1. A method of forming a semiconductor device, the method comprising:
providing a semiconductor layer;
forming a passivation layer over the semiconductor layer, wherein the passivation layer has an opening having sidewalls;
forming a fin over the semiconductor layer, wherein after forming the passivation layer the fin is within the opening;
forming a portion of a gate within the opening; and
forming spacers along the sidewalls of the opening.
2. The method of claim 1 wherein the fin is formed before forming the passivation layer.
3. The method of claim 1, further comprising forming a dummy gate over the fin; and removing the dummy gate before forming the spacers; and wherein forming the gate is performed after removing the dummy gate.
4. The method of claim 3, wherein forming the gate further comprises forming a gate electrode and a gate contact area and forming dummy gate further comprises forming a dummy structure for the gate electrode.
5. The method of claim 1, wherein forming the spacers further comprises:
depositing a dielectric layer within the opening and over the fin; and
anisotropically etching the dielectric layer to remove all portions of the dielectric layer except some portions that are adjacent the passivation layer to form the spacers, wherein the spacers have a first height and the opening of the passivation layer as a second height, wherein the first height is less than the second height.
6. The method of claim 5, further comprising:
providing a buried oxide layer over the semiconductor layer;
forming a capping layer over the fin;
forming a gate dielectric layer within the opening and over the fin, and wherein:
the forming the fin further comprising forming the fin over the buried oxide layer; and
the forming the gate further comprising forming the gate over the gate dielectric layer.
7. The method of claim 1, wherein forming the passivation layer further comprises:
depositing a passivation layer;
forming a masking layer over the passivation layer, wherein the masking layer has a pattern; and
etching the passivation layer using the masking layer to form the opening in the passivation layer.
8. The method of claim 1, wherein forming a portion of the gate within the opening further comprises:
forming the portion of the gate so that the portion of the gate has a top portion and a bottom portion, wherein:
the top portion is substantially contiguous with a top of the passivation layer and has a first dimension;
the bottom portion is adjacent the spacers and has a second dimension between the spacers;
the second dimension is parallel to the first dimension; and
the first dimension is greater than the second dimension.
9. The method of claim 1, wherein:
forming the fin further comprising forming the fin with a first height; and
forming the passivation layer further comprises forming the passivation layer with a second height, wherein the second height is greater than the first height.
10. A method of forming a semiconductor device, comprising:
forming a semiconductor layer;
forming a passivation layer over the semiconductor layer, wherein the passivation layer has an opening and wherein the opening has sidewalls;
forming a fin over the semiconductor layer, wherein after forming the passivation layer the fin is within the opening of the passivation layer;
forming a spacer adjacent the sidewalls of the opening of the passivation; and
forming a gate, wherein a portion of the gate is within the opening of the passivation layer.
11. The method of claim 10, wherein the fin is formed before forming the passivation layer.
12. The method of claim 10, wherein forming the gate further comprises forming a gate electrode and a gate contact area.
13. The method of claim 10, wherein forming the spacer further comprises:
depositing a dielectric layer within the opening of the passivation layer and over the fin; and
anisotropically etching the dielectric layer to remove at least portions of the dielectric layer that are over the fin and at least portions of the dielectric layer that are adjacent the fin to form the spacer along the sidewalls of the opening of the passivation layer.
14. The method of claim 10, further comprising forming a dummy gate over the fin; and
removing the dummy gate before forming the spacer; and wherein the forming the gate is performed after removing the dummy gate.
15. The method of claim 10, wherein the forming the passivation layer further comprises:
depositing a passivation layer;
forming a masking layer over the passivation layer, wherein the masking layer has a pattern; and
etching the passivation layer using the masking layer to form the opening of the passivation layer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A filter cartridge comprising:
a) filter media and
b) a housing surrounding the media, the housing having an outlet and being sealed such that all fluid flow out of the outlet must first enter the cartridge and pass through the media;
c) the housing having multiple inlet flow paths configured so that fluid impinging on the housing is diffused as it enters the cartridge and is prevented from flowing directly towards the filter media.
