1. An optical deflector element comprising:
a light incoming surface into which enters a light emitted from a light-emitting face of a light guide having a light-incident face into which a light emitted from a primary light source enters; and
a light outgoing surface which is positioned on a side opposite to the light incoming surface and from which the light is emitted,
wherein plural elongated prisms are arrayed in parallel with each other on the light incoming surface, and each of the elongated prisms is constituted by a top end flat face having an inclination angle of 1 to 50 degrees and positioned at a top end part of the elongated prism, a first prism face positioned on one side of the top end flat face, and a second prism face positioned on another side of the top end flat face,
wherein the first prism face is a flat face and the second prism face is a curve face.
2. The optical deflector element as set forth in claim 1, wherein the top end flat face has a size of 0.008P to 0.088P in a cross section perpendicular to an elongated direction of the elongated prism where P is pitch of the elongated prism.
3. The optical deflector element as set forth in claim 1, wherein at least one of the first and second prism faces is constituted by a convex curve face.
4. The optical deflector element as set forth in claim 3, wherein the convex curve face has a cross-section perpendicular to the elongated direction of the elongated prism, the cross-section having an arc-like shape.
5. The optical deflector element as set forth in claim 4, wherein a ratio rP of a curvature radius r of the convex curve face to the pitch P of the elongated prisms is 2 to 50.
6. The optical deflector element as set forth in claim 3, wherein the prism face constituted by the convex curve face has a ratio dP of a maximum distance d between the prism face and a virtual plane connecting a top edge and a bottom edge to the pitch P of the elongated prisms, the ratio dP being 0.1 to 5%.
7. The optical deflector element as set forth in claim 1, wherein at least one of the first and second prism faces is constituted by plural faces, and each of the plural faces is constituted by a flat face or convex curve face.
8. The optical deflector element as set forth in claim 7, wherein the plural faces include a flat face adjacent to the top end flat face, and a convex curve face adjacent to the flat face.
9. The optical deflector element as set forth in claim 8, wherein the convex curve face has a cross-section perpendicular to the elongated direction of the elongated prism, the cross-section having an arc-like shape.
10. The optical deflector element as set forth in claim 9, wherein a ratio rP of a curvature radius r of the convex curve face to the pitch P of the elongated prisms is 2 to 50.
11. The optical deflector element as set forth in claim 7, wherein any of the first and second prism faces that is constituted by plural faces has a ratio dP of a maximum distance d between the prism face and a virtual plane connecting a top edge and a bottom edge to the pitch P of the elongated prisms, the ratio dP being 0.1 to 5%.
12. A light source device comprising:
a primary light source;
a light guide having a light-incident face into which light emitted from the primary light source enters, and a light-emitting face from which guided light is emitted; and
the optical deflector element as set forth in any one of claims 1 to 11 provided adjacent to the light guide on a side of the light-emitting face thereof.
13. The light source device as set forth in claim 12, wherein an inclination angle of the top end flat face of the optical deflector element is an angle at which peak light in light emitted from the light-emitting face of the light guide does not enter into the optical deflector element through the top end flat face of the optical deflector element.
14. The light source device as set forth in claim 13, wherein the peak light is emitted from the light-emitting face in a direction at an angle of 10\xb0 to 40\xb0 with respect to the light-emitting face.
15. The light source device as set forth in claim 12, wherein the first prism face of the elongated prism is positioned closer to the primary light source than the second prism face, the first prism face is constituted by a flat face, the second prism face is constituted by a convex curve face or plural faces, and each of the plural faces is constituted by a flat face or a convex curve face.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An image sensor, comprising:
a gate structure on a semiconductor layer of a first conductive type;
a first impurity region of the first conductive type aligned with one side of the gate structure and extending to a first depth from a surface portion of the semiconductor layer;
a first spacer formed on each sidewall of the gate structure;
a second impurity region of the first conductive type, aligned with the first spacer and extending to a second depth that is larger than the first depth from the surface portion of the semiconductor layer;
a second spacer formed on each sidewall of the first spacer;
a third impurity region of the first conductive type aligned with the second spacer and extending to a third depth that is larger than the second depth from the surface portion of the semiconductor layer; and
a fourth impurity region of a second conductive type beneath the third impurity region.
2. The image sensor of claim 1, wherein the second spacer has a thickness ranging from approximately 500 \u212b to approximately 1,000 \u212b.
3. The image sensor of claim 1, wherein the first spacer and the second spacer include one of an oxide-based material and a nitride-based material.
4. The image sensor of claim 1, further including a floating diffusion region of the second conductive type aligned with the other side of the gate structure and extending to a predetermined depth from another surface portion of the semiconductor layer.
5. The image sensor of claim 1, wherein the semiconductor layer includes:
a highly-doped first conductive type substrate; and
a first conductive type epi layer formed on the highly-doped first conductive type substrate.
6. An image sensor, comprising:
a gate structure on a semiconductor layer of a first conductive type;
a first impurity region of the first conductive type aligned with one side of the gate structure and extending to a first depth from a surface portion of the semiconductor layer;
a spacer formed on each sidewall of the gate structure;
a second impurity region of the first conductive type aligned with the spacer and extending to a second depth that is larger than the first depth from the surface portion of the semiconductor layer;
a screening insulation layer formed over the spacer and the semiconductor layer;
a third impurity region of the first conductive type aligned with an upper structure where the spacer is overlaid with the screening insulation layer and extending to a third depth that is larger than the second depth from the surface portion of the semiconductor layer; and
a fourth impurity region of a second conductive type beneath the third impurity region.
7. The image sensor of claim 6, wherein the spacer includes one of an oxide-based material and a nitride-based material and the screening insulation layer includes an oxide-based material.
8. The image sensor of claim 6, further including a floating diffusion region of the second conductive type aligned with the other side of the gate structure and extending to a predetermined depth from another surface portion of the semiconductor layer.
9. The image sensor of claim 6, wherein the semiconductor layer includes a highly doped first conductive type substrate and a first conductive type epi layer on the highly doped first conductive type substrate.
10. The image sensor of claim 6, wherein the screening insulation layer has a thickness ranging from approximately 500 \u212b to approximately 1,000 \u212b.