1. A method for measurement of a specimen, comprising:
generating reflectometrie data and spectroscopic ellipsometric data by measuring the specimen;
determining a thickness of a nitrided oxide gate dielectric formed on the specimen from the reflectometric data measured at a visible wavelength;
determining an index of refraction of the nitrided oxide gate dielectric from the thickness and the spectroscopic ellipsometric data; and
determining a nitrogen concentration of the nitrided oxide gate dielectric from the index of refraction.
2. The method of claim 1, wherein said generating comprises generating the spectroscopic ellipsometric data at wavelengths from about 220 nm to about 900 nm.
3. The method of claim 1, wherein said generating comprises generating the spectroscopic ellipsometric data at wavelengths from about 190 nm to about 300 nm.
4. The method of claim 1, wherein said generating comprises generating the spectroscopic ellipsometric data at vacuum ultraviolet wavelengths.
5. The method of claim 1, wherein said generating comprises generating the reflectometric data and the spectroscopic ellipsometric data at multiple locations on the specimen, the method further comprising determining the nitrogen concentration at the multiple locations and determining a within wafer uniformity of the nitrogen concentration.
6. The method of claim 1, wherein the spectroscopic ellipsometric data and the reflectometric data are generated with one system.
7. The method of claim 1, further comprising removing contaminants from a localized area on the specimen using a laser-based cleaning subsystem prior to said generating, wherein said generating comprises generating the reflectometric data and the spectroscopic ellipsometric data at the localized area.
8. The method of claim 1, wherein said generating comprises generating the reflectometric data and the spectroscopic ellipsometric data during a semiconductor fabrication process.
9. The method of claim 1, further comprising altering one or more parameters of a semiconductor fabrication process based on the nitrogen concentration.
10. The method of claim 1, further comprising monitoring one or more parameters of a semiconductor fabrication process using the nitrogen concentration.
11. A computer-implemented method for analysis of a specimen, comprising:
determining a thickness of a nitrided oxide gate dielectric formed on the specimen from reflectometric data generated by measurement of the specimen at a visible wavelength;
determining an index of refraction of the nitrided oxide gate dielectric from the thickness and spectroscopic ellipsometric data generated by measurement of the specimen; and
determining a nitrogen concentration of the nitrided oxide gate dielectric from the index of refraction.
12. The method of claim 11, wherein the spectroscopic ellipsometric data is generated at wavelengths from about 220 nm to about 900 nm.
13. The method of claim 11, wherein the spectroscopic ellipsometric data is generated at wavelengths from about 190 nm to about 300 nm.
14. The method of claim 11, wherein the spectroscopic ellipsometric data is generated at vacuum ultraviolet wavelengths.
15. The method of claim 11, wherein the reflectometric data and the spectroscopic ellipsometric data is generated at multiple locations on the specimen, the method further comprising determining the nitrogen concentration at the multiple locations and determining a within wafer uniformity of the nitrogen concentration.
16. The method of claim 11, further comprising determining one or more parameters of a semiconductor fabrication process based on the nitrogen concentration.
17. The method of claim 11, further comprising monitoring one or more parameters of a semiconductor fabrication process using the nitrogen concentration.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A magnetic memory device in which:
a tunnel magnetic resistance effect element is configured by stacking a fixed magnetic layer whose direction of magnetization is fixed, a tunnel barrier layer, and a free magnetic layer whose direction of magnetization is variable in this order; and
a second wiring is arranged opposite to the tunnel magnetic resistance effect element via an insulating layer on the side opposite a first wiring electrically connected to the tunnel magnetic resistance effect element, wherein
a third wiring for reading electrically connected to the tunnel magnetic resistance effect element on the same side as the second wiring with respect to the tunnel magnetic resistance effect element is disposed within a connecting hole which is formed in an electrically isolated state with the second wiring while penetrating at least part of an area of the second wiring.
2. The magnetic memory device as cited in claim 1, wherein
an insulating layer is formed on the sidewall of the connecting hole; and
the third wiring is buried at the inside of the insulating layer.
3. The magnetic memory device as cited in claim 1, wherein
the connecting hole penetrates the area of the second wiring.
4. The magnetic memory device as cited in claim 1, wherein
the second wiring is divided at least by the magnetic memory element, into both sides of the connecting hole.
5. The magnetic memory device as cited in claim 1, wherein
there is disposed a fourth wiring for writing that is electrically isolated from the tunnel magnetic resistance effect element on the same side as the first wiring with respect to the tunnel magnetic resistance effect element.
6. The magnetic memory device as cited in claim 1, wherein
the first wiring acts as the wiring for reading and the wiring for writing.
7. The magnetic memory device as cited in claim 1, wherein
the first wiring and the second wiring are arranged to cross each other; and
the tunnel magnetic resistance effect element is arranged at the cross-point.
8. The magnetic memory device as cited in claim 1, wherein
the tunnel barrier layer is interposed between the fixed magnetic layer and the free magnetic layer, so that information is written by magnetizing the free magnetic layer in a predetermined direction with a magnetic field induced by passing current to the first or fourth wiring and the second wiring; and
the written information is read through the third wiring by tunnel magnetic resistance effect via the tunnel barrier layer.
9. A manufacturing method of a magnetic memory device in which:
a tunnel magnetic resistance effect element is configured by stacking a fixed magnetic layer whose direction of magnetization is fixed, a tunnel barrier layer, and a free magnetic layer whose direction of magnetization is variable in this order;
a second wiring is arranged opposite to the tunnel magnetic resistance effect element via an insulating layer on the side opposite a first wiring electrically connected to the tunnel magnetic resistance effect element; and
a third wiring for reading electrically connected to the tunnel magnetic resistance effect element on the same side as the second wiring with respect to the tunnel magnetic resistance effect element is disposed within a connecting hole which is formed in an electrically isolated state with the second wiring while penetrating at least part of an area of the second wiring, comprising:
a step of forming the second wiring;
a step of forming the connecting hole which penetrate at least the part of the area of the second wiring; and
a step of forming the third wiring within the connecting hole in an electrically isolated state with the second wiring.
10. The manufacturing method of the magnetic memory device as cited in claim 9, wherein
an insulating layer is formed on the sidewall of the connecting hole; and
the third wiring is buried at the inside of the insulating layer.
11. The manufacturing method of the magnetic memory device as cited in claim 9, wherein
the connecting hole penetrates the area of the second wiring.
12. The manufacturing method of the magnetic memory device as cited in claim 9, wherein
the second wiring is divided at least by the magnetic memory element, into both sides of the connecting hole.
13. The manufacturing method of the magnetic memory device as cited in claim 9, wherein
there is disposed a fourth wiring for writing that is electrically isolated from the tunnel magnetic resistance effect element on the same side as the first wiring with respect to the tunnel magnetic resistance effect element.
14. The manufacturing method of the magnetic memory device as cited in claim 9, wherein
the first wiring acts as the wiring for reading and the wiring for writing.
15. The manufacturing method of the magnetic memory device as cited in claim 9, wherein
the first wiring and the second wiring are arranged to cross each other; and
the tunnel magnetic resistance effect element is arranged at the cross-point.
16. The manufacturing method of the magnetic memory device as cited in claim 9, wherein
the tunnel barrier layer is interposed between the fixed magnetic layer and the free magnetic layer, so that information is written by magnetizing the free magnetic layer in a predetermined direction with a magnetic field induced by passing current to the first or fourth wiring and the second wiring; and
the written information is read through the third wiring by tunnel magnetic resistance effect via the tunnel barrier layer.