1. An input display, comprising:
a photo sensitive transistor comprising:
a low-field electrode;
a high-field electrode connected to said low-field electrode with a connecting section; and
a field-effect area positioned in said connecting section and being near to said high-field electrode, wherein a PN junction field is formed in said field-effect area when said photo sensitive transistor is switched off; and
a light blocking layer corresponding to said high-field electrode, hiding said field-effect area from all incident light, and exposing a portion of said connecting section between said low-field electrode and said high-field electrode to the incident light.
2. The input display as claimed in claim 1, wherein said photo sensitive transistor comprises a thin film transistor (TFT).
3. The input display as claimed in claim 2, wherein said TFT comprises a N+ amorphous silicon layer formed below said low-field electrode and said high field electrode, an amorphous silicon layer formed below said N+ amorphous silicon layer, a gate insulator layer formed below said amorphous silicon layer, and a metal layer formed below said gate insulator layer, and said connecting section comprises said amorphous silicon layer.
4. The input display as claimed in claim 3 further comprising at least a gate line, wherein said metal layer is connected to said gate line.
5. The input display as claimed in claim 1 further comprising a color filter (CF) and a passivation layer.
6. The input display as claimed in claim 3, wherein an indium-tin-oxide (ITO) layer is formed to connect said low-field electrode and said metal layer.
7. The input display as claimed in claim 1 further comprising at least a fixed voltage line, wherein only one of said high-field electrode and said low-field electrode is connected to said fixed voltage line.
8. The input display as claimed in claim 7 further comprising at least a read-out line, wherein said low-field electrode is connected to said fixed voltage line while said high-field electrode is connected to said read-out line and said low-field electrode is connected to said read-out line while said high-field electrode is connected to said fixed voltage line.
9. The input display as claimed in claim 5, wherein said light blocking layer is a black matrix (BM) located on a first side of said CF.
10. The input display as claimed in claim 9, wherein said high-field electrode has a side facing said CF and having a passivation layer formed thereon.
11. The input display as claimed in claim 10, wherein a photo-induced leakage current produced by a plurality of electrons influenced by said incident light and said PN junction field in said field-effect area is eliminated because said BM hides said field-effect area.
12. The input display as claimed in claim 1, wherein said light blocking layer is located on said high-field electrode.
13. The input display as claimed in claim 12 further comprising a passivation layer formed between said light blocking layer and said high-field electrode.
14. The input display as claimed in claim 13, wherein a photo-induced leakage current produced by a plurality of electrons influenced by said incident light and said PN junction field in said field-effect area is eliminated because said light blocking layer hides said field-effect area.
15. The input display as claimed in claim 1, wherein said field-effect area has a width in a range of 1 to 5 micrometer.
16. A pixel unit, comprising:
a photo-sensitive transistor comprising:
a low-field electrode;
a high-field electrode connected to said low-field electrode with a connecting section; and
a field-effect area positioned in said connecting section and being near to said high-field electrode, wherein a PN junction field is formed in said field-effect area when said photo sensitive transistor is switched off; and
a light blocking layer corresponding to said high-field electrode, hiding said field-effect area from all incident light, and exposing a portion of said connecting section between said low-field electrode and said high-field electrode to the incident light.
17. The pixel unit as claimed in claim 16, wherein said photo sensitive transistor comprises a thin film transistor (TFT).
18. The pixel unit as claimed in claim 17, wherein said TFT comprises a N+ amorphous silicon layer formed below said low-field electrode and said high-field electrode, an amorphous silicon layer formed below said N+ amorphous silicon layer, a gate insulator layer formed below said amorphous silicon layer, and a metal layer formed below said gate insulator layer, and said connecting section comprises said amorphous silicon layer.
19. The pixel unit as claimed in claim 18 further comprising at least a gate line, wherein said metal layer is connected to said gate line.
20. The pixel unit as claimed in claim 16 further comprising a color filter (CF) and a passivation layer.
21. The pixel unit as claimed in claim 18, wherein an indium-tin-oxide (ITO) layer is formed to connect said low-field electrode and said metal layer.
22. The pixel unit as claimed in claim 16 further comprising at least a fixed voltage line, wherein only one of said high-field electrode and said low-field electrode is connected to said fixed voltage line.
23. The pixel unit as claimed in claim 22 further comprising at least a read-out line, wherein said low-field electrode is connected to said fixed voltage line while said high-field electrode is connected to said read-out line and said low-field electrode is connected to said read-out line while said high-field electrode is connected to said fixed voltage line.
24. The pixel unit as claimed in claim 21, wherein said light blocking layer is one selected from a group consisting of a black matrix (BM) located on a first side of said CF and a layer located on said high-field electrode.
25. The pixel unit as claimed in claim 16, wherein said field-effect area has a width in a range of 1 to 5 micrometer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A vehicle equipped with a hydraulically-operated device comprising:
an engine that drives the hydraulically-operated device;
a temperature detection unit that detects a temperature of the engine or hydraulic oil; and
a control unit that controls the engine, wherein
the control unit is allowed to control torque of the engine in accordance with a predetermined specified torque limit value when the control unit is in an Eco-mode,
the control unit controls the engine without controlling the torque of the engine in accordance with the specified torque limit value in the Eco-mode when the temperature detected by the temperature detection unit is at a predetermined release temperature or lower, and
the release temperature is set as a temperature at which output of the engine is hard to be stabilized when the torque of the engine is controlled.
2. The vehicle equipped with the hydraulically-operated device according to claim 1, wherein
when the detected temperature is at a predetermined specified temperature or higher, the control unit controls the torque of the engine in accordance with the specified torque limit value in the Eco-mode, and
the specified temperature is higher than the release temperature.
3. The vehicle equipped with the hydraulically-operated device according to claim 2, wherein
when the detected temperature has exceeded the release temperature, the control unit changes a torque limit value gradually with an increase of the detected temperature until the detected temperature reaches the specified temperature.
4. The vehicle equipped with the hydraulically-operated device according to claim 1, wherein when the detected temperature has exceeded the release temperature, the control unit changes the torque limit value gradually with elapse of time.
5. The vehicle equipped with the hydraulically-operated device according to claim 2, wherein
when the detected temperature has exceeded the release temperature, the control unit performs both a temperature-dependent control in which the torque limit value is changed gradually with an increase of the detected temperature until the detected temperature reaches the specified temperature, and a time-dependent control in which the torque limit value is changed gradually with the elapse of time, and compares a change rate of the torque limit value per unit time when the temperature-dependent control is performed and a change rate of the torque limit value per unit time when the time-dependent control is performed to perform one of the controls whose change rate is smaller.