1. A vehicle power adapter for providing frequency modulated (FM) radio frequency signals from an external device to an FM receiver in a vehicle using the vehicle’s existing wiring system without modification of the vehicle’s electrical connections behind the vehicle’s dashboard and without over-the-air transmission of the FM signals, the vehicle power adapter comprising:
a main body configured to be received in a cigarette lighter socket of the vehicle, the main body having a first connector to receive direct current (DC) power from the vehicle power system when inserted into the vehicle cigarette lighter socket;
a coaxial cable having a first end connected to the main body and a second end extending therefrom; and
a second connector connected to the second end of the coaxial cable and configured for detachable connection to an external device;
wherein the main body comprises an amplifier circuit configured to receive the FM signals from the external device via the coaxial cable and to amplify the FM signals to a selected signal level that allows for their transmission to the FM receiver in the vehicle via the vehicle’s existing and unmodified wiring system for reception and playback by the FM receiver, the main body being configured to provide the amplified FM signals to the vehicle’s existing and unmodified wiring system when inserted into the cigarette lighter socket.
2. A vehicle power adapter as claimed in claim 1, wherein the main body further comprises a DC to DC converter configured to convert the DC power that is received from the vehicle power system when the vehicle power adapter is inserted into the cigarette lighter socket to a selected DC signal, and the coaxial cable is configured to deliver the selected DC signal to the external device.
3. A vehicle power adapter as claimed in claim 2, wherein the coaxial cable is configured to carry the selected DC signal to the external device while carrying the FM signals from the external device to the main body.
4. A vehicle power adapter as claimed in claim 2, wherein the DC to DC converter comprises filters to reject stray FM radiation.
5. A vehicle power adapter as claimed in claim 1, further comprising an attenuator circuit configured to attenuate the FM signals received from the external device to a selected level that complies with at least one of Federal Communications Commission Part 15 and regulatory limits for an intentional radiator.
6. A vehicle power adapter as claimed in claim 1, wherein the amplifier circuit is configured to provide matched impedance to the coaxial cable, amplify the FM signals from signal loss due to the coaxial cable, and provide isolation to the cigarette lighter socket from unwanted signal reflection that could cause unwanted radiation of the FM signals.
7. A vehicle power adapter as claimed in claim 1, wherein the main body consists of a unitary housing enclosing the amplifier.
8. A vehicle power adapter as claimed in claim 1, wherein the main body is configured to provide the amplified FM signals to the vehicle’s existing and unmodified wiring system for output by the FM receiver in the vehicle without additional components or modifications to the vehicle’s wiring.
9. A method for providing frequency modulated (FM) radio frequency signals from an external device to an FM receiver in a vehicle via a vehicle power adapter using the vehicle’s existing wiring system without modification of the vehicle’s electrical connections behind the vehicle’s dashboard and without over-the-air transmission of the FM signals, the method comprising: receiving direct current (DC) power from the vehicle power system at a main body inserted into a cigarette lighter socket of the vehicle; receiving the FM signals from the external device at the main body via a coaxial cable having a first end connected to the main body and a second end configured to be at least detachably connected to the external device; amplifying the FM signals at the main body to a selected signal level that allows for their transmission to the FM receiver in the vehicle via the vehicle’s existing and unmodified wiring system for reception and playback by the FM receiver; and providing the amplified FM signals to the vehicle’s existing and unmodified wiring system when the main body is inserted into the vehicle cigarette lighter socket.
10. A method as claimed in claim 9, further comprises:
converting the DC power that is received from the vehicle power system when the main body is inserted into the cigarette lighter socket to a selected DC signal; and
providing the selected DC signal to the external device.
11. A method as claimed in claim 10, wherein said receiving the FM signals and said providing the selected DC signal are performed using the same coaxial cable.
12. A method as claimed in claim 11, wherein the coaxial cable is configured to carry the selected DC signal to the external device while carrying the FM signals from the external device to the main body.
13. A method as claimed in claim 9, further comprising containing the FM signals within the coaxial cable using shielding provided by the coaxial cable.
14. A method as claimed in claim 9, further comprising: providing matched impedance to the coaxial cable; amplifying the FM signals from signal loss due to the coaxial cable; and providing isolation to the cigarette lighter socket from unwanted signal reflection that could cause unwanted radiation of the FM signals.
15. A method as claimed in claim 9, further comprising attenuating the FM signals received in the main body from the external device to a selected level that complies with at least one of Federal Communications Commission Part 15 and regulatory limits for an intentional radiator.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of forming a multi-layer semiconductor structure, comprising:
(a) providing, to a first predetermined thickness, a first patterned bond film onto a first surface of a first semiconductor structure;
(b) providing, to a second predetermined thickness, a second patterned bond film onto a first surface of a second semiconductor structure;
(c) aligning the first patterned bond film of the first semiconductor structure and the second patterned bond film of the second semiconductor structure; and
(d) forming a bond between the first and second patterned bond films to provide the first and second semiconductor structures as the multi-layer semiconductor structure wherein forming the bond comprises:
applying a first predetermined force to the first and the second semiconductor structures for a first predetermined time interval;
heating the first and second semiconductor structures at a first predetermined rate to a predetermined bonding temperature;
applying a second predetermined force to the first and the second semiconductor structures for a second predetermined time interval while heating the first and second semiconductor structures at the first predetermined rate; and
applying a third predetermined force to the first and second semiconductor structures for a third predetermined time interval after reaching the predetermined bonding temperature.
