1. A nanowire structure comprising:
a first semiconductor material having a first lattice constant and a first linear thermal expansion constant; and
a second semiconductor material having a second lattice constant and a second linear thermal expansion constant surrounding the first semiconductor material,
wherein a ratio of the first lattice constant to the second lattice constant is from 0.98 to 1.02, and wherein a ratio of the first linear thermal expansion constant to the second linear thermal expansion constant is greater than 1.2 or less than 0.8.
2. The nanowire structure of claim 1, wherein the cross-sectional shape of the first semiconductor material comprises square or rectangular.
3. The nanowire structure of claim 1, wherein the cross-sectional shape of the first semiconductor material comprises circle or ellipse.
4. The nanowire structure of claim 1, wherein one of the first semiconductor material and the second semiconductor material is Si and the other comprises AlP or GaP.
5. The nanowire structure of claim 1, wherein one of the first semiconductor material and the second semiconductor material is AlAs and the other comprises Ge or GaAs.
6. The nanowire structure of claim 1, wherein one of the first semiconductor material and the second semiconductor material is GaSb and the other comprises InAs or AlSb.
7. The nanowire structure of claim 1, wherein a ratio of a thickness of the second semiconductor material to a thickness of the nanowire structure is from 0.05 to 0.5.
8. A semiconductor device comprising:
a source region and a drain region;
a nanowire structure between the source region and drain region comprising
a first semiconductor material having a first lattice constant and a first linear thermal expansion constant, and
a second semiconductor material having a second lattice constant and a second linear thermal expansion constant surrounding the first semiconductor material, wherein a ratio of the first lattice constant to the second lattice constant is from 0.98 to 1.02, wherein a ratio of the first linear thermal expansion constant to the second linear thermal expansion constant is greater than 1.2 or less than 0.8; and
a metal gate surrounding a channel portion of the nanowire structure.
9. The semiconductor device of claim 8, wherein the cross-sectional shape of the first semiconductor material comprises square or rectangular.
10. The semiconductor device of claim 8, wherein the cross-sectional shape of the first semiconductor material comprises circle or ellipse.
11. The semiconductor device of claim 8, wherein one of the first semiconductor material and the second semiconductor material is Si and the other comprises AlP or GaP.
12. The semiconductor device of claim 8, wherein one of the first semiconductor material and the second semiconductor material is AlAs and the other comprises Ge or GaAs.
13. The semiconductor device of claim 8, wherein one of the first semiconductor material and the second semiconductor material is GaSb and the other comprises InAs or AlSb.
14. The semiconductor device of claim 8, wherein a ratio of a thickness of the second semiconductor material to a thickness of the nanowire structure is from 0.05 to 0.5.
15. The semiconductor device of claim 8, wherein a lattice constant of the source region is greater than the lattice constant of the first semiconductor material.
16. The semiconductor device of claim 8, wherein a lattice constant of the source region is less than the lattice constant of the first semiconductor material.
17. The semiconductor device of claim 8, wherein the source region comprise SiGe.
18. The semiconductor device of claim 8, wherein the source region comprise SiC.
19.-20. (canceled)
21. A Gate-All-Around (GAA) transistor comprising:
an epitaxial source region;
an epitaxial drain region;
a nanowire structure disposed between and connected to the source and the drain regions, the nanowire structure comprising:
a first semiconductor material with a first lattice constant and a first linear thermal expansion constant; and
a second semiconductor material around the first semiconductor material, the second semiconductor material having a second lattice constant substantially matched to the first lattice constant, and a second linear thermal expansion constant different from the first linear thermal expansion constant,
wherein a third lattice constant of the source region is different from the first lattice constant of the first semiconductor material; and
a metal gate around a middle portion of the nanowire structure.
22. the GAA transistor of claim 21, wherein a ratio of the first lattice constant to the second lattice constant is from 0.98 to 1.02, and wherein a ratio of the first linear thermal expansion constant to the second linear thermal expansion constant is greater than 1.2 or less than 0.8.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. An easy-change mattress safety sheet system comprising a bottom base sheet and a removable top sheet which are attached by simple attaching means, wherein the base sheet covers the bottom and the four sides of the mattress and the top sheet covers the top surface of the mattress.
2. The easy-change mattress safety sheet system of claim 1, wherein the simple attaching means securely and detachably attaches the top sheet to the base sheet.
3. The easy-change mattress safety sheet system of claim 2, wherein the simple attaching means is selected from the group consisting of a zipper, velcro, or a plurality of snaps.
4. The easy-change mattress safety sheet system of claim 3, wherein the simple attaching means is a zipper.
5. The easy-change mattress safety sheet system of claim 4, wherein the slide of the zipper is located on the base sheet.
6. The easy-change mattress safety sheet system of claim 1, wherein the simple attaching means is identical in length to the perimeter of the mattress.
7. The easy-change mattress safety sheet system of claim 1, wherein the simple attaching means, after securely attaching the top sheet and the base sheet, is located on the mattress perimeter and is hidden under the bumper.
8. The easy-change mattress safety sheet system of claim 1 wherein the top sheet and the base sheet are made of cotton fabric.
9. The easy-change mattress safety sheet system of claim 8, wherein the cotton fabric of the top sheet has been pre-shrunk prior to attaching thereon the simple attaching means.
10. The easy-change mattress safety sheet system of claim 9, wherein the cotton fabric of the base sheet has been pre-shrunk prior to attaching thereon the simple attaching means.
11. The easy-change mattress safety sheet system of claim 4, wherein the zipper is attached so that the zipper pull can be hidden beneath the base of the zipper when fully closed.
12. The easy-change mattress safety sheet system of claim 1, wherein the attaching means is covered by a flap.
13. The easy-change mattress safety sheet system of claim 1, wherein either or both of the bottom base sheet and removable top sheet further comprise elastic to allow for adjustability of fit.
14. The easy-change mattress safety sheet system of claim 13, wherein the elastic is used in the vertical seams and the bottom of the base sheet.
15. The easy-change mattress safety sheet system of claim 1, wherein the mattress is used in bed selected from the group consisting of a crib, a toddler bed, or a bunk bed.
16. The easy-change mattress safety sheet system of claim 15, wherein the mattress is used in a crib.
17. The easy-change mattress safety sheet system of claim 15, wherein the mattress is used in a bunk bed.