1. A sheet identifying device which enables judgment of authentication utilizing a microprint formed on a sheet, the microprint being constituted by forming a number of thin lines in a unit width in order to prevent counterfeit, comprising:
a reader for reading a sheet in pixels, a respective one of which includes color information having brightness, a predetermined size of which is defined as one unit;
a storage section for storing image data made up of the plurality of pixels read by means of the reader;
an increasingdecreasing section for acquiring coarsened moir\xe9 fringes of the thin lines adjacent on the sheet by increasing or decreasing the number of pixels in the image data; and
a sheet identifying section for identifying authentication of the sheet, based upon moir\xe9 data has the acquired moir\xe9 fringes among of the image data increaseddecreased by means of the increasingdecreasing section.
2. The sheet identifying device according to claim 1, wherein the number of pixels is increaseddecreased by means of the increasingdecreasing section at a ratio different from another one in a sheet acquisition direction and in a direction orthogonal thereto.
3. The sheet identifying device according to claim 1, comprising a parameter setting section for setting an increasingdecreasing ratio so that increasingdecreasing the number of pixels by means of the increasingdecreasing section is executed at a predetermined increasingdecreasing ratio in the sheet acquisition direction and in the direction orthogonal thereto.
4. The sheet identifying device according to claim 1, the increasingdecreasing section configured to increasingdecreasing a number of pixels in the image data to increase a gap for reading a pixel to be at least as large as a gap between adjacent lines on the sheet.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of forming a beam within a sealed cavity, the method comprising:
depositing a lower insulator layer comprising one or more layers;
depositing an upper insulator layer over the first insulator layer, the upper insulator layer comprising one or more layers, wherein a composite stress of the upper insulator layer is different than a composite stress of the lower insulator layer;
forming a first conductor layer below the lower insulator layer and a second conductor layer above the upper insulator layer, wherein each conductor layer comprises one or more metal layers; and
forming a stabilizing insulator layer between at least one of: the upper insulator layer and the second conductor or the first conductor and the lower insulator layer, wherein the at least one of the upper insulator layer or the lower insulator layer includes an unstable stress when exposed to ambient.
2. The method of claim 1, wherein the composite stress of the upper insulator layer is more tensile or less compressive than the composite stress of the lower insulator layer, such that the beam bends downward.
3. The method of claim 1, wherein the composite stress of the lower insulator layer is more tensile or less compressive than the composite stress of the upper insulator layer, such that the beam bends upward.
4. The method of claim 1, further comprising forming a conductive via through the upper insulator layer and the lower insulator layer, wherein the conductive via electrically connects the upper conductor layer and the lower conductor layer.
5. The method of claim 1, wherein the stabilizing insulator layer includes a stable compressive stress.
6. The method of claim 1, wherein the lower insulator layer, the upper insulator layer, and the stabilizing insulator layer include silicon dioxide.
7. The method of claim 1, wherein the stabilizing insulator layer is at least approximately 50 nanometers thick.
8. A method of forming a beam within a sealed cavity, the method comprising:
depositing a first stabilizing insulator layer;
depositing an insulator layer above the first stabilizing insulator layer, the insulator layer including an unstable stress when exposed to ambient; and
depositing a second stabilizing insulator layer above the insulator layer, wherein the first stabilizing insulator layer and the second stabilizing insulator layer include a stable stress when exposed to ambient.
9. The method of claim 8, wherein at least one of: the first stabilizing insulator layer, the insulator layer, or the second stabilizing insulator layers include one or more layers.
10. The method of claim 8, further comprising forming a first conductor layer below the first stabilizing insulator layer and a second conductor layer above the second stabilizing insulator layer, wherein each conductor layer comprises one or more metal layers.
11. The method of claim 8, wherein the first stabilizing insulator layer and the second stabilizing insulator layer include a stable compressive stress.
12. The method of claim 8, wherein the first stabilizing insulator layer, the insulator layer, and the second stabilizing insulator layer include silicon dioxide.
13. The method of claim 8, wherein depositing the first stabilizing insulator layer and the second stabilizing insulator layer includes using a TEOS-based plasma enhanced chemical vapor deposition (PECVD) process.
14. The method of claim 8, wherein depositing the insulator layer includes using a silane-based plasma enhanced chemical vapor deposition (PECVD) process.
15. The method of claim 8, wherein the first stabilizing insulator layer and the second stabilizing insulator layer are at least approximately 50 nanometers thick.
16. The method of claim 10, further comprising forming a conductive via through the insulator layer, wherein the conductive via electrically connects the upper conductor layer and the lower conductor layer.
17. The method of claim 11, wherein the insulator layer includes an unstable tensile stress.
18. A method of forming a beam within a sealed cavity, the method comprising:
forming a lower conductor layer comprising one or more metal layers;
depositing an insulator layer above the lower conductor layer; and
forming an upper conductor layer above the insulator layer, the upper conductor layer comprising one or more metal layers, wherein at least one of: a stress, a thickness, or a pattern factor of the upper conductor layer is different than a stress, a thickness, or a pattern factor of the lower conductor layer.
19. The method of claim 18, further comprising forming a conductive via through the insulator layer, wherein the conductive via electrically connects the upper conductor layer and the lower conductor layer.
20. The method of claim 18, wherein the stress of the upper conductor layer is more tensile or less compressive than the stress of the lower conductor layer, such that the beam bends downward.
21. The method of claim 18, wherein the stress of the upper conductor layer is less tensile or more compressive than the stress of the lower conductor layer, such that the beam bends upward.
22. The method of claim 18, wherein the insulator layer includes silicon dioxide.