1. A control line assembly for a surface wellhead, comprising:
a main housing assembly having an end selectively mounted to the wellhead;
a stem in the housing assembly;
a penetrating end on the stem extending through a passage in the wellhead;
a metal seal ring located at the penetrating end for sealingly engaging a tubing hanger installed within the wellhead when energized;
a locking ring that circumscribes the stem and that is in selective restraining contact with the stem; and
a hydraulically actuated locking piston that is in engaging contact with the locking ring.
2. The assembly of claim 1, further comprising:
a radial projection extending from the stem; and
a cylinder adapted to be pressurized via hydraulic fluid, wherein the hydraulic fluid exerts a distributed force on the radial projection of the stem to force the stem forward to thereby energize the metal seal ring at the penetrating end against the tubing hanger.
3. The assembly of claim 1, further comprising a recess formed on the exterior end of the stem that indicates when metal seal ring on the penetrating end of the stem is set against the tubing hanger, the recess located on the stem such that the recess is visible.
4. The assembly of claim 1, wherein
the locking piston initially maintains the locking ring off of a mating profile of the stem during setting of the metal seal ring; and
wherein the locking ring has a toothed inner profile for lockingly engaging the mating profile of the stem to lock the stem in place.
5. The assembly of claim 4, wherein the locking ring is split to define a split locking ring, and wherein a spring is located within the main housing assembly and interfaces with the split locking ring to drive the locking ring forward into mating engagement with the mating profile of the stem after the lockout piston is depressurized.
6. The assembly of claim 1, wherein the penetrating end comprises a bellows-like structure.
7. The assembly of claim 6, wherein a mating profile is formed on an outer surface of the stem.
8. A well completion system, comprising:
a wellhead having a body with a bore and a sidewall, the wellhead having at least one horizontal wellhead passage extending through the sidewall;
a tubing hanger located within the bore of the wellhead having a hanger passage,
a control line assembly comprising:
a main housing assembly having an end selectively mounted to the wellhead;
a stem in the housing assembly;
a penetrating end on the stem extending through the horizontal wellhead passage in the wellhead;
a hydraulically actuated locking assembly comprising a locking ring that circumscribes the stem and that is in selective restraining contact with the stem, and a hydraulically actuated lockout piston that is in engaging contact with the locking ring, the locking assembly being in selective securing engagement with the stem so that the stem is maintained in a setting position against the tubing hanger; and
a metal seal ring located at the penetrating end for sealingly engaging a tubing hanger installed within the wellhead when energized.
9. The system of claim 8, further comprising:
a radial projection extending from the stem; and
a cylinder adapted to be pressurized via hydraulic fluid, wherein the hydraulic fluid exerts a distributed force on the radial projection of the stem to force the stem forward to thereby energize the metal seal ring at the penetrating end against the tubing hanger.
10. The system of claim 8, further comprising a recess formed on the exterior end of the stem that indicates when metal seal ring on the penetrating end of the stem is set against the tubing hanger, the recess located on the stem such that the recess is visible.
11. The system of claim 8, wherein
the lockout piston is initially maintaining the locking ring off of a mating profile of the stem during setting of metal seal ring;
wherein the locking ring has a toothed inner profile for lockingly engaging the mating profile of the stem to lock the stem in place.
12. The system of claim 11, wherein the stem in the housing assembly is connected to a hydraulic source.
13. The system of claim 8, further comprising a secondary metal seal ring concentric with the stem for sealing between the stem and the main housing assembly.
14. The system of claim 13, wherein
at least one horizontal and at least one vertical hanger passage intersectingly communicate with each other;
the horizontal hanger passage registers with the horizontal wellhead passage; and
the vertical hanger passage communicates with a lower surface of the tubing hanger.
15. The system of claim 14, further comprising:
a key located at a lower portion of the tubing hanger; and
a recess formed in the wellhead bore for receiving the key;
wherein,
the key is outwardly biased by at least one spring; and
the key is received by the recess when the at least one horizontal hanger passage is aligned with the horizontal wellhead passage.
16. The system of claim 14, wherein the at least one horizontal hanger passage has an exit point on the tubing hanger located above a tubing hanger entry point of the at least one vertical hanger passage.
17. A method of controlling a device in a wellbore, comprising:
providing a control line assembly:
a main housing assembly having an end selectively mounted to the wellhead;
a stem in the housing assembly;
a penetrating end on the stem extending through a passage in the wellhead; and
a metal seal ring located at the penetrating end for sealingly engaging a tubing hanger installed within the wellhead when energized;
contacting a sealing end of the penetrating end with a control passage in the wellhead so that a passage in the stem registers with the control passage and defines an interface between the sealing end and the wellhead;
sealing the interface by maintaining a contact force on the stem;
pressurizing a lockdown piston to maintain a locking ring off of the mating profile of the stem during energizing of the metal seal ring; and
flowing a control fluid through the passage in the stem and into the control passage.
