1. A composite-metal male fastener comprising:
an elongate hollow shell made of metal, said shell element including a proximal extremity, a distal extremity and a longitudinally aligned central bore having a substantially circular cross-section, said proximal extremity including a radially extending flange having a top, one or more sides, a bottom and an opening extending into said bore, said distal extremity’s exterior including male threads for threadably receiving the threads of a female fastener; and
a core element made of a composite material, said core element filling said shell’s central bore, said core element further extending proximally and radially from said bore to encapsulate said flange including covering said flange’s top and one or more sides to form a male fastener head for rotation of the male fastener, and wherein said flange is not circular in order to inhibit rotation of said flange within said head.
2. The composite-metal male fastener of claim 1 wherein said core element encapsulates said flange includes covering said flange’s bottom.
3. The composite-metal male fastener of claim 1 wherein said shell element is made of a titanium alloy and said core element is made of polyetheretherketone.
4. The composite-metal male fastener of claim 1 wherein said head is polygonal.
5. The composite-metal male fastener of claim 1 wherein said head is hexagonal.
6. The composite-metal male fastener of claim 1 wherein said flange is polygonal and said head is polygonal.
7. The composite-metal male fastener of claim 1 wherein said flange is polygonal and said head is polygonal but not the same polygonal shape as said flange.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of manufacturing a semiconductor device, comprising:
forming a conductive layer over a semiconductor substrate;
selectively removing the conductive layer for forming a resistance element and a gate electrode;
forming sidewall spacers over sidewalls of the remaining conductive layer;
forming a first insulating film containing a nitrogen over the semiconductor substrate having the sidewall spacers;
implanting ions in the semiconductor substrate through the first insulating film;
forming a second insulating film containing a nitrogen over the first insulating film after implanting ions in the semiconductor substrate through the first insulating film; and
selectively removing the first and the second insulating film such that at least a part of the first and the second insulating films is remained over the semiconductor substrate and over the conductive layer.
2. The method according to claim 1, wherein the forming the first insulating film containing the nitrogen over the semiconductor substrate having the sidewall spacers is carried out so that a thickness of the first insulating film is formed in the range of 1 nm to 5 nm.
3. The method according to claim 1, wherein the first insulating film is formed by atomic layer deposition method.
4. The method according to claim 1, further comprising forming a silicide layer over the semiconductor substrate and over the remaining conductive layer at portions exposed by the first and the second insulating film.
5. The method according to claim 1, wherein the sidewall spacers include silicon oxide, and the first and the second insulating films include silicon nitride.
6. The method according to claim 1, wherein the forming sidewall spacers over the sidewalls of the remaining conductive layer is performed by forming first sidewall spacers over the sidewalls of the remaining conductive layer, and forming second sidewall spacers over the first sidewall spacers, the second sidewall spacers having the etching resistance property greater than the etching resistance property of the first sidewall spacers against etchant for etching the first sidewall spacers.
7. The method according to claim 6, wherein the first sidewall spacers include silicon oxide, and the second sidewall spacers include silicon nitride.