1. A plasma deposition method, comprising:
in a plasma reactor, generating a discharge plasma comprising metal ions, the discharge plasma comprising a grounding path; and
controlling properties of the plasma by modifying the grounding path of the discharge plasma.
2. The method of claim 1, wherein the modifying of the grounding path comprises switching between float and ground one or more grounding shields in an array of switched grounding shields in the plasma reactor, wherein the grounding shields in the array are electrically isolated from each other and vary in surface area and location relative to a substrate support in the plasma reactor, and wherein at least one of the switched shields of the array is grounded.
3. The method of claim 1, wherein the modifying of the grounding path comprises varying resistance to ground of a variable grounding shield in conjunction with a grounded shield electrically isolated from the variable grounding shield.
4. The method of claim 3, wherein the grounding of the variable grounding shield is controlled by adjustment of a potentiometer.
5. The method of claim 1, further comprising positioning a partially fabricated IC device substrate having exposed recessed features for filling within the plasma reactor process chamber, and at least partially filling the recessed features with the metal species of the plasma.
6. The method of claim 5, wherein no substantial substrate damage occurs.
7. The method of claim 6, wherein the metal is copper.
8. The method of claim 7, wherein the features are filled void-free.
9. The method of claim 1, wherein the controlled plasma properties comprise at least one property selected from the group consisting of ED ratio, self-sputtering rate and energy distribution of metal ions of the plasma flux.
10. The method of claim 1, wherein the properties of the plasma are controlled without application of RF bias.
11. The method of claim 1, wherein the properties of the plasma are controlled solely by modifying the grounding path of the discharge plasma.
12. The method of claim 1, wherein the discharge plasma is a DC discharge plasma.
13. The method of claim 1, wherein the plasma reactor comprises a hollow cathode magnetron.
14. The method of claim 1, wherein the metal ions of the plasma flux have a substantially uniform energy distribution.
15. The method of claim 1, wherein an ED ratio and self-sputtering rate of the plasma flux are set by modifying the grounding path of the plasma and then fixed during the deposition.
16. The method of claim 1, wherein the ED ratio is modulated by modifying the grounding path of the plasma between lower and higher ED ratios during the course of the deposition.
17. A plasma deposition apparatus, comprising:
a processing chamber;
a deposition substrate support;
a metal ion discharge plasma source;
a plurality of grounding shields, the grounding shields configured to control properties of the discharge plasma by modifying the grounding path of the discharge plasma.
18. The apparatus of claim 17, wherein the plurality of shields comprises switching an array of switched grounding shields in the plasma reactor, wherein the grounding shields in the array are electrically isolated from each other and vary in surface area and location relative to the substrate support, and wherein at least one of the switched shields of the array is grounded.
19. The apparatus of claim 17, wherein the plurality of shields comprises a variable grounding shield in conjunction with a grounded shield electrically isolated from the variable grounding shield.
20. The apparatus of claim 19, further comprising a potentiometer operatively connected to the variable grounding shield.
21. The apparatus of claim 17, further comprising a metal target.
22. An apparatus for filling recessed features on a wafer substrate, comprising:
(a) a process chamber configured to hold a metal target;
(b) a wafer support for holding the wafer in position during deposition of a metal-containing material; and
(c) a controller comprising program instructions for generating a discharge plasma comprising metal ions in the process chamber, the discharge plasma comprising a grounding path, and controlling properties of the plasma by modifying the grounding path of the discharge plasma.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An antenna structure, comprising:
a radiation element;
a grounding element, comprising:
a first grounding sub-element; and
a second grounding sub-element, coupled to the first grounding sub-element, having a loop structure, wherein one section of the loop structure overlaps a first end of the radiation element and is at a designated distance from the first end of the radiation element in a designated direction; and
a feeding point, coupled between a second end of the radiation element and the first grounding sub-element.
2. The antenna structure of claim 1, wherein the second grounding sub-element is located on a Y-Z plane, and a projection of the radiation element projected on an X-Y plane partially overlaps a projection of the second grounding sub-element projected on the X-Y plane.
3. The antenna structure of claim 1, wherein the second grounding sub-element comprises a plurality of sections coupled to each other to construct the loop structure, and a joint point of a first section and a second section of the plurality of sections forms a right angle.
4. The antenna structure of claim 1, wherein the second grounding sub-element comprises a plurality of sections coupled to each other to construct the loop structure, and a joint point of a first section and a second section of the plurality of sections forms an oblique angle.
5. The antenna structure of claim 1, wherein the second grounding sub-element comprises a plurality of sections coupled to each other to construct the loop structure, and a joint point of a first section and a second section of the plurality of sections forms an arc angle.
6. The antenna structure of claim 1, wherein the loop structure comprises a plurality of loops.
7. The antenna structure of claim 1, further comprising an active component disposed between the second end of the radiation element and the feeding point.
8. The antenna structure of claim 7, wherein the active component is a low-noise amplifier (LNA).
9. The antenna structure of claim 1, wherein the radiation element forms an L shape.
10. An antenna structure, comprising:
a radiation element;
a grounding element, comprising:
a first grounding sub-element; and
a second grounding sub-element, coupled to the first grounding sub-element, having a plurality of sections coupled to each other, wherein a designated section of the plurality of sections overlaps the radiation element and is at a first designated distance from the radiation element in a designated direction, and the designated section is at a second designated distance from the first grounding sub-element in a direction opposite to the designated direction; and
a feeding point, coupled between a second end of the radiation element and the first grounding sub-element.
11. The antenna structure of claim 10, wherein there is a first current flowing through the radiation element and a second current flowing through the designated section, and a direction of the first current is opposite to a direction of the second current.
12. The antenna structure of claim 11, wherein the designated section is parallel to the radiation element and the first grounding sub-element.
13. A wireless communication apparatus, comprising:
a housing; and
an antenna structure, disposed inside the housing and parallel to a first plane of the housing, the antenna structure comprising:
a radiation element;
a grounding element, comprising:
a first grounding sub-element; and
a second grounding sub-element, coupled to the first grounding sub-element, having a loop structure, wherein one section of the loop structure overlaps a first end of the radiation element and is at a designated distance from the first end of the radiation element in a designated direction; and
a feeding point, coupled between a second end of the radiation element and the first grounding sub-element.
14. The wireless communication apparatus of claim 13, wherein the second grounding sub-element of the antenna structure and the first plane of the housing are located on a Y-Z plane, and a projection of the radiation element projected on an X-Y plane partially overlaps a projection of the second grounding sub-element projected on the X-Y plane.
15. The wireless communication apparatus of claim 13, wherein the second grounding sub-element comprises a plurality of sections coupled to each other to construct the loop structure, and a joint point of a first section and a second section of the plurality of sections forms a right angle.
16. The wireless communication apparatus of claim 13, wherein the second grounding sub-element comprises a plurality of sections coupled to each other to construct the loop structure, and a joint point of a first section and a second section of the plurality of sections forms an oblique angle.
17. The wireless communication apparatus of claim 13, wherein the second grounding sub-element comprises a plurality of sections coupled to each other to construct the loop structure, and a joint point of a first section and a second section of the plurality of sections forms an arc angle.
18. The wireless communication apparatus of claim 13, wherein the loop structure comprises a plurality of loops.
19. The wireless communication apparatus of claim 13, wherein the antenna structure further comprises an active component disposed between the second end of the radiation element and the feeding point.
20. The wireless communication apparatus of claim 19, wherein the active component is a low-noise amplifier (LNA).