1. An energy-assisted magnetic recording head comprising:
a main pole; and
a high-frequency magnetic field generating unit that is arranged adjacently to a trailing side of the main pole, wherein
a central line of the high-frequency magnetic field generating unit in a cross-track direction is separated from a central line of the main pole in the cross-track direction when viewed from an air bearing surface, and
a magnetic field vector from the main pole is substantially perpendicularly incident on a film surface of the high-frequency magnetic field generating unit.
2. An energy-assisted magnetic recording head comprising
a main pole; and
a high-frequency magnetic field generating unit that is arranged adjacently to a trailing side of the main pole, wherein
end parts in a cross-track direction on same sides of the main pole and the high-frequency magnetic field generating unit are arranged adjacently to each other when viewed from an air bearing surface, and
a magnetic field vector from the main pole is substantially perpendicularly incident on a film surface of the high-frequency magnetic field generating unit.
3. The energy-assisted magnetic recording head according to claim 1, wherein
a width of the high-frequency magnetic field generating unit in the cross-track direction is 50 nm or less when viewed from the air bearing surface, and
a width of the main pole in the cross-track direction at a side on which the main pole is adjacent to the high-frequency magnetic field generating unit is larger than the width of the high-frequency magnetic field generating unit.
4. The energy-assisted magnetic recording head according to claim 1, wherein
the energy-assisted magnetic recording head includes a side shield arranged in a cross-track direction in the main pole and a trailing shield arranged at a trailing side of the main pole, and
the high-frequency magnetic field generating unit is displaced from a center of the main pole in the cross-track direction toward a direction in which the side shield is arranged, and the trailing shield is not located on the trailing side of the side shield.
5. The energy-assisted magnetic recording head according to claim 4, wherein
the side shield is arranged only on one side of the main pole in the cross-track direction.
6. The energy-assisted magnetic recording head according to claim 1, wherein
the energy-assisted magnetic recording head includes a hard bias layer that is adjacent to the high-frequency magnetic field generating unit in the cross-track direction and applies static magnetic field to the high-frequency magnetic field generating unit.
7. The energy-assisted magnetic recording head according to claim 1, wherein
the high-frequency magnetic field generating unit is formed with a normal line to the film surface being oblique with respect to the central line of the main pole in the cross-track direction viewed from the air bearing surface.
8. An energy-assisted magnetic recording head in a magnetic recording device including a magnetic disk, a disk drive unit that rotationally drives the magnetic disk, the recording head that writes information on the magnetic disk, and a head drive unit that positions the recording head to a desired track on the magnetic disk, wherein
the recording head includes a main pole, and a high-frequency magnetic field generating unit that is arranged adjacently to the trailing side of the main pole,
a central line of the high-frequency magnetic field generating unit in a cross-track direction is separated from a central line of the main pole in the cross-track direction when viewed from an air bearing surface, and
a magnetic field vector from the main pole is substantially perpendicularly incident on a film surface of the high-frequency magnetic field generating unit.
9. An energy-assisted magnetic recording head in a magnetic recording device including a magnetic disk, a disk drive unit that rotationally drives the magnetic disk, a recording head that write information on the magnetic disk, and a head drive unit that positions the recording head to a desired track on the magnetic disk, wherein
the recording head includes a main pole, and a plurality of high-frequency magnetic field generating units that are arranged adjacently to the trailing side of the main pole,
the plurality of high-frequency magnetic field generating units are arranged at symmetrical positions with respect to the central line of the main pole in the cross-track direction when viewed from an air bearing surface,
a magnetic field vector from the main pole is substantially perpendicularly incident on film surfaces of the plurality of high-frequency magnetic field generating units, and
the plurality of high-frequency magnetic field generating units are used in two ways for recording on an inner diameter of the magnetic disk and for recording on an outer diameter of the magnetic disk.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of manufacturing a metal-oxide-semiconductor (MOS) transistor, comprising:
providing a substrate having a gate structure thereon;
forming a sourcedrain extension region in the substrate on each side of the gate structure;
forming a carbon-containing silicon oxide layer over the substrate;
etching back the carbon-containing silicon oxide layer to form a spacer on each sidewall of the gate structure; and
forming a sourcedrain region in the substrate on each side of the spacer-coated gate structure.
2. The method of claim 1, wherein the carbon-containing silicon oxide layer is formed by using gases comprising bis(ter-butylamino)silane (BTBAS).
3. The method of claim 2, wherein the flow rate of BTBAS is set to be a value between about 75 sccm to 110 sccm.
4. The method of claim 1, wherein the carbon-containing silicon oxide layer is formed by using gases comprising hexachlorosilane (HCD).
5. The method of claim 4, wherein the flow rate of HCD is set to be a value between 12 sccm to 20 sccm.
6. The method of claim 1, wherein the carbon-containing silicon oxide layer is formed by using gases comprising HCD and ethylene.
7. The method of claim 6, wherein the flow rate of ethylene is set to be a value between 100 sccm to 1200 sccm.
8. The method of claim 1, further comprising:
after forming the carbon-containing silicon oxide layer, forming a carbon-containing nitride layer on the carbon-containing silicon oxide layer, wherein the carbon-containing silicon oxide layer and the carbon-containing nitride layer are as
a nitrideoxide carbon-containing composite layer.
9. The method of claim 8, wherein the nitrideoxide carbon-containing composite layer is formed by using gases comprising bis(ter-butylamino)silane (BTBAS).
10. The method of claim 9, wherein the flow rate of BTBAS is set to be a value between about 75 sccm to 110 sccm.
11. The method of claim 8, wherein the nitrideoxide carbon-containing composite layer is formed by using gases comprising hexachlorosilane (HCD).
12. The method of claim 11, wherein the flow rate of HCD is set to be a value between 12 sccm to 20 sccm.
13. The method of claim 8, wherein the nitrideoxide carbon-containing composite layer is formed by using gases comprising HCD and ethylene.
14. The method of claim 13, wherein the flow rate of ethylene is set to be a value between 100 sccm to 1200 sccm.