wire;
a protected electronic component disposed on the substrate; and
a heat diffusion wire disposed adjacent to the interrupt wire, the heat diffusion wire diffusing the heat by the overcurrent throughout the heat diffusion wire and storing the heat so as to protect the protected electronic component against the heat.
15. The electronic control device according to claim 14,
wherein the heat diffusion wire is disposed between the interrupt wire and the protected electronic component.
16. The electronic control device according to claim 14,
wherein the protected electronic component includes an oscillator.
17. The electronic control device according to claim 14,
wherein the protected electronic component is mounted on a surface of the substrate.
18. The electronic control device according to claim 14, further comprising:
a protective layer covering a surface of the substrate and defining an opening portion through which at least a part of the heat diffusion wire is exposed; and
a heat release member disposed on the part of the heat diffusion wire exposed through the opening portion.
19. The electronic control device according to claim 18,
wherein the heat release member includes a solder.
20. The electronic control device according to claim 14,
wherein the substrate includes a plurality of layers,
wherein the heat diffusion wire includes a plurality of wire layers disposed on the respective layers of the substrate, and
wherein the heat diffusion wire defines a through hole via which the wire layers are thermally coupled.
21. electronic control device according to claim 20,
wherein the heat diffusion wire further includes a filler disposed inside the through hole to increase a heat-transfer efficiency between the wire layers in the heat diffusion wire.
22. The electronic control device according to claim 20,
wherein the protected electronic component is mounted on a surface of the substrate, wherein the wire layers include an outer wire layer disposed on the surface of the substrate and an inner wire layer disposed inside the substrate, and
wherein a surface area of the inner wire layer is larger than a surface area of the outer wire layer.
23. The electronic control device according to claim 22,
wherein the inner wire layer is disposed in such a manner that at least a part of the inner wire layer overlap the interrupt wire in a thickness direction of the substrate.
24. The electronic control device according to claim 22,
wherein the inner wire layer is disposed in such a manner that at least a part of the inner wire layer overlap the electronic component in a thickness direction of the substrate.
25. The electronic control device according to claim 14,
wherein the wire includes a power supply wire that is coupled with the electronic component and the protected electronic component.
26. A control system comprising:
a power supply path coupled with a power source;
a fuse disposed on the power supply path;
a device coupled with the power source by the power supply path via the fuse; and
the electronic control device according to claim 25,
wherein the power supply wire in the electronic control device is coupled with the power source by the power supply path via the fuse.