1. A method of manufacturing a semiconductor device, the method comprising:
forming a first metal interconnection layer and an insulating film in succession on a semiconductor substrate;
forming a rectangular pattern to be used as an alignment mark on said insulating film;
forming an interlayer insulating film over the entire surface;
forming a mark hole in said interlayer insulating film to expose top and side surfaces of said rectangular pattern;
after the forming the mark hole, removing said insulating film by using the rectangular pattern as a mask to expose a surface of said first metal interconnection layer;
forming a second metal interconnection layer over the entire surface; and
forming an etching mask pattern on said second metal interconnection layer by using said rectangular pattern and said insulating film formed thereunder as the alignment mark.
2. The method of manufacturing a semiconductor device according to claim 1, further comprising:
planarizing said interlayer insulating film to produce a planarized interlayer insulating film before forming the mark hole in the interlayer insulating film, the mark hole being formed in the planarized interlayer insulating film.
3. The method of manufacturing a semiconductor device according to claim 1, wherein said etching mask pattern comprises a photoresist pattern.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for charging a super capacitor bank, the method comprising:
determining a desired charge voltage for the super capacitor bank;
providing a charging current to the super capacitor bank;
limiting the charging current according to a corresponding worst case temperature within the super capacitor bank operating temperature range;
limiting the charge voltage according to the worst case temperature within the super capacitor bank operating temperature range; and
turning off the charging current upon a determination that the super capacitor bank has been charged to the desired charge voltage.
2. The method of claim 1, further comprising turning on the charging current upon a determination that the super capacitor bank charge voltage has dropped a specified percentage below the desired charge voltage.
3. The method of claim 1, further comprising:
maintaining the charging current below a specified maximum charging current for the super capacitor bank; and
limiting a charge time below a corresponding maximum allowable charge time for the super capacitor bank.
4. The method of claim 1, further comprising maintaining the charging current at a constant value.
5. The method of claim 1, wherein energy capacity and voltage rating of the super capacitor bank are configured to store energy sufficient for a specified application.
6. A method for charging a super capacitor bank, the method comprising:
determining a charging current limit for the super capacitor bank, wherein the charging current limit is the maximum charging current for the super capacitor bank at worst case temperature within the super capacitor bank operating temperature range;
determining a charging voltage limit for the super capacitor bank, wherein the charging voltage limit is the maximum voltage for the super capacitor bank at worst case temperature within the super capacitor bank operating temperature range;
providing a charging current to the super capacitor bank, wherein the charging current is less than the charging current limit;
maintaining the charging voltage below the charging voltage limit; and
turning off the charging current upon determining that the super capacitor bank has charged to a specified charge voltage.
7. The method of claim 6, further comprising turning on the charging current upon a determination that the super capacitor bank charge voltage has dropped a specified percentage below the specified charge voltage.
8. The method of claim 6, further comprising limiting a charge time for the charging current, wherein the limited charge time is below a corresponding maximum allowable charge time for the super capacitor bank.
9. The method of claim 6, further comprising maintaining the charging current at a constant value.
10. The method of claim 6, wherein energy capacity and voltage rating of the super capacitor bank are configured to store energy sufficient for a specified application.
11. A method for charging a super capacitor bank, the method comprising:
providing a regulated voltage, wherein the regulated voltage is the maximum voltage for the super capacitor bank at worst case temperature within the super capacitor bank operating temperature range;
providing a charging current to the super capacitor bank; and
limiting the charging current below a specified maximum charging current, wherein the maximum charging current is specified for the super capacitor bank according to worst case temperature within the super capacitor bank operating temperature range.
12. The method of claim 11, further comprising limiting a charge time for the charging current, wherein the limited charge time is below a corresponding maximum allowable charge time for the super capacitor bank.
13. The method of claim 11, further comprising maintaining the charging current at a constant value.
14. The method of claim 11, wherein energy capacity and voltage rating of the super capacitor bank are configured to store energy sufficient for a specified application.
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