1-28. (canceled)
29. An electronic assembly comprising:
a microelectronic die;
a heat sink; and
a thermal interface material between the microelectronic die and the heat sink, the thermal interface material comprising a phase change polymer, a solder material, and a plurality of thermally conductive non-fusible particles, the solder material interconnecting the non-fusible particles to form a plurality of columnar structures within the phase change polymer.
30. The electronic assembly of claim 29, wherein the thermal interface material further comprises a non-phase change polymer.
31. The electronic assembly of claim 29, wherein the phase change polymer is a liquid above 45\xb0 C.
32. The electronic assembly of claim 29, wherein a non-fusible mesh is placed within the phase change polymer of the thermal interface material.
33. The electronic assembly of claim 29, wherein the non-fusible particles include at least one of glass fiber, graphite fibers, carbon fibers, boron nitride, aluminum oxides, zinc oxide, aluminum, boron nitride, silver, graphite, carbon fibers, diamond, metal coated carbon fiber, and metal coated diamond.
34. The electronic assembly of claim 33, wherein the non-fusible particles are excluded from the group consisting of lead, cadmium, mercury, antimony and arsenic.
35. An electronic assembly comprising:
a microelectronic die;
a heat spreader;
a heat sink; and
first and second thermal interface materials, the first thermal interface material being between the microelectronic die and the heat spreader and the second thermal interface material being between the heat spreader and the heat sink, the first and second thermal interface materials each comprising a phase change polymer, a solder material, and a plurality of thermally conductive non-fusible particles, the solder material interconnecting the non-fusible particles to form a plurality of columnar structures within the phase change polymer.
36. The electronic assembly of claim 35, wherein at least one of the first and second thermal interface materials further comprise a non-phase change polymer.
37. The electronic assembly of claim 35, wherein the phase change polymer in at least one of the first and second thermal interface materials is a liquid above 45\xb0 C.
38. The electronic assembly of claim 35, wherein a non-fusible mesh is placed within the phase change polymer of at least one of the first and second thermal interface materials.
39. The electronic assembly of claim 35, wherein the non-fusible particles include at least one of glass fiber, graphite fibers, carbon fibers, boron nitride, aluminum oxides, zinc oxide, aluminum, boron nitride, silver, graphite, carbon fibers, diamond, metal coated carbon fiber, and metal coated diamond.
40. The electronic assembly of claim 39, wherein the non-fusible particles are excluded from the group consisting of lead, cadmium, mercury, antimony and arsenic.
41. A method of constructing an electronic assembly comprising:
interconnecting a microelectronic die and a heat sink with a thermal interface material, the thermal interface material comprising a phase change polymer, a solder material, and a plurality of thermally conductive non-fusible particles, the solder material interconnecting the non-fusible particles to form a plurality of columnar structures within the phase change polymer.
42. The method of claim 41, wherein the thermal interface material further comprises a non-phase change polymer.
43. The method of claim 41, wherein the phase change polymer is a liquid above 45\xb0 C.
44. The method of claim 41, further comprising placing a non-fusible mesh within the phase change polymer of the thermal interface material.
45. The method of claim 41, wherein the non-fusible particles include at least one of glass fiber, graphite fibers, carbon fibers, boron nitride, aluminum oxides, zinc oxide, aluminum, boron nitride, silver, graphite, carbon fibers, diamond, metal coated carbon fiber, and metal coated diamond.
46. The method of claim 45, wherein the non-fusible particles are excluded from the group consisting of lead, cadmium, mercury, antimony and arsenic.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A compound of the form:
wherein R is \u2014(CH2)2\u2014O\u2014CH2CH3.
2. A pharmaceutical composition comprising a compound according to claim 1 together with a carrier.
3. The composition according to claim 2, wherein said carrier is a pharmaceutical preparation having the form of an ointment or a gel.
4. The composition according to claim 2, wherein said carrier is comprised of polymer microparticles.
5. The composition according to claim 2, wherein said carrier is a pharmaceutical preparation having the form of a liquid, tablet, or suppository.
6. The composition according to claim 2 wherein said carrier is a stent.
7. The composition according to claim 6 wherein said stent is formed of metal or polymer.
8. The composition according to claim 7 wherein said stent is formed of a biodegradable polymer.
9. The composition according to claim 7, wherein said stent is metal and said compound is carried directly on the surface of the stent.
10. The composition according to claim 7, where said compound is carried in a polymer layer in contact with said stent.
11. The composition according to claim 8, where said compound is carried in a polymer layer in contact with said stent.
12. A method of treating any of the following conditions:
(i) restenosis;
(ii) wound healing;
(iii) vascular injury;
(iv) vascular inflammation; and
(v) transplant rejection, comprising administering a compound according to claim 1.