1. A lighting display system, comprising:
at least one non-transparent cable for transmitting light;
at least one light emitting diode disposed at a first end of at least a portion of said at least one non-transparent cable;
a light emitting controller having a digital signal processor that signals said at least one light emitting diode to control the intensity of light emanating from said at least one light emitting diode and to control the color of the light resulting from the combination of light from said at least one light emitting diode; and
a receiving structure for receiving a second end of at least a portion of said at least one non-transparent cable, wherein at least a portion of said second end of said at least one non-transparent cable emits light from said at least one light emitting diode;
wherein said structure is incorporated into infrastructure and said system displays at least one design.
2. The system according to claim 1, wherein said at least one design is an advertisement.
3. The system according to claim 1, wherein said at least one design simulates a floor covering when displayed.
4. The system according to claim 3, wherein said floor covering to be simulated is carpeting.
5. The system according to claim 1, wherein said non-transparent cable is a fiber optic cable.
6. The system according to claim 1, wherein said infrastructure is a travelway that supports at least one of vehicular traffic and pedestrian traffic.
7. The system according to claim 1, wherein said light emitting controller includes a central microprocessor that is programmed with said at least one design to be displayed by said lighting display system.
8. The system according to claim 7, wherein said light emitting controller includes a port for receiving data from a communications network thereby permitting said central microprocessor to receive data from a remote location.
9. The system according to claim 8, wherein the communications network is the Internet and said data received by said central microprocessor are transmitted from a computer connected to the Internet.
10. The system according to claim 1, wherein at least three light emitting diodes are disposed at a first end of each non-transparent cable;
wherein light emitted from said at least three light emitting diodes combines to form at least one of a plurality of colors.
11. The system according to claim 1, wherein said receiving structure that receives said second end of said non-transparent cables is at a location remote to said light emitting controller.
12. A lighting display system, comprising:
a plurality of non-transparent cables for transmitting light;
at least one light emitting diode enclosed in a first end of each said non-transparent cable;
a light emitting controller to control the intensity of light emanating from said at least one light emitting diode; and
a receiving structure with apertures arranged in an array for receiving a second end of each said non-transparent cable, wherein said second end of said non-transparent cable emits light from said at least one light emitting diode, the array providing for the display of a plurality of designs by selective light emission from said at least one light emitting diode;
wherein said receiving structure is incorporated into a travelway and said system displays at least one design;
wherein said travelway supports at least one of vehicular traffic and pedestrian traffic.
13. The system according to claim 12, wherein said at least one design is an advertisement.
14. The system according to claim 12, wherein said at least one design simulates a floor covering when displayed.
15. A lighting display system, comprising:
at least one non-transparent cable for transmitting light;
at least one light emitting diode disposed at a first end of at least a portion of said at least one non-transparent cable;
a light emitting controller to control the intensity of light emanating from said at least one light emitting diode, said light emitting controller including a central processor configured to receive data via the Internet thereby permitting said central microprocessor to receive data from a remote location;
a computer communicably coupled to the central processor via the Internet that provides data that controls the light emitting controller; and
a receiving structure for receiving a second end of at least a portion of said at least one non-transparent cable, wherein at least a portion of said second end of said at least one non-transparent cable emits light from said at least one light emitting diode;
wherein said structure is incorporated into infrastructure and said system displays at least one design.
16. The system according to claim 15, wherein said at least one design is an advertisement.
17. The system according to claim 15, further comprising at least three light emitting diodes, each said light emitting diode providing a distinct color, whereby light emitted from said three light emitting diodes combines to emit a single color dependent upon the intensity of the light emitted by each said light emitting diode.
18. The system according to claim 12, wherein said light emitting controller dynamically adjusts the said at least one design.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for surface treatment on a metal oxide, comprising: utilizing plasma to perform a surface treatment on a device to be processed;
wherein the plasma comprises a mixture gas of an F-based gas and O2, and the device to be processed is a metal oxide layer or a manufactured article coated with the metal oxide.
2. The method for surface treatment on a metal oxide according to claim 1, wherein the metal oxide comprises zinc oxide, tin oxide, zinc oxide based metal oxide containing at least one element of indium, aluminum and gallium, or tin oxide-based metal oxide containing at least one element of the indium, aluminum and gallium.
3. The method for surface treatment on a metal oxide according to claim 1, wherein the utilizing plasma to perform a surface treatment on a device to be processed comprises:
filling a chamber, in which the device to be processed is placed, with the mixture gas of an F-based gas and O2 at pressure Y, the O2 content in the mixture gas being r;
utilizing RF at a power P to act on the mixture gas to obtain plasma; and
the time in which the plasma acts on the device to be processed is \u201ct\u201d.
4. The method for surface treatment on a metal oxide according to claim 1, wherein the F-based gas comprises at least one gas of CF4, SF6, NF3 and C2F8.
5. The method for surface treatment on a metal oxide according to claim 4, wherein the F-based gas is CF4;
wherein the O2 content \u03b7 in the mixture gas of CF4 and O2 is in a range of 0-38%;
the pressure Y of the mixture gas of CF4 and O2 is in a range of 40-400 mTorr;
the time \u201ct\u201d in which the plasma acts on the device to be processed is in a range of 5-120 s; and
the power P of the RF is in a range of 200-1500 W.
6. A method for preparing a thin film transistor, comprising: preparing a gate electrode, a gate insulating layer, a channel layer, a blocking layer, a source electrode, a drain electrode and a passivation protective layer on a substrate in order, preparation of the channel layer comprising:
utilizing plasma to perform surface treatment on the channel layer;
the plasma comprises a mixture gas of an F-based gas and O2, wherein the material of the channel layer is a metal oxide.
7. The method for preparing a thin film transistor according to claim 6, wherein the metal oxide comprises: zinc oxide, tin oxide, zinc oxide based metal oxide containing at least one element of indium, aluminum and gallium, or tin oxide-based metal oxide containing at least one element of the indium, aluminum and gallium.
8. The method for preparing a thin film transistor according to claim 6, wherein the utilizing plasma to perform surface treatment on the channel layer comprises:
placing a product, a surface of which is a channel layer, into a chamber filled with a mixture gas of an F-based gas and O2 at pressure Y, the O2 content in the mixture gas being \u03b7; and
utilizing RF at a power P to act on the mixture gas to obtain plasma; and
the time in which the plasma acts on the device to be processed is \u201ct\u201d.
9. The method for preparing a thin film transistor according to claim 6, wherein the channel layer comprises a central region and two contact regions for contacting the source-drain respectively, the two contact regions being on both sides of the central region; and
the blocking layer is deposited in the position of the central region on the channel layer, for blocking the plasma from reaching the central region of the channel layer.
10. The method for preparing a thin film transistor according to claim 6, wherein the F-based gas is CF4;
wherein the O2 content \u03b7 in the mixture gas of CF4 and O2 is in a range of 0-38%;
the pressure Y of the mixture gas of CF4 and O2 is in a range of 40-400 mTorr;
the time \u201ct\u201d in which the plasma acts on the device to be processed is in a range of 5-120 s; and
the power P of the RF is in a range of 200-1500 W.