2. The method of claim 1, wherein
applying the third predetermined force comprises one of:
applying the third predetermined force to a top central region of a first one of the first and second semiconductor structures;
applying the third predetermined force as a distributed force applied at a center and periphery regions of a first one of the first and second semiconductor structures;
applying the third predetermined force as a non-uniform distributed force such that more force is provided to a center region than to a periphery region of a first one of the first and second semiconductor structures; and
applying the third predetermined force as a non-uniform distributed force such that more force is provided to a periphery region than to a center region of a first one of the first and second semiconductor structures.
3. The method of claim 1, wherein aligning the first and second semiconductor structures includes:
disposing the first and second semiconductor structures on a fixture; and
maintaining a predetermined space between the first and second semiconductor structures using a plurality of spacers disposed between die first and second semiconductor structures.
4. The method of claim 3, wherein forming the bond includes:
disposing the fixture and the first and second semiconductor structures in a bonding chamber;
purging undesired impurities from the bonding chamber;
applying the first predetermined force to the first and the second semiconductor structures for the first predetermined time interval;
removing the spacers from the first and second semiconductor structures while the first and second semiconductors are under the first predetermined force;
heating the first and second semiconductor structures at a first predetermined rate to a predetermined bonding temperature;
applying the second predetermined force to the first and the second semiconductor structures for the second predetermined time interval while heating the first and second semiconductor structures at the first predetermined rate; and
applying the third predetermined force to the first and second semiconductor structures for the third predetermined time interval after reaching the predetermined bonding temperature.
5. The method of claim 4, further including evacuating the bonding chamber to a predetermined pressure.
6. The method of claim 4, further including forming a non-oxidizing ambient in the bonding chamber.
7. The method of claim 4, further including forming a non-oxidizing ambient in the bonding chamber and including hydrogen.
8. The method of claim 4, further comprising cooling the first and second semiconductor structures.
9. The method of claim 8, further comprising heating the multi-layer semiconductor structure at a predetermined temperature for a fourth predetermined time interval.
10. The method of claim 9, wherein heating the multi-layer semiconductor structure further includes annealing the multi-layer semiconductor structure.
11. The method of claim 1, wherein providing the first patterned bond film includes providing at least one of a metallic bond film or an alloy bond film.
12. The method of claim 11, wherein the metallic bond film includes copper.
13. The method of claim 1, wherein providing the second patterned bond film includes providing at least one of a metallic bond film or an alloy bond film.
14. The method of claim 13, wherein the metallic bond film includes copper.
15. The method of claim 1, wherein providing the first patterned bond film onto the first surface of the first semiconductor structure includes providing the first patterned bond film onto a first surface of a first semiconductor wafer structure.
16. The method of claim 1, wherein providing the second patterned bond film onto the first surface of the second semiconductor structure includes providing the second patterned bond film onto a first surface of a second semiconductor wafer structure.
17. The method of claim 1, wherein providing the first patterned bond film onto the first surface of the first semiconductor structure includes providing the first patterned bond film onto a first surface of a first semiconductor die structure.
18. The method of claim 1, wherein providing the second patterned bond film onto the first surface of the second semiconductor structure includes providing the second patterned bond film onto a first surface of a second semiconductor die structure.
19. The method of claim 1, wherein providing the first patterned bond film onto the first surface of the first semiconductor structure includes providing the first patterned bond film onto a first surface of a first semiconductor die structure and providing the second patterned bond film onto the first surface of the second semiconductor structure includes providing the second patterned bond film onto at least a portion of a first surface of a semiconductor wafer structure.
20. A method of forming a multi-layer semiconductor structure, comprising:
(a) retaining a first semiconductor structure to a second semiconductor structure such that the first and second semiconductor structures are separated by a predetermined distance;
(b) disposing the first semiconductor structure to a second semiconductor structure in a bonding chamber;
(c) purging undesirable impurities from the bonding chamber;
(d) applying a first predetermined force to the first and the second semiconductor structures for a first predetermined time interval;
(e) applying a second predetermined force to the first and the second semiconductor structures for a second predetermined time interval while heating the first and second semiconductor structures at a first predetermined rate; and
(f) applying a third predetermined force to the first and second semiconductor structures for a third predetermined time interval.
21. The method claim 20, further including:
(g) cooling the first and second semiconductor structures.
22. The method of claim 20, wherein retaining comprises:
clamping the first semiconductor structure to the second semiconductor structure using a fixture; and
inserting one or more spacers between the first and second semiconductor structures to provide the predetermined spacing.
23. The method of claim 20 wherein retaining comprises:
providing a force against at least one of the first and second semiconductor structures to maintain the first semiconductor structure the predetermined distance from the second semiconductor structure.
24. The method of claim 20, further including:
heating the multi-layer semiconductor structure at a predetermined temperature for a fourth predetermined time interval.
25. The method of claim 24, wherein heating the multi-layer semiconductor structure includes annealing the multi-layer semiconductor structure for the fourth predetermined time interval.
26. The method of claim 20, further including evacuating the bonding chamber to a predetermined pressure.
27. The method of claim 20, further including forming a non-oxidizing ambient in the bonding chamber.
28. The method of claim 20, further including forming a non-oxidizing ambient in the bonding chamber and including hydrogen.
29. The method of claim 20, wherein retaining the first semiconductor structure to the second semiconductor structure includes retaining a first semiconductor wafer structure to a second semiconductor wafer structure.
30. The method of claim 20, wherein retaining the first semiconductor structure to the second semiconductor structure includes retaining a first semiconductor die structure to a second semiconductor die structure.