1. A semiconductor package comprising:
a semiconductor chip having a first surface, a second surface which faces away from the first surface, and through holes which pass through the first surface and the second surface;
a dielectric layer formed on one or more of the first surface and the second surface, wherein grooves are formed around the through holes on a fourth surface of the dielectric layer facing away from a third surface of the dielectric layer which is attached to the semiconductor chip;
through-silicon vias filling the through holes; and
bumps formed on the through-silicon vias and on portions of the dielectric layer around the through-silicon vias and filling the grooves.
2. The semiconductor package according to claim 1, wherein the semiconductor chip comprises a circuit unit for storing and processing data on the first surface.
3. The semiconductor package according to claim 1, wherein each of the grooves has a polygonal or semicircular cross-sectional shape when viewed from the side.
4. The semiconductor package according to claim 1, wherein each of the grooves has a width that is greater at a bottom than a top.
5. The semiconductor package according to claim 4, wherein each of the grooves has a trapezoidal cross-sectional shape in which a width gradually increases from a top to a bottom when viewed from the side.
6. The semiconductor package according to claim 4, wherein each of the grooves has a bulb-like cross-sectional shape which has a neck portion with a linear profile and a circular portion extending downwards from the neck portion.
7. The semiconductor package according to claim 1, wherein each of the grooves has a closed-loop shape which surrounds a corresponding through-silicon via, when viewed from the top.
8. The semiconductor package according to claim 1, wherein a plurality of separate grooves are formed around a corresponding through-silicon via, when viewed from the top.
9. The semiconductor package according to claim 1, wherein center portions of the bumps are formed to be thicker than the edge portions of the bumps.
10. The semiconductor package according to claim 1, further comprising:
additional bumps formed on center portions of the bumps.
11. The semiconductor package according to claim 1, wherein the dielectric layer comprises one or more of an oxide layer and a polymer layer.
12. A stack-type semiconductor package comprising:
a plurality of semiconductor packages including a semiconductor chip having a first surface, a second surface which faces away from the first surface, and through holes which pass through the first surface and the second surface, a dielectric layer formed on one or more of the first surface and the second surface and formed with grooves around the through holes on a fourth surface of the dielectric layer facing away from a third surface of the dielectric layer which is attached to the semiconductor chip, through-silicon vias filling the through holes, and bumps formed on the through-silicon vias and on portions of the dielectric layer around the through-silicon vias and filling the grooves, and stacked such that the through-silicon vias and the bumps of the semiconductor packages are coupled to each other; and
connection components electrically connecting the bumps and the through-silicon vias of the stack-type semiconductor packages.
13. The stack-type semiconductor package according to claim 12, wherein the semiconductor chip comprises a circuit unit for storing and processing data on the first surface.
14. The stack-type semiconductor package according to claim 12, wherein each of the grooves has a polygonal or semicircular cross-sectional shape when viewed from the side.
15. The stack-type semiconductor package according to claim 12, wherein each of the grooves has a width that is greater at a bottom than a top.
16. The stack-type semiconductor package according to claim 15, wherein each of the grooves has a trapezoidal cross-sectional shape in which a width gradually increases from a top to a bottom when viewed from the side.
17. The stack-type semiconductor package according to claim 15, wherein each of the grooves has a bulb-like cross-sectional shape which has a neck portion with a linear profile and a circular portion extending downwards from the neck portion.
18. The stack-type semiconductor package according to claim 12, wherein each of the grooves has a closed-loop shape which surrounds a corresponding through-silicon via, when viewed from the top.
19. The stack-type semiconductor package according to claim 12, wherein a plurality of separate grooves are defined around a corresponding through-silicon via, when viewed from the top.
20. The stack-type semiconductor package according to claim 12, wherein center portions of the bumps are formed to be thicker than the edge portions of the bumps.
21. The stack-type semiconductor package according to claim 12, wherein each semiconductor package further includes additional bumps formed on center portions of the bumps.
22. The stack-type semiconductor package according to claim 12, wherein the dielectric layer comprises one or more of an oxide layer and a polymer layer.
23. The stack-type semiconductor package according to claim 12, further comprising:
a first dielectric layer formed on a lower surface of a semiconductor package positioned lowermost among the stack-type semiconductor packages in such a way as to expose the through-silicon vias of the lowermost semiconductor package;
redistribution lines formed under the first dielectric layer and electrically connected to the exposed through-silicon vias of the lowermost semiconductor package; and
a second dielectric layer formed under the first dielectric layer including the redistribution lines in such a way as to expose portions of the redistribution lines.
