1. A method of forming a more highly-oriented silicon layer, comprising:
forming an aluminum (Al) layer on a base substrate;
forming a more highly-oriented Al layer by recrystallizing the Al layer;
forming a more highly-oriented \u03b3-Al2O3 layer on the more highly-oriented Al layer; and
epitaxially growing a silicon layer on the more highly-oriented \u03b3-Al2O3 layer to form the more highly-oriented silicon layer.
2. The method of claim 1, wherein forming the more highly-oriented Al layer includes recrystallizing the Al layer under vacuum using at least one method selected from the group including excimer laser annealing (ELA), sequential lateral solidification (SLS) and hot roll scanning.
3. The method of claim 1, wherein forming the more highly-oriented \u03b3-Al2O3 layer includes oxidizing the more highly-oriented Al layer.
4. The method of claim 3, wherein forming the more highly-oriented \u03b3-Al2O3 layer includes thermally oxidizing the more highly-oriented Al layer in an oxygen-enriched atmosphere or an ozone atmosphere.
5. The method of claim 4, wherein thermally oxidizing is performed at a process temperature of about 100\xb0 C. to 650\xb0 C.
6. The method of claim 3, wherein forming the more highly-oriented \u03b3-Al2O3 layer includes performing excimer laser annealing (ELA) on the more highly-oriented Al layer in an oxygen-enriched atmosphere or an ozone atmosphere.
7. The method of claim 3, further comprising:
epitaxially growing \u03b3-Al2O3 on the more highly-oriented \u03b3-Al2O3 layer formed by oxidizing the Al layer.
8. The method of claim 1, wherein forming the more highly-oriented \u03b3-Al2O3 layer includes using an anodizing method.
9. The method of claim 1, wherein forming the more highly-oriented \u03b3-Al2O3 layer includes using an epitaxial growth method.
10. The method of claim 9, wherein the epitaxial growth method is performed using metal organic molecular beam epitaxy (MOMBE).
11. The method of claim 1, wherein forming a more highly-oriented Al layer and a more highly-oriented \u03b3-Al2O3 layer on the more highly-oriented Al layer is performed simultaneously by recrystallizing and oxidizing the Al layer.
12. The method of claim 11, wherein forming the more highly-oriented \u03b3-Al2O3 layer includes performing excimer laser annealing (ELA).
13. The method of claim 11, wherein forming the more highly-oriented Al layer and the more highly-oriented \u03b3-Al2O3 layer includes melting the Al layer a vacuum furnace or a rapid thermal annealing (RTA) furnace, and cooling the Al layer in an oxygen-enriched atmosphere or an ozone atmosphere.
14. The method of claim 1, wherein forming the silicon layer is includes using a low pressure chemical vapor deposition (LPCVD) method or an ultra-high vacuum chemical vapor deposition (UHV CVD) method.
15. The method of claim 11, wherein forming the silicon layer includes using a low pressure chemical vapor deposition (LPCVD) method or an ultra-high vacuum chemical vapor deposition (UHV CVD) method.
16. A substrate, comprising:
a base substrate;
a more highly-oriented Al layer formed on the base substrate;
a more highly-oriented \u03b3-Al2O3 layer formed on the more highly-oriented Al layer; and
a more highly-oriented silicon layer formed on the more highly-oriented \u03b3-Al2O3 layer.
17. The substrate of claim 16, wherein the Al layer is formed of one selected from the group including Al and Ni\u2014Al alloys.
18. The substrate of claim 17, wherein the more highly-oriented Al layer has a grain size of about 50 nm to 20 \u03bcm.
19. The substrate of claim 16, wherein the more highly-oriented \u03b3-Al2O3 layer has a grain size of about 50 nm to 20 \u03bcm.
20. The substrate of claim 16, wherein the silicon layer is formed of one selected from the group including silicon (Si) and silicon germanium (SiGe).
21. The substrate of claim 16, wherein the silicon layer has a grain size of about 50 nm to 20 \u03bcm.
22. The substrate of claim 16, wherein the base substrate is formed of glass.
23. The substrate of claim 16, further comprising a buffer layer formed between the Al layer and the base substrate.
24. The substrate of claim 23, wherein the buffer layer is formed of one selected from the group including SiO2, Si3N4, AlN and Si3NxOx.
25. A thin film transistor comprising the substrate according to claim 16.
26. A display comprising the thin film transistor according to claim 25, wherein the thin film transistor is used as a switching device.
27. The substrate of claim 16, wherein the substrate is a silicon on insulation (SOI) substrate.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of decoding optical data signals, comprising:
correcting a received differentially encoded phase-shift keying modulated optical signal by an estimated phase offset,
deriving differentially decoded data values from the corrected signal using an estimation algorithm which
accounts for a differential encoding rule of said differentially encoded phase-shift keying modulated optical signal,
is suitable to maximise a probability with respect to potentially transmitted differentially encoded data symbols or to maximise one or more probabilities with respect to the differentially decoded data values, and
stipulates transition probabilities between first hypothetical states that represent potentially transmitted differentially encoded data symbols assuming that no phase slip has occurred, and towards second hypothetical states that represent potentially transmitted differentially encoded data symbols assuming that a phase slip has occurred,
wherein the transition probabilities from one or more of said first hypothetical states towards one or more of said second hypothetical states are weighted on the basis of a predetermined phase slip probability value.
2. The method according to claim 1,
wherein said estimation algorithm stipulates respective sets of hypothetical states for respective phase rotation angles of a phase-shift keying (PSK) constellation diagram, and
wherein the hypothetical states of each of said sets represent potentially transmitted differentially encoded data symbols for the respective phase rotation angle of the respective set, and
wherein transition probabilities between states of a first set at a first time instance and states of a second set at a second time instance are weighted on a basis of a predetermined phase slip probability value, which is related to a difference of the phase rotation angles of said first set and said second set.
3. The method according to claim 1,
wherein said received optical data signal is further encoded by a forward error correction encoding algorithm, and
wherein said estimation algorithm is suitable to maximise one or more probabilities with respect to the differentially decoded data values,
the method further comprising
deriving from the corrected optical signal probability values that indicate a probability of respective received differentially encoded data symbols,
wherein said estimation algorithm determines from the derived probability values of said respective received differentially encoded data symbols probability values that indicate a probability of respective differentially decoded data values,
the method further comprising
modifying the determined probability values that indicate a probability of respective differentially decoded data values, using a suitable algorithm that accounts for said forward error correction encoding algorithm.
4. The method according to claim 3, further comprising
weighting the stipulated transition probabilities, using the modified probability values that indicate a probability of respective differentially decoded data values.
5. The method according to claim 4, wherein said forward error correction encoding algorithm is a Low Density Parity Check Code.
6. A device for decoding optical data signals, wherein said device is adapted to:
receive a differentially encoded phase-shift keying modulated optical signal,
correct the received differentially encoded phase-shift keying modulated optical signal by an estimated phase offset,
derive differentially decoded data values from the corrected differentially encoded phase-shift keying modulated optical signal using an estimation algorithm which
accounts for a differential encoding rule of said differentially encoded phase-shift keying modulated optical signal,
is suitable to maximise a probability with respect to potentially transmitted differentially encoded data symbols or to maximise one or more probabilities with respect to the differentially decoded data values, and
stipulates transition probabilities between first hypothetical states that represent potentially transmitted differentially encoded data symbols assuming that no phase slip has occurred, and second hypothetical states that represent potentially transmitted differentially encoded data symbols assuming that a phase slip has occurred, wherein the transition probabilities between said first hypothetical states and said second hypothetical states are weighted on the basis of a predetermined phase slip probability value.