2. The filter cartridge of claim 1 wherein the housing comprises a generally tubular diffuser member and two end caps.
3. The filter cartridge of claim 2 wherein the generally tubular diffuser member comprises louvered openings.
4. The filter cartridge of claim 3 wherein the louvered openings comprise a plurality of stamped tabs extending inwardly and towards a first end of the cartridge and a plurality of stamped tabs extending inwardly and toward a second end of the cartridge opposite the first end.
5. The filter cartridge of claim 2 wherein the diffuser member comprises a strip of stamped louvered material formed into a tube shape.
6. The filter cartridge of claim 1 wherein the filter media comprises a pleated, multi-layer material.
7. The filter cartridge of claim 2 further comprising a band of fluid permeable material around the central section of the filter media holding the filter media from contacting the tubular diffuser member.
8. The filter cartridge of claim 2 wherein at least one of the end caps comprises an extension element configured to interfere with internal structure of a chamber to prevent the cartridge from spinning inside the chamber.
9. The filter cartridge of claim 1 wherein the filter media comprises a composition including glass fibers and binder formed into a layer and supported by a support layer of spun bond thermoplastic fibers and metallic wire screen.
10. A filter cartridge comprising:
a) a center support tube having flow openings into a central portion thereof and an outlet there from;
b) pleated filter media arranged in folds extending outwardly from the center support tube;
c) an outer tubular diffuser member surrounding the pleated filter media, the diffuser member providing non-direct flow openings from outside the cartridge to the filter media; and
d) end caps sealing the cartridge such that all flow into the cartridge is through the non-direct flow openings in the diffuser member.
11. The filter cartridge of claim 10 further comprising a fluid permeable band around a central section of the pleated filter media, holding the pleated material to a smaller diameter than the inner diameter of the tubular diffuser member, thereby assuring a gap between the extremities of the pleats of the filter media and the tubular diffuser member to further diffuse fluid flow.
12. The filter cartridge of claim 10 wherein the non-direct flow openings are provided by openings stamped in the material making up the diffuser member such that the openings include louvers.
13. The filter cartridge of claim 12 wherein the louvers comprise alternating columns of oppositely directed louvers.
14. The filter cartridge of claim 10 wherein the non-direct flow openings in the diffuser member provide at least about 25% open area.
15. A combination of a filter cartridge and a chamber containing the filter cartridge,
a) the chamber having an inlet and an outlet and being sized to house the cartridge, the inlet and cartridge being positioned with respect to each other such that flow through the inlet into the chamber directly impinges on the cartridge,
b) the cartridge comprising:
i) filter media and
ii) a housing surrounding the media, the housing having an outlet connected to the chamber outlet and being sealed such that all fluid flow out of the chamber must first enter the cartridge and pass through the media;
iii) the housing having multiple inlet flow paths configured so that fluid impinging on the housing is diffused as it enters the cartridge and is prevented from impinging directly on the filter media.
16. The combination of claim 15 wherein the chamber includes at least one internal rib and the cartridge contains at least one extension element, the extension element and rib being configured such that the cartridge is prevented from spinning inside the chamber due to impingement of fluid on the cartridge from the chamber inlet by interference between the rib and the extension element.
17. The combination of claim 15 wherein the extension element comprises a radially extending tab.
18. The combination of claim 15 wherein the extension element comprises an axially extending pin.
19. A method of filtering fluid comprising:
a) forcing fluid through an inlet into a chamber containing a filter cartridge, the fluid flowing through the inlet and impinging directly on the filter cartridge;
b) passing the fluid into the cartridge through multiple inlet flow paths configured so that fluid impinging on the housing is diffused as it enters the cartridge;
c) filtering the fluid through filter media inside the cartridge; and;
d) passing filtered fluid out of the cartridge through a cartridge outlet in fluid communication with a chamber outlet.
20. The method of claim 19 wherein the fluid comprises jet fuel.
21. Tile method of claim 19 wherein the fluid is forced into the chamber by a fuel pump.