1. A display apparatus, comprising:
a display panel including a first substrate, a second substrate, and a touch sensor switch incorporated therein, the second substrate being opposed to the first substrate at an interval, the touch sensor switch being disposed in a display area that displays an image,
wherein the touch sensor switch includes
a first touch electrode provided on a surface of the first substrate, the surface being opposed to the second substrate, and
a second touch electrode provided on a surface of the second substrate, the surface being opposed to the first substrate, the first touch electrode and the second touch electrode having an interval therebetween,
wherein the touch sensor switch has a structure in which the first touch electrode and the second touch electrode are brought into contact with each other when the display panel is deformed by an external pressure,
wherein the first substrate includes a convex portion that protrudes in a convex shape toward the second substrate, the convex portion being formed on the surface opposed to the second substrate,
wherein the convex portion has a top surface opposed to the second substrate and includes a flat area formed on the top surface along the surface of the second substrate, and
wherein the first touch electrode is formed in the flat area on the convex portion as an isolated pattern.
2. The display apparatus according to claim 1,
wherein the second touch electrode includes a plurality of second touch electrodes, and
wherein the touch sensor switch is formed so that when the display panel is deformed by the external pressure, the first touch electrode is brought into contact with the two or more second touch electrodes to electrically connect the two or more second touch electrodes with each other.
3. The display apparatus according to claim 1,
wherein the convex portion is formed in a forward tapered shape, and a tapered angle is set to 70 degrees or less.
4. The display apparatus according to claim 3,
wherein the convex potion is formed so that a Young’s modulus is set to 1 to 5 GPa, and a Poisson’s ratio is set to 0.36 to 0.40.
5. The display apparatus according to claim 1,
wherein the first substrate includes a suspended column portion that is protruded in a convex shape toward the second substrate, the suspended column portion being formed on the surface opposed to the second substrate.
6. The display apparatus according to claim 1,
wherein the display panel is a liquid crystal panel including a liquid crystal layer provided between the first substrate and the second substrate.
7. An information input apparatus, comprising:
a touch panel including a first substrate, a second substrate, and a touch sensor switch formed therein, the second substrate being opposed to the first substrate at an interval,
wherein the touch sensor switch includes
a first touch electrode provided on a surface of the first substrate, the surface being opposed to the second substrate, and
a second touch electrode provided on a surface of the second substrate, the surface being opposed to the first substrate, the first touch electrode and the second touch electrode having an interval therebetween,
wherein the touch sensor switch has a structure in which the first touch electrode and the second touch electrode are brought into contact with each other when the touch panel is deformed by an external pressure,
wherein the first substrate includes a convex portion that protrudes in a convex shape toward the second substrate, the convex portion being formed on the surface opposed to the second substrate,
wherein the convex portion has a top surface opposed to the second substrate and includes a flat area formed on the top surface along the surface of the second substrate, and
wherein the first touch electrode is formed in the flat area on the convex portion as an isolated pattern.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of manufacturing a group III nitride single crystal, the method comprising:
an underlying film formation step of forming an underlying film comprising a group III nitride on a substrate by vapor phase deposition;
an etching step of heating the substrate and the underlying film in the presence of hydrogen to remove the underlying film so that a surface of the substrate is roughened;
a seed crystal film formation step of forming a seed crystal film comprising a group III nitride single crystal on the surface of the substrate by vapor phase deposition; and
a single crystal growth step of growing a group III nitride single crystal on the seed crystal film by a flux method.
2. The method of claim 1, wherein voids are formed between the substrate and the seed crystal film during the seed crystal film formation step.
3. The method of claim 1, wherein the group III nitride comprising one or more nitride of a metal selected from the group consisting of gallium, aluminum and indium.
4. The method of claim 1, wherein the group III nitride single crystal grown by the flux method is separated from the substrate to obtain a self-standing substrate.
5. The method of claim 3, wherein flux melt used in the flux method comprises sodium and wherein the group III nitride single crystal comprises gallium nitride.
6. The method of claim 1, wherein the underlying film formation step and the etching step are alternately performed more than once.
7. The method of claim 2, wherein the group III nitride comprising one or more nitride of a metal selected from the group consisting of gallium, aluminum and indium.
8. The method of claim 2, wherein the group III nitride single crystal grown by the flux method is separated from the substrate to obtain a self-standing substrate.
9. The method of claim 3, wherein the group III nitride single crystal grown by the flux method is separated from the substrate to obtain a self-standing substrate.
10. The method of claim 4, wherein flux melt used in the flux method comprises sodium and wherein the group III nitride single crystal comprises gallium nitride.
11. The method of claim 2, wherein the underlying film formation step and the etching step are alternately performed more than once.
12. The method of claim 3, wherein the underlying film formation step and the etching step are alternately performed more than once.
13. The method of claim 4, wherein the underlying film formation step and the etching step are alternately performed more than once.
14. The method of claim 5, wherein the underlying film formation step and the etching step are alternately performed more than once.