1460720205-0eef0327-363f-40ee-9fe6-168b838e7741

1. A method for creating a topic in an online learning environment, the method comprising:
executing an application that allows access to an online learning environment, the application executed at a computing device associated with a user;
retrieving a content item from a plurality of content items stored in a library, each content item of the plurality of content items associated with a respective topic, wherein the content item is retrieved in response to user input;
receiving descriptive information, the descriptive information inputted by the user at an interface of the computing device associated with the user, wherein the descriptive information is associated with the retrieved content item;
creating a topic for discussion including the retrieved content item and descriptive information, wherein the topic for discussion is a self-contained learning unit extensible to a plurality of participants accessing the online learning environment.
2. The method of claim 1, wherein the content item is retrieved based on a search of the library, and wherein the user input includes search criteria.
3. The method of claim 1, wherein the plurality of content items is sorted in the library based on the associated topics.
4. The method of claim 1, wherein the each content item of the plurality of content items is embedded with one or more searchable tags.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A semiconductor device comprising:
a semiconductor substrate;
a lower electrode formed above said semiconductor substrate;
a ferroelectric film formed on said lower electrode; and
an upper electrode formed on said ferroelectric film, said upper electrode including a conductive oxide film that is crystallized when formed at a lowest layer of said upper electrode, and a conductive film formed on said conductive oxide film,
wherein an orientation intensity to a (200) plane is higher than an orientation intensity to a (110) plane in said conductive oxide film, and
wherein an average diameter of grains in said conductive oxide film is smaller than that in said conductive film.
2. The semiconductor device according to claim 1, wherein said conductive oxide film is an iridium oxide film.
3. The semiconductor device according to claim 1, wherein said conductive film includes columnar crystals formed on said conductive oxide film.