18. The method of claim 17, further comprising:
pressurizing a cylinder circumscribing the stem to force the stem forward to energize the metal seal ring.
19. The method of claim 17, further comprising:
setting a secondary metal seal ring to effect a seal between the main housing assembly and the stem.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of forming a dielectric film comprising:
positioning a substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor;
providing a single organosilicon precursor with a built-in organic porogen into said PECVD reactor in the absence of another porogen source, said single organosilicon precursor with a built-in organic porogen is selected from the group consisting of vinylmethyldiethoxysilane, vinyltriethoxysilane, vinyldimethylethoxysilane, hexavinyldisiloxane, trivinylmethoxysilane, trivinylethoxysilane, vinylmethylethoxysilane, vinylmethyldiethoxysilane, vinylmethyldimethoxysilane, vinylpentamethyldisiloxane, vinyltetramethyldisiloxane, and vinyltrimethoxysilane;
forming an as-deposited film from said single organsilicon precursor on said substrate, said as-deposited film comprising a SiCOH matrix component and an organic porogen component; and
performing a treatment step that substantially removes said organic porogen component from said as-deposited film, said treatment step conducted in the presence of an atmosphere selected from the group consisting of an inert gas and a hydrogen source and an inert gas, oxygen and water, thereby providing a porous SiCOH dielectric material having a dielectric constant of about 2.7 or lower, said SiCOH dielectric material having a covalently bonded tri-dimensional network structure, a controlled porosity having molecular scale voids of between about 0.5 to about 20 nanometers in diameter, said molecular scale voids occupying a volume of between about 5% and about 60%, a crack velocity in water on the order of less than 10\u221210 meters per second and is thermally stable above 350\xb0 C.
2. The method of claim 1 further comprising mixing an inert gas with said single organosilicon precursor with a built-in porogen.
3. The method of claim 1 further comprising mixing an oxidizing agent with said single organosilicon precursor with a built-in porogen.
4. The method of claim 1 wherein said substrate is a semiconducting material, an insulating material, a conductive material or a combination, including multilayers, thereof.
5. The method of claim 1 wherein said SiCOH matrix component and said organic porogen component are covalently bonded.
6. The method of claim 5 wherein said treatment step comprises selecting an energy source that is capable of dissociating said organic porogen component from said SiCOH matrix component, wherein said energy source comprises thermal, electron beam, plasma, UV, DUV or laser.
7. The method of claim 6 wherein said energy source is thermal and said thermal source is capable of providing a temperature up to 450\xb0 C.
8. The method of claim 7 wherein said thermal energy source is an annealing process that is performed in the presence of an inert gas and a hydrogen source.
9. The method of claim 7 wherein said thermal energy source is an annealing process that is conducted in the presence of an atmosphere that is an inert gas, oxygen and water wherein the partial pressure of O2 and H2O are below 1000 ppm.
10. The method of claim 6 wherein said energy source comprises UV or DUV light that can generate light having a wavelength from about 500 to about 150 nm.
11. The method of claim 6 wherein said energy source comprises a UV or DUV light treatment conducted in the presence of said inert gas and hydrogen source.
12. The method of claim 6 wherein said energy source is a UV light treatment conducted in the presence of an inert gas, oxygen and water atmosphere wherein the partial pressure of O2 and H2O are below 1000 ppm.
13. The method of claim 1 wherein said steps are incorporated within a process for fabricating an interconnect structure in an electronic device.
14. The method of claim 1 wherein said hydrogen source is hydrogen or a hydrocarbon.
15. The method of claim 1 wherein the built-in organic porogen present in the single organosilicon precursor is a silicon-containing component.
16. A method of forming a dielectric film comprising:
positioning a substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor;
providing a single organosilicon precursor including a silicon containing organic porogen into said PECVD reactor, said single organosilicon precursor with a built-in organic porogen comprising a silane derivative having the molecular formula SiRR1R2R3, a disiloxane derivative having the molecular formula R4R5R6\u2014Si\u2014O\u2014Si\u2014R7R8R9, or a trisiloxane derivative having the molecular formula R10R11R12\u2014Si\u2014O\u2014Si\u2014R13R14\u2014O\u2014Si\u2014R15R16R17 where R and R1-17 may or may not be identical and are selected from H, alkyl, alkoxy, epoxy, phenyl, vinyl, allyl, alkenyl or alkynyl groups that may be linear, branched, cyclic, polycyclic and may be functionalized with oxygen, nitrogen or fluorine containing substituents;
forming an as-deposited film from said single organsilicon precursor on said substrate, said as deposited film comprising a SiCOH matrix component and an organic porogen component; and
performing a treatment step that substantially removes said organic porogen component from said as deposited film thereby providing a SiCOH dielectric material having a dielectric constant of about 2.7 or lower.