24. The stack-type semiconductor package according to claim 23, further comprising:
external connection terminals formed on the portions of the redistribution lines which are exposed through the second dielectric line.
25. The stack-type semiconductor package according to claim 12, further comprising:
a substrate supporting the plurality of stacked semiconductor packages and comprising connection pads which are electrically connected to the through-silicon vias of the lowermost semiconductor package among the plurality of semiconductor packages stacked.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A resin blend for forming a layer-separated structure, comprising:
a first resin; and
a second resin that comprises an acrylic copolymer containing a silica particle and has a molecular weight distribution of 1 to 2.5,
wherein the resin blend is capable of forming a layer-separated structure during melt-processing.
2. The resin blend according to claim 1, wherein the second resin has a molecular weight distribution of 1 to 2.3.
3. The resin blend according to claim 1, wherein the second resin has a difference in surface energy from the first resin at 25\xb0 C. of 0.1 to 35 mNm.
4. The resin blend according to claim 1, wherein the second resin has a difference in melt viscosity from the first resin of 0.1 to 3000 pa*s at a shear rate of 100 to 1000s\u22121 and a processing temperature of the resin blend.
5. The resin blend according to claim 1, wherein the second resin has a difference in solubility parameter from the first resin of 0.001 to 10.0 (Jcm3)12 at 25\xb0 C.
6. The resin blend according to claim 1, wherein the second resin has a weight average molecular weight of 30,000 to 200,000.
7. The resin blend according to claim 1, wherein the silica particle is a nano-silica particle of which an acrylic compound is treated on a surface.
8. The resin blend according to claim 7, wherein the acrylic compound bound to the surface of the nano-silica particle comprises a compound represented by the following Chemical Formula 1:
wherein R1, R2 and R3 are identical or different each other, R1, R2 and R3 from are each independently an alkoxy group having 1 to 16 carbon atoms, and R4 is an alkylene group having 1 to 16 carbon atoms.
9. The resin blend according to claim 7, wherein the nano-silica particle has an average particle diameter of 10 to 100 nm.
10. The resin blend according to claim 1, wherein the first resin comprises at least one selected from the group consisting of a styrene-based resin, a polyolefin-based resin, a thermoplastic elastomer, a polyoxyalkylene-based resin, a polyester-based resin, a polyvinyl chloride-based resin, a polycarbonate-based resin, a polyphenylene sulfide-based resin, a vinyl alcohol-based resin, an acrylate-based resin, engineering plastics and a copolymer thereof.
11. The resin blend according to claim 1, wherein the second resin further comprises a resin to which at least one organic functional group selected from the group consisting of an alkyl group having 2 to 20 carbon atoms; an alicyclic group having 5 to 40 carbon atoms; an aromatic group having 6 to 40 carbon atoms; an alkyl group having 1 to 20 carbon atoms that is substituted by a perfluoro alkyl group having 1 to 20 carbon atoms; a hydroxyalkyl group having 1 to 20 carbon atoms; and an alkyl group having 1 to 20 carbon atoms that has an epoxy group; is introduced.
12. The resin blend according to claim 11, wherein the resin comprises at least one selected from the group consisting of a (meth)acrylate-based resin, an epoxy-based resin, an oxetane-based resin, an isocyanate-based resin, a silicon-based resin, a fluorine-based resin and a copolymer thereof.
13. A method of preparing a resin article, comprising:
melting the resin blend of claim 1 to form a melt blend; and then
processing the melt blend to form a layer-separated structure.
14. The method according to claim 13, further comprising:
curing the layer-separated structure.
15. The resin blend of claim 1, wherein the second resin has a molecular weight distribution of 1.9 to 2.5.
16. The resin blend of claim 1, wherein the second resin has a molecular weight distribution of 1.9 to 2.3.
17. A pellet having a layer-separated structure, comprising:
a core comprising a first resin; and
a shell comprising a second resin that comprises an acrylic copolymer containing a silica particle and has a molecular weight distribution of 1 to 2.5.
18. A method of preparing a resin article, comprising:
melting a pellet of claim 17 to form a melt; and
processing the melt.
19. A resin article having a layer-separated structure, comprising:
a first resin layer including a first resin;
a second resin layer including a second resin formed on the first resin layer; and
an interface layer comprising the first resin and the second resin and formed between the first resin layer and the second resin layer,
wherein the second resin comprises an acrylic copolymer containing a silica particle.
20. The resin article according to claim 19, wherein component of the first resin layer is detected on a surface of the second resin layer by infrared spectrometer.