1. An image processing method comprising the steps of:
inputting image data;
detecting a ground pattern in the input image data;
setting information used for detecting the ground pattern; and
transmitting the information to an external device.
2. The image processing method according to claim 1, wherein the image data is received from the external device.
3. The image processing method according to claim 1, further comprising the step of setting second information used for image processing of the ground pattern.
4. The image processing method according to claim 3, wherein the second information is also transmitted to the external device.
5. The image processing method according to claim 1, further comprising the step of comparing the information used for detecting the ground pattern with information already registered, and registering the former information according to a result of the comparison.
6. The image processing method according to claim 3, wherein the image processing comprises emphasis of the ground pattern.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A fast recovery diode comprising:
a base layer of a first conductivity type, the base layer having a cathode side and an anode side opposite the cathode side;
an anode buffer layer of a second conductivity type having a first depth and a first maximum doping concentration on the anode side;
an anode contact layer of the second conductivity type having a second depth, which is lower than the first depth, and a second maximum doping concentration, which is higher than the first maximum doping concentration;
a space charge region of the anode junction at a breakdown voltage, which is located between a third depth and the cathode side, the third depth being arranged between the first and the second depth, the first, second and third depths being measured from the anode side, and
a defect layer with a defect peak, which is arranged between the second depth and the third depth.
2. The diode according to claim 1, wherein at least one of the anode buffer layer and the anode contact layer have a circular shape.
3. The diode according to claim 1, wherein the diode comprises at least one termination layer of the second conductivity type, the at least one termination layer being arranged on the anode side in a termination area of the diode.
4. The diode according to claim 3, wherein any of the at least one termination layer have at least one of a circular shape and a quadrilateral shape.
5. A method for manufacturing a fast recovery diode, the method comprising:
providing a wafer of a first conductivity type, the wafer having a cathode side and an anode side opposite the cathode side;
creating an anode buffer layer by applying first ions of a second conductivity type on the anode side, and by diffusing the first ions into the wafer to create the anode buffer layer with a first depth and a first maximum doping concentration;
creating an anode contact layer by applying second ions of the second conductivity type on the anode side, and by diffusing the second ions into the wafer to create the anode contact layer with a second depth, which is lower than the first depth, and a second maximum doping concentration, which is higher than the first maximum doping concentration;
forming a cathode electrode and an anode electrode; and
irradiating the wafer with third ions to create a defect layer having a defect peak,
wherein an energy of the third ions is such that the defect peak is arranged between the second depth and a third depth, the third depth being smaller than the first depth, and the third depth being a depth between which depth and the cathode side at a breakdown voltage a space charge region of the anode junction is located, and
the first, second and third depths being measured from the anode side.
6. The method for manufacturing the diode according to claim 7, comprising applying a mask on the anode side to apply at least one of the first ions and the second ions.
7. The method for manufacturing the diode according to claim 6, wherein
the mask has an opening in a central part of the wafer, and the mask has at least one opening in a termination area of the wafer to create at least one termination layer of the second conductivity type.
8. The method for manufacturing the diode according to claim 5, wherein
at least one of the first and second ions are boron.
9. The method for manufacturing the diode according to claim 5, wherein
a maximum doping concentration of the anode buffer layer is within a range between 1*1015 cm\u22123 and 5*1016 cm\u22123.
10. The method for manufacturing the diode according to claim 5, wherein
the first depth is at maximum 25 \u03bcm, and the second depth is at maximum 5 \u03bcm.
11. A device comprising an integrated gate commutated thyristor and the diode according to claim 1.
12. The diode according to claim 1, wherein at least one of the anode buffer layer and the anode contact layer have a quadrilateral shape.
13. The diode according to claim 12, wherein the diode comprises at least one termination layer of the second conductivity type, the at least one termination layer being arranged on the anode side in a termination area of the diode.
14. The diode according to claim 13, wherein any of the at least one termination layer have at least one of a circular shape and a quadrilateral shape.
15. The method for manufacturing the diode according to claim 8, wherein the third ions are one of protons and helium.
16. The method for manufacturing the diode according to claim 5, wherein
a maximum doping concentration of the anode buffer layer is within a range between 2*1015 cm\u22123 and 3*1016 cm\u22123.
17. A device comprising an insulated gate bipolar transistor and the diode according to claim 1.