1. A hanging device comprising:
a grabber component, the grabber component having a first width and a second width, the first width being less than an inside dimension between two flanges of a stud, the second width being greater than the inside dimension between the two flanges of the stud, the grabber component being rotatable between the two flanges so as to be removably securable to the stud.
2. The hanging device of claim 1, further comprising a securement device attached to the grabber component.
3. The hanging device of claim 2, wherein the securement device is removably attachable to the grabber component.
4. The hanging device of claim 2, wherein the securement device is a hook. 5, The hanging device of claim 2, wherein the securement device is a table, a clip board, or a tool container.
6. The hanging device of claim 1, wherein the grabber component has a shape of the letter \u2018L.\u2019
7. The hanging device of claim 1, further comprising an attachment structure.
8. The hanging device of claim 7, wherein the attachment structure is removably attachable to the grabber component.
9. The hanging device of claim 7, wherein the attachment structure comprises a bolt, a clamp, a screw, a pin, or a peg.
10. The hanging device of claim 7, wherein the attachment structure is removably attachable to a securement device.
11. The hanging device of claim 7, wherein the attachment structure is removably attachable to a tool or machine.
12. The hanging device of claim 11, wherein the tool or machine is a light, a computer, a radio, a phone, or a camera.
13. The hanging device of claim 1, wherein the first width is from about 2.5 inches to about 3.5 inches.
14. The hanging device of claim 1, wherein the second width is from about 3 inches to about 4.5 inches.
15. The hanging device of claim 1, wherein the grabber component is an injection molded polymeric material.
16. A method for hanging or supporting a tool or machine, the method comprising:
locating a grabber component of a hanging device between a first flange and a second flange of a stud, the grabber component having a first width and a second width, the first width being less than an inside dimension between the first and second flanges, the second width being greater than the inside dimension between the first and second flanges;
rotating the grabber component such that the second width becomes wedged between the first and second flanges and is held between the first and second flanges with a friction hold;
hanging or supporting a tool or machine on the hanging device.
17. The method of claim 16, the hanging device further comprising a securement device.
18. The method of claim 17, wherein the securement device is a hook, the method including hanging a tool on the hook.
19. The method of claim 18, wherein the tool is an electrical cord.
20. The method of claim 19, wherein the tool is an extension cord.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for fabricating and encapsulating a suspended microstructure onto a substrate at least comprising:
depositing a first sacrificial carbon film onto the substrate;
partially protecting the first sacrificial carbon film by a photolithographically defined first photoresist;
photolithographically patterning the first sacrificial carbon film by using oxygen plasma ashing or nitrogen plasma ashing process;
selectively stripping the first photoresist by wet chemical photoresist stripping process;
depositing a structural film;
photolithographically patterning the structural film with a lithographically defined second photoresist and partially exposing the first sacrificial carbon film;
depositing a second sacrificial carbon film;
partially protecting the second sacrificial carbon film by a photolithographically defined third photoresist;
photolithographically patterning the second sacrificial carbon film by using oxygen plasma ashing or nitrogen plasma ashing process;
selectively stripping the third photoresist by wet chemical photoresist stripping process;
depositing an encapsulating film covering the second sacrificial carbon film, the structural film and the first sacrificial carbon film;
photolithographically patterning the encapsulating film to form a plurality of thru-film sacrificial release holes;
selectively removing the first sacrificial carbon film and the second sacrificial carbon film by using a selective gaseous etch process in a reactor chamber so that the structural film is suspended in a cavity above the substrate; and
depositing a hole-sealing film so that the thru-film sacrificial release holes are sealed;
wherein the first sacrificial carbon film and the second sacrificial carbon film are deposited by:
placing the substrate in a reactor chamber;
introducing a carbon-containing process gas into the chamber and introducing a layer-enhancing additive gas that enhances thermal properties of the first sacrificial carbon film and the second sacrificial carbon film;
generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the substrate by coupling a plasma RF source power to an external portion of the reentrant path; and
coupling RF plasma bias power or bias voltage to the substrate.
