1. A method of fabricating a semiconductor device comprising:
forming a metal line in a first dielectric layer;
forming a second dielectric layer over the metal line;
forming a first conductive via in the second dielectric layer and on the metal line;
forming a second conductive via in the second dielectric layer and on the metal line at a distance from the first conductive via;
forming an electrically isolated conductive via in the second dielectric layer and on the metal line between the first and second conductive via;
forming a first conductive line over in contact with the first conductive via;
forming a second conductive line over and in contact with the second conductive via;
wherein an electric path is established by the first conductive line, the first conductive via, the metal line, the second conductive via, and the second conductive line; and
wherein the electrically isolated conductive via remains electrically isolated during device operation and mitigates void formation in the metal line.
2. The method of claim 1, further comprising forming a third dielectric layer over the second dielectric layer, in which the first conductive line and the second conductive line are formed.
3. The method of claim 1, further comprising forming an electrically isolated conductive line on the electrically isolated conductive via, wherein the electrically isolated conductive line remains electrically isolated during device operation.
4. The method of claim 1, further comprising forming a capping layer on the metal line prior to forming the second dielectric layer.
5. The method of claim 4, wherein the capping layer is comprised of SiCN.
6. The method of claim 1, wherein forming the first conductive via comprises selectively etching the second dielectric layer, forming a barrier layer, and depositing a conductive material.
7. The method of claim 1, wherein the metal line comprises an existing void and movement of the void toward the first conductive via is mitigated by the electrically isolated conductive via.
8. The method of claim 1, further comprising defining a cathode portion of the metal line proximate to the first conductive via and an anode portion of the metal line proximate to the second conductive via, wherein electrons travel from the cathode portion to the anode portion.
9. The method of claim 1, wherein the metal line is comprised of copper.
10. The method of claim 1, further comprising forming one or more additional isolated conductive vias in the second dielectric layer and on the metal line in between the first and second conductive vias.
11. The method of claim 1, wherein the first conductive line and the second conductive line are formed in the second dielectric layer in a dual-damascene process concurrently with the first conductive via, the second conductive via, and the electrically isolated conductive via.
12. A method of fabricating a semiconductor device comprising:
providing a semiconductor substrate;
forming a dielectric layer over the substrate;
forming a metal line within the dielectric layer having a cathode portion and an anode portion, wherein electrons travel from the cathode portion to the anode portion during operation;
forming a first conductive region in electrical contact with the cathode portion of the metal line;
forming a second conductive region in electrical contact with the anode portion of the metal line; and
forming an electrically isolated conductive region in contact with the metal line, wherein the electrically isolated conductive region remains electrically isolated during device operation and mitigates void formation about the cathode portion of the metal line andor void migration.
13. The method of claim 12, wherein forming the metal line comprises forming a copper line.
14. The method of claim 12, further comprising forming two or more electrically isolated conductive regions in contact with the metal line which remain electrically isolated during device operation.
15. The method of claim 12, wherein the isolated conductive region is formed below the metal line.
16. The method of claim 12, wherein the isolated conductive region is formed above the metal line.
17. The method of claim 12 wherein the dielectric layer is a second dielectric layer, further comprising forming a first dielectric layer on the substrate prior to forming the second dielectric layer, wherein the first dielectric layer is at least a portion of an inter-metal dielectric layer, the second dielectric layer is an inter-layer dielectric layer, and the isolated conductive region is formed within the second dielectric layer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
We claim:
1. A method for producing a thyristor, which comprises:
providing a first wafer and a second wafer;
producing a first zone of a first conductivity type serving as an anode on the first wafer;
producing a first section of a second zone of a second conductivity type serving as a base on the first wafer;
producing a second section of the second zone of the second conductivity type serving as the base on the second wafer;
producing a third zone of the first conductivity type on the second wafer;
producing a fourth zone of the second conductivity type serving as a cathode on the second wafer.
producing a field stop layer in a region at an inner surface of one of the first wafer and the second wafer; and
connecting the first wafer to the second wafer such that the inner surface of the first wafer and the inner surface of the second wafer lie one on top of another.
2. The method according to claim 1, which comprises producing the field stop zone by ion implantation into a layer in a region at the inner surface of one of the first wafer and the second wafer and implanted atoms are electrically activated by a subsequent thermal treatment.
3. The method according to claim 1, which comprises producing the field stop zone by ion implantation into a layer in a region at the inner surface of one of the first wafer and the second wafer and implanted atoms are electrically activated and in diffused by a subsequent thermal treatment.
4. The method as claimed according to claim 2, which comprises carrying out the ion implantation out with an ion dose of from 1012 cm2 to 1013 cm2.