What is claimed is:
1. A spray data acquisition system comprising:
a pumping device responsive to an applied force to generate a spray plume along a spray axis;
a spray pump actuator capable of providing a pumping force to the pumping device;
an illumination device for illuminating the spray plume along at least one geometric plane that intersects the spray plume; and,
an imaging device for acquiring data representative of an interaction between the illumination and the spray plume along the at least one geometric plane.
2. An apparatus according to claim 1, wherein the acquired data is representative of a sequential set of images.
3. An apparatus according to claim 2, wherein a first time-sequential set of images corresponds to an axial cross-sectional density characteristic along a first geometric plane substantially normal to a flow direction centerline.
4. An apparatus according to claim 3, wherein a second time-sequential set of images corresponds to a longitudinal density characteristic along a second geometric plane substantially parallel to and intersecting the flow direction centerline.
5. An apparatus according to claim 1, wherein the interaction between the illumination and the spray plume includes optical scattering.
6. An apparatus according to claim 1, wherein the interaction between the illumination and the spray plume includes optical absorption.
7. An apparatus according to claim 1, wherein the imaging device includes a digital imaging system for generating and recording the image data.
8. An apparatus according to claim 7, wherein the digital imaging system includes an image sampling rate of approximately 500 images per second.
9. An apparatus according to claim 1, wherein the illumination device includes a laser system having a fan-shaped output pattern.
10. An apparatus according to claim 9, wherein the fan-shaped output pattern includes a fan angle of approximately 45 degrees, and a laser line thickness of approximately one millimeter at approximately the centerline of the emitted spray.
11. An apparatus according to claim 9, wherein the laser system includes a 4 watt, 810 nm laser output.
12. A spray data acquisition system according to claim 1, wherein the illumination device illuminates the spray plume along a second geometric plane that intersects the spray plume, and the imaging device acquires data representative of a second interaction between the illumination and the spray plume along a second geometric plane.
13. A spray data acquisition system according to claim 12 wherein the first and the second geometric planes are substantially orthogonal.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for fabricating a metal silicide, comprising:
providing a substrate, where the substrate comprises a dielectric layer already formed thereon;
forming a conductive layer on the dielectric layer;
forming an adhesion layer on the conductive layer; and
forming a metal silicide layer on the adhesion layer.
2. The method of claim 1, wherein the adhesion layer includes a nitrogen rich film.
3. The method of claim 1, wherein the adhesion layer is formed by chemical vapor deposition to dope nitrogen ions in situ, wherein a concentration of the nitrogen ions is about 21018 atomscm3 to 51019 atomscm3.
4. The method of claim 2, wherein the adhesion layer is about 5 angstroms to 40 angstroms thick.
5. The method of claim 5, wherein the adhesion layer includes a nitrogen ion implanted layer.
6. The method of claim 5, wherein the adhesion layer is formed by an ion implantation process using a power of about 1000 electron volts to about 5000 electron volts to implant nitrogen ions into the conductive layer, wherein a concentration of the nitrogen ions is about 21018 atomscm3 to 51019 atomscm3.
7. The method of claim 5, wherein the adhesion layer is about 20 angstroms thick.
8. The method of claim 1, wherein the metal silicide layer is formed with a material selected from the group consisting of titanium silicide (TiSix), tungsten silicide (WSix), tantalum silicide (TaSix), molybdenum silicide (MoSix), cobalt silicide (CoSix) and nickel silicide (NiSix).
9. The fabrication method of claim 1, wherein the conductive layer comprises polysilicon.
10. A fabrication method of a metal silicide layer, comprising:
providing a substrate, wherein the substrate already comprises a dielectric layer formed thereon;
forming a conductive layer on the dielectric layer;
performing a deglaze process on the conductive layer;
forming an adhesion layer on the conductive layer and forming a metal silicide layer on the adhesion layer.
11. The method of claim 10, wherein the deplaze process comprises performing an etching using a hydrofluoric acid gas.
12. The method of claim 10, wherein the adhesion layer includes a nitrogen rich film.
13. The method of claim 12, wherein the adhesion layer is formed by a chemical vapor deposition method to dope nitrogen ions in-situ, wherein a concentration of the nitrogen ions is about 21018 atomscm3 to 51019 atomscm3.
14. The method of claim 12, wherein the adhesion layer is about 5 angstroms thick to 40 angstroms thick.
15. The method of claim 10, wherein the adhesion layer includes a nitrogen ion implanted layer.
16. The method of claim 15, wherein the adhesion layer is formed by an ion implantation process using a power of about 1000 electron volts to about 5000 electron volts to implant nitrogen ions to the conductive layer, wherein a concentration of the nitrogen ions is about 21018 atomscm3 to 51019 atomscm3.
17. The method of claim 15, wherein the adhesion layer is about 20 angstroms thick.
18. The method of claim 10, where the metal silicide layer is formed with a material selected from the group consisting of titanium silicide (TiSix), tungsten silicide (WSix), tantalum silicide (TaSix), molybdenum silicide (MoSix), cobalt silicide (CoSix) and nickel silicide (NiSix).
19. The method of claim 10, wherein the conductive layer includes polysilicon.