2. The method according to claim 1 wherein the selective gaseous etch process uses oxygen in a reactor chamber containing plasma generated with a plasma source power.
3. The method according to claim 1 wherein the selective etch gaseous etch process uses nitrogen in the reactor chamber containing plasma generated with a plasma source power.
4. The method according to claim 1 wherein the first sacrificial carbon film and the second sacrificial carbon film comprise less than 9 percent of hydrogen.
5. The method according to claim 1 wherein the substrate comprises layers selected from among solid state semiconductor, dielectric and conductor materials.
6. The method according to claim 1 wherein the structural film comprises layers selected from the group consisting of polycrystalline silicon, amorphous silicon, single-crystal silicon, silicon oxide, silicon nitride, silicon carbide, organosilicate glass, tungsten, tungsten nitride, tungsten carbide, elemental aluminum and aluminum alloys, aluminum oxide, aluminum nitride, aluminum carbide, elemental tantalum and tantalum alloys, tantalum oxide, elemental titanium and titanium alloys, titanium nitride, titanium oxide, elemental copper and copper alloys, copper oxide, vanadium and vanadium oxide, elemental hafnium and hafnium alloys, hafnium oxide, elemental cobalt and cobalt alloys, elemental nickel and nickel alloys, elemental silver and silver alloys, elemental platinum and platinum alloys, elemental gold and gold alloys.
7. The method according to claim 1 wherein the encapsulating film comprises layers selected from the group consisting of polycrystalline silicon, amorphous silicon, single-crystal silicon, silicon oxide, silicon nitride, silicon carbide, organosilicate glass, tungsten, tungsten nitride, tungsten carbide, elemental aluminum and aluminum alloys, aluminum oxide, aluminum nitride, aluminum carbide, elemental tantalum and tantalum alloys, tantalum oxide, elemental titanium and titanium alloys, titanium nitride, titanium oxide, elemental copper and copper alloys, copper oxide, vanadium and vanadium oxide, elemental hafnium and hafnium alloys, hafnium oxide, elemental cobalt and cobalt alloys, elemental nickel and nickel alloys, elemental silver and silver alloys, elemental platinum and platinum alloys, elemental gold and gold alloys.
8. The method according to claim 1 wherein the hole-sealing film comprises layers selected from the group consisting of polycrystalline silicon, amorphous silicon, single-crystal silicon, silicon dioxide, silicon nitride, silicon carbide, organosilicate glass, tungsten, tungsten nitride, tungsten carbide, elemental aluminum and aluminum alloys, aluminum oxide, aluminum nitride, aluminum carbide, elemental tantalum and tantalum alloys, tantalum oxide, elemental titanium and titanium alloys, titanium nitride, titanium oxide, elemental copper and copper alloys, copper oxide, vanadium and vanadium oxide, elemental hafnium and hafnium alloys, hafnium oxide, elemental cobalt and cobalt alloys, elemental nickel and nickel alloys, elemental silver and silver alloys, elemental platinum and platinum alloys, elemental gold and gold alloys.
9. The method according to claim 1 wherein the thru-film sacrificial release holes exhibits a relatively high aspect ratio of at least 1 to 1.
10. The method according to claim 1 wherein said depositing the hole-sealing film is done by a physical vapor deposition process using a target plate inside a deposition chamber.
11. The method according to claim 10 wherein said physical vapor deposition process employs a sputtering deposition process.
12. The method according to claim 11 wherein the sputtering deposition process uses gaseous argon so that the cavity contains gaseous argon and the thru-film sacrificial release holes are sealed.
13. The method according to claim 10 wherein said physical vapor deposition process employs an evaporation deposition process.
14. The method according to claim 10 wherein the target plate forms a slant angle with the substrate in the deposition chamber.
15. The method according to claim 14, wherein the slant angle is from 0 degree to 30 degree.
16. The method according to claim 1 wherein said depositing the hole-sealing film is done by a chemical vapor deposition process inside a deposition chamber.