1. A handle with asymmetrical configuration, the handle having a grip section and a neck section connected with a top end of the grip section; the handle includes:
multiple grip regions adapted to be pressed by a user’s thumb, being disposed on a circumference of the grip section at intervals; and
multiple abutment regions adapted to be pressed by a user’s palm, being disposed on a circumference of the neck section at intervals; wherein:
there is an odd number of grip regions and there is an even number of abutment regions, the difference between the number of the grip regions and the number of the abutment regions being one, the grip regions and the abutment regions being asymmetrically arranged, whereby the handle provides many different holding ranges.
2. The handle as claimed in claim 1, wherein the number of the grip regions is three, while the number of the abutment regions is four.
3. The handle as claimed in claim 1, wherein the number of the grip regions is five, while the number of the abutment regions is four.
4. The handle as claimed in claim 1, wherein each the abutment region is a recess.
5. The handle as claimed in claim 1, wherein each of the grip regions andor each of the abutment regions has a surface softer than that of the remaining portion of the handle.
6. The handle as claimed in claim 1, wherein each the abutment region has a surface flush with the surface of the neck section.
7. A handle with asymmetrical configuration, the handle having a grip section and a neck section connected with a top end of the grip section; the handle includes:
multiple grip regions adapted to be pressed by a user’s thumb, being disposed on a circumference of the grip section at intervals; and
multiple abutment regions adapted to be pressed by a user’s palm, being disposed on a circumference of the neck section at intervals; wherein:
there is an even number of grip regions and there is an odd number of abutment regions, the difference between the number of the grip regions and the number of the abutment regions being one, the grip regions and the abutment regions being asymmetrically arranged.
8. The handle as claimed in claim 7, wherein the number of the grip regions is four, while the number of the abutment regions is three.
9. The handle as claimed in claim 7, wherein the number of the grip regions is four, while the number of the abutment regions is five.
10. The handle as claimed in claim 7, wherein each the abutment region is a recess.
11. The handle as claimed in claim 1, wherein each of the grip regions andor each of the abutment regions has a surface softer than that of the remaining portion of the handle.
12. The handle as claimed in claim 7, wherein each the abutment region has a surface flush with the surface of the neck section.
13. A handle with asymmetrical configuration, the handle having a grip section and a neck section connected with a top end of the grip section; the handle includes:
multiple grip regions adapted to be pressed by a user’s thumb, being disposed on a circumference of the grip section at intervals; and
multiple abutment regions adapted to be pressed by a user’s palm, being disposed on a circumference of the neck section at intervals; wherein:
there is an odd number of grip regions and there is an odd number of abutment regions, the difference between the number of the grip regions and the number of the abutment regions being two, the grip regions and the abutment regions being asymmetrically arranged.
14. The handle as claimed in claim 13, wherein the number of the grip regions is three, while the number of the abutment regions is five.
15. The handle as claimed in claim 13, wherein the number of the grip regions is five, while the number of the abutment regions is three.
16. The handle as claimed in claim 13, wherein each abutment region is a recess.
17. The handle as claimed in claim 1, wherein each of the grip regions andor each of the abutment regions has a surface softer than that of the remaining portion of the handle.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for forming a metal silicide layer, comprising:
provding a silicon layer;
introducing ions in the silicon layer to form a barrier layer in the silicon layer;
forming a metal layer on the silicon layer;
performing an annealing process so that the silicon layer reacts with the metal layer to form the metal silicide layer; and
removing the unreacted metal layer.
2. The method of claim 1, wherein the ions comprises inert ions or nitrogen ions.
3. The method of claim 2, wherein the inert ions includes argon ions.
4. The method of claim 1, wherein a material of the metal is selected from a group consisting of tungsten, molybdenum, cobalt and titanium.
5. The method of claim 1, wherein the step of introducing ions in the silicon layer is performed by an ion implantation process.
6. A method of forming semiconductor device, comprising:
forming a gate structure on a substrate, wherein the gate structure comprised a silicon layer;
forming a sourcedrain region beside the gate structure;
forming a spacer on the side wall on the gate structure;
introducing ions into the silicon layer and the sourcedrain to form a barrier layer in the silicon layer and the sourcedrain;
forming a metal on the substrate;
performing an annealing process so that the silicon layer and the sourcedrain react with the metal layer to form a metal silicide layer; and
removing the unreacted metal layer.
7. The method of claim 1, wherein the ions comprises inert ions or nitrogen ions.
8. The method of claim 7, wherein the inert ions includes argon ions.
9. The method of claim 8, wherein a material of the metal is selected from a group consisting of tungsten, molybdenum, cobalt and titanium.
10. The method of claim 7, wherein the step of introducing ions in the silicon layer is performed by an ion implantation process.
11. A metal silicide structure, comprising:
a first metal silicide layer;
a second metal silicide layer, wherein the grain distribution of the first metal silicide layer is more uniform than that of the second metal silicide; and
a barrier layer between the first metal silicide layer and the second metal silicide layer, wherein the barrier layer comprises ions.
12. The structure of claim 11, wherein the ions comprises inert ions or nitrogen ions.
13. The structure of claim 12, wherein the inert ions includes argon ions.
14. The structure of claim 11, wherein a material of the metal is selected from a group consisting of tungsten, molybdenum, cobalt and titanium.