1. A spectroscopic sensor comprising:
(a) a semiconductor substrate;
(b) a first diffusion layer provided on the semiconductor substrate;
(c) a second diffusion layer for taking out electrons captured in the first diffusion layer to the outside, the second diffusion layer being provided at one end of the first diffusion layer;
(d) a first electrode that is connected to the second diffusion layer and that takes out the captured electrons to the outside;
(e) a second electrode that is connected to another end opposing to the second diffusion layer of the first diffusion layer and that establishes an electric potential of the first diffusion layer;
(f) an electrode film provided on the first diffusion layer with an insulating film provided therebetween, the electrode film transmitting incident light and being applied with a gate voltage; and
(g) means that measures wavelength and intensity of the incident light by determining a light intensity (\u03a6) at a depth x from the surface of the first diffusion layer on the basis that the light intensity is exponentially attenuated when light is incident on the first diffusion layer, determining the ratio of the intensity of the intensity of the incident light absorbed to a depth W from the surface of the first diffusion layer in which electrons are captured to the intensity of the incident light absorbed to the whole depth of the diffusion layer, and determining a current generated to the depth W.
2. The spectroscopic sensor according to claim 1, wherein the first diffusion layer comprises a p-type diffusion layer, the second diffusion layer comprises an n+ diffusion layer, and the semiconductor substrate comprises an n-type semiconductor substrate.
3. The spectroscopic sensor according to claims 1, wherein the electrode film being applied with a gate voltage is a polycrystalline silicon film doped with an impurity.
4. A color image sensor without a color filter comprising a spectroscopic sensor array including the spectroscopic sensors according to claim 1 being disposed one dimensionally or two-dimensionally, wherein the spectroscopic sensor array is switched with a shift register formed with the spectroscopic sensor array to read signals, the depth for capturing electrons is varied to measure signals at each time, and the intensities of wavelengths of red, green, and blue are calculated from the signals to output color image signals.
5. The color image sensor without a color filter according to claim 4, further comprising a noise-eliminating circuit provided at an output part of the color image signals.
6. The color image sensor without a color filter according to claim 4, wherein the depth for capturing electrons is varied every 1180 seconds.
7. The spectroscopic sensor according to claim 1, further comprising a mechanism which varies the gate voltage according to the type of the incident light.
8. The spectroscopic sensor according to claim 7, wherein the first diffusion layer comprises a p-type diffusion layer, the second diffusion layer comprises an n+ diffusion layer, and the semiconductor substrate comprises an n-type semiconductor substrate.
9. The spectroscopic sensor according to claim 7, wherein the electrode film being applied with a gate voltage is a polycrystalline silicon film doped with an impurity.
10. A color image sensor without a color filter comprising a spectroscopic sensor array including the spectroscopic sensors according to claim 7 being disposed one dimensionally or two-dimensionally, wherein the spectroscopic sensor array is switched with a shift register formed with the spectroscopic sensor array to read signals, the depth for capturing electrons is varied to measure signals at each time, and the intensities of wavelengths of red, green, and blue are calculated from the signals to output color image signals.
11. A method for measuring incident light employing a semiconductor structure comprising an electrode film transmitting incident light and being applied with a gate voltage; a first diffusion layer for capturing electrons generated by the incident light, the first diffusion layer being disposed under the electrode film with an insulating film provided therebetween; a second diffusion layer for taking out electrons captured in the first diffusion layer to the outside, the second diffusion layer being disposed at one end of the first diffusion layer ; a first electrode that is connected to the second diffusion layer and that takes out the captured electrons to the outside; and a second electrode that is connected to another end opposing to the second diffusion layer disposed in the first diffusion layer and that establishes an electric potential of the first diffusion layer , wherein the gate voltage is varied, the depth from the surface of the first diffusion layer in which electrons are captured is varied on the basis of wavelength and intensity of the incident light, and a current indicating the quantity of the electrons is measured, wherein a light intensity \u03a6 at a depth x from the surface of the first diffusion layer is determined on the basis that the light intensity is exponentially attenuated when light is incident on the first diffusion layer, the ratio of the intensity of the incident light absorbed to a depth W from the surface of the first diffusion layer, in which electrons are captured to the intensity of the incident light absorbed to the whole depth of the diffusion layer is determined, and a current generated to the depth W is determined, thereby measuring wavelength and intensity of the incident light.
12. The method for measuring incident light according to claim 11, wherein the the gate voltage is varied according to the type of the incident light.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
We claim:
1. An apparatus for finely synchronizing code signals with a coded received signal, comprising:
a sampling device for sampling the received signal at regular sampling intervals to obtain sampled received signal pulses;
a pulse shaper for shaping the sampled received signal pulses in order to output a first pulse-shaped sample and a second pulse-shaped sample in dependence on an autocorrelation function;
a buffer for buffering the first pulse-shaped sample and the second pulse-shaped sample to obtain a buffered first pulse-shaped sample and a buffered second pulse-shaped sample;
a code signal generator for generating a code signal;
correlation devices for correlating the code signal with the buffered first pulse-shaped sample and the buffered second pulse-shaped sample to form two correlation values; and
an interpolation device for forming an interpolation value as a function of the buffered first pulse-shaped sample and the buffered second pulse-shaped sample and as a function of a deviation between the two correlation values.
2. The apparatus according to claim 1, wherein said correlation devices are multipliers.
3. The apparatus according to claim 2, wherein said code signal generator generates a decryption code.
4. The apparatus according to claim 1, wherein said code signal generator generates a despreading code.
5. The apparatus according to claim 1, comprising: integrators respectively connected downstream from said correlation devices.
6. The apparatus according to claim 1, comprising: a subtractor for subtracting the two correlation values in order to obtain the deviation between the two correlation values.
7. The apparatus according to claim 6, comprising: a digital FIR loop filter connected downstream from said subtractor.
8. The apparatus according to claim 1, wherein said sampling device samples the received signal at a sampling interval that is half of a chip duration TC.
9. The apparatus according to claim 1, wherein said interpolation device is a linear TVI interpolator.
10. The apparatus according to claim 1, wherein said interpolation device is a quadratic TVI interpolator.
11. The apparatus according to claim 1, wherein said interpolation device has a deviation factor calculating unit for calculating a deviation factor N as a function of a deviation signal .
12. The apparatus according to claim 11, wherein said interpolation device calculates the interpolation value from the buffered first pulse-shaped sample s(t), the buffered second pulse-shaped sample s(t), and the deviation factor N using equation:
3
s
^
(
t
)
=
N
x
s
(
t
+
)
–
s
(
t
–
)
4
+
s
(
t
–
)
,
where is a chip duration TC, divided by 4.
13. The apparatus according to claim 1, wherein said pulse shaper is an RRC filter.
14. The apparatus according claim 1, wherein said pulse shaper has an autocorrelation function in accordance with:
4
g
g
(
t
)
=
cos
(
r
t
T
c
)
1
–
(
2
t
T
c
)
2
sin
c
(
t
T
c
)
,
0
r
1
,
where TC is a chip duration.
15. The apparatus according to claim 1, wherein said code signal generator generates a decryption code.