I claim:
1. A starch applicator system, comprising a substrate that is capable of releasably holding a compound comprising a starch.
2. The system of claim 1 wherein the substrate holds a compound comprising a starch via absorption to achieve a moist substrate.
3. The system of claim 1 wherein the substrate holds a compound comprising a starch via surface adhesion such that the substrate and compound are dry.
4. The system of claim 1 wherein the compound is a liquid comprising a starch.
5. The system of claim 1 wherein the compound is a powder comprising a starch.
6. The system of claim 1 wherein the compound comprises a starch and a stain blocker.
7. The system of claim 1 wherein the compound comprises a starch and a stain remover.
8. The system of claim 1 wherein the compound comprises a starch and a perfume.
9. The system of claim 1 wherein the compound comprises a starch and an insect repellent.
10. The system of claim 1 wherein the compound comprises a starch and an anti-flaking agent.
11. A starch applicator system, comprising:
a substrate that is capable of releasably holding a compound that includes a starch; and
a substrate container that is enabled to removably contain a substrate.
12. The system of claim 11 wherein the substrate container is adapted to minimize evaporation.
13. The system of claim 11 wherein the substrate container is adapted to promote the removal of one substrate at a time via a tight-opening located in the container.
14. The system of claim 11 further comprising a second substrate, the second substrate and the substrate being integrally attached, and being separated by a perforation that does not tear unless a predefined tearing force of tension is applied to the perforation.
15. The system of claim 11 further comprising a second substrate, the second substrate being folded with the substrate.
16. The system of claim 11 wherein the substrate container is a resealable plastic bag.
17. The system of claim 11 wherein the substrate container is a self-sealing cylindrical container that is adapted to accept a roll of substrates.
18. The system of claim 11 wherein the substrate container is resealable, and adapted to accept a plurality of folded and stacked substrates.
19. The system of claim 11 further comprising a removable package seal that environmentally isolates a substrate within the substrate container.
20. The system of claim 11 wherein the substrate container is a cardboard box.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device comprising:
a n-conductivity type silicon semiconductor substrate having a surface including an active semiconductor device;
a p-conductivity type region disposed in the semiconductor substrate having a first end and a second end forming a channel there between;
a first electrical terminal composed of nickel or copper disposed on the first end semiconductor substrate;
a second electrical terminal composed of nickel or copper disposed on the second end semiconductor substrate; and
wherein an electromigration-induced silicide line is formed in the channel between the first and the second electrical terminal when the applied current to the terminals increases.
2. A device as defined in claim 1, wherein the channel is between 150 and 200 micrometers long and between 5 and 15 micrometers wide.
3. A device as defined in claim 1, wherein the applied current is between 60 and 90 mA.
4. A device as defined in claim 1, wherein the silicide line is between 1 and 2 microns in width, and less than one micron in depth.
5. A semiconductor device comprising:
a semiconductor substrate having a surface including an active circuit;
a first electrical test point disposed in the circuit on the semiconductor substrate;
a second electrical test point disposed in the circuit on the semiconductor substrate; and
a shunting element composed of p+ conductivity type silicon disposed on the semiconductor substrate having a first end coupled to the first electrical test point and a second end coupled to the second test point, the shunting element having a first resistance range for current flow through the element up to a predetermined current threshold, and operate so that if the current flow through the shunting element exceeds the predetermined threshold, the resistance of the shunting element will drop substantially below that of the first resistance range.
6. A device as defined in claim 5, wherein the shunting element is a channel disposed in the semiconductor substrate in which is formed an electromigration induced conductive silicide line as a function of applied current through the channel.
7. A device as defined in claim 5, further comprising a first electrical terminal composed of nickel or copper disposed at the first test point and a second electrical terminal composed of nickel or copper disposed at the second test point.
8. A device as defined in claim 5, wherein the semiconductor substrate is composed of n conductivity type silicon.
9. A device as defined in claim 6, wherein the channel is between 150 and 200 micrometers long and between 5 and 15 micrometers wide.
10. A device as defined in claim 5, wherein the applied current is between 60 and 90 mA.
11. A device as defined in claim 6, wherein the silicide line is between 1 and 2 microns in width, and less than one micron in depth.
12. A semiconductor device comprising:
a semiconductor substrate having a surface including an active circuit;
a first electrical terminal of a first polarity disposed in the circuit on the semiconductor substrate;
a second electrical terminal of a second polarity disposed in the circuit on the semiconductor substrate; and
a shunting semiconductor region disposed on the semiconductor substrate in a parallel electrical circuit to the active circuit, the shunting semiconductor region having a first end coupled to the first electrical terminal and a second end coupled to the second terminal, wherein a conductive silicide line is formed in the region when a threshold current between the first and second terminals in reached, the silicide line thereby functioning to prevent electrical damage to the active circuit by discharging charge built up on an external object coming into proximate disposition to the substrate.
13. A device as defined in claim 12, wherein the semiconductor substrate is n-conductivity type silicon, the shunting semiconductor region is composed of p+ conductivity type silicon having a first resistance range for current flow through the element up to a predetermined current threshold, and operating so that if the current flow through the shunting region exceeds the predetermined current threshold, the resistance of the shunting region will drop substantially below that of the first resistance range.
14. A device as defined in claim 12, wherein the shunting region is a channel disposed in the semiconductor substrate in which is formed an electromigration induced conductive silicide line as a function of applied current through the channel.
15. A device as defined in claim 12, wherein the first electrical terminal is composed of nickel or copper, and the second electrical terminal is composed of nickel or copper.
16. A device as defined in claim 12, wherein the semiconductor substrate is composed of n conductivity type silicon.
17. A device as defined in claim 12, wherein the channel is between 150 and 200 micrometers long and between 5 and 15 micrometers wide.
18. A device as defined in claim 12, wherein the applied current is between 60 and 90 mA.
19. A device as defined in claim 12, wherein the silicide line is between 1 and 2 microns in width, and less than one micron in depth.
20. A device as defined in claim 12, wherein the channel is between 150 and 200 micrometers long and between 5 and 15 micrometers wide, the silicide line is composed of nickel silicide and between 1 and 2 microns in width, and less than one micron in depth.