1. A system, comprising:
an application portal selectively providing access to items of a plurality of remote applications, wherein at least one of the items is related to more than one of the remote applications; and
an authorization layer that is included in the portal and that includes a map indicating that a user is permitted to access at least one of the items.
2. The system of claim 1, wherein the items include at least one of: a method in an application programming interface (API), a set of menu items, and a webpage.
3. The system of claim 1, further comprising a portal user interface included in the portal, whereby at least one of the items may be accessed through the portal user interface.
4. The system of claim 1, wherein the authorization layer is selectively synchronized with the remote applications, whereby the map is updated concerning information about at least one of the items that the user is permitted to access.
5. The system of claim 1, wherein the authorization layer is selectively synchronized with one or more remote portals, whereby the map is updated concerning information about at least one of the items that the user is permitted to access.
6. The system of claim 1, further comprising an administration interface for providing or updating information about at least one of the items that the user is permitted to access.
7. The system of claim 1, further comprising a remote computer connected to the portal by a network, whereby the user selectively accesses the portal user interface.
8. A method, comprising:
selectively accessing items related to a plurality of remote applications on behalf of a user, wherein at least one of the items is related to more than one of the remote applications; and
determining whether the user is associated with at least one of the items in a map.
9. The method of claim 8, wherein the items include at least one of: a method in an application programming interface (API), a set of menu items, and a webpage.
10. The method of claim 8, further comprising providing a portal user interface to a user.
11. The method of claim 8, further comprising selectively receiving updates from the remote applications concerning information about at least one of the items that the user is permitted to access.
12. The method of claim 8, further comprising selectively receiving updates from one or more remote portals concerning information about at least one of the items that the user is permitted to access.
13. The method of claim 8, further comprising selectively authorizing the user to access the at least one of the items.
14. The method of claim 8, further comprising using an administration interface for providing or updating information about at least one of the items that the user is permitted to access.
15. The method of claim 8, further comprising accessing the one or more remote applications via a network.
16. The method of claim 8, tangibly embodied on a computer-readable medium as a set of computer-executable instructions.
17. A system, comprising:
a first portal selectively providing a user access to items of a plurality of remote applications, wherein at least one of the items is related to more than one of the remote applications;
a portal user interface included in the first portal, whereby at least one of the items may be accessed through the portal user interface;
an authorization layer that is included in the first portal and that includes a map whereby it may be determined whether the user is permitted to access at least one of the items; wherein the data access layer is selectively synchronized with the remote applications, whereby the map is updated concerning information about at least one of the items that the user is permitted to access; and
a second portal selectively providing access to at least one of the remote applications, including at least one of the items.
18. The system of claim 17, further comprising a network that connects the first portal, the second portal, and the remote applications.
19. The system of claim 17, wherein the items include at least one of: a method in an application programming interface (API), a set of menu items, and a webpage.
20. The system of claim 17, wherein the authorization layer is selectively synchronized with the remote applications, whereby the map is updated concerning information about at least one of the items that the user is permitted to access.
21. The system of claim 17, wherein the authorization layer is selectively synchronized with the second portal, whereby the map is updated concerning information about at least one of the items that the user is permitted to access.
22. The system of claim 17, further comprising an administration interface for providing or updating information about at least one of the items that the user is permitted to access.
23. The system of claim 17, further comprising a remote computer connected to the first portal by a network, whereby the user selectively accesses the portal user interface.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of forming two devices comprising a heterojuncture bipolar transistor and a field effect transistor (FET) connected by metal wires on a same wiring level, the metal wire of the heterojuncture bipolar transistor being formed by selectively forming a metal cap layer on copper wiring structures, while blocking the formation of the metal cap layer on a metal wiring of the FET.
2. The method of claim 1, wherein the copper wiring structures are formed electrically connected to an emitter, collector and base of the heterojuncture bipolar transistor.
3. The method of claim 1, wherein the metal cap layer is CoWP which is selectively deposited on the copper wiring structures.
4. The method of claim 1, wherein the metal cap layer is TaN or TiN deposited in trenches etched into the copper wiring structures.
5. The method of claim 2, wherein the selectively forming comprises etching the copper wiring structures to form trenches and selectively depositing the metal cap layer in the trenches.
6. The method of claim 5, further comprising masking the wiring layer comprising a copper wiring structure of the FET during the selectively depositing the metal cap layer in the trenches.
7. The method of claim 2, wherein the metal wiring is a copper layer, and further comprising protecting the copper layer of the FET with a mask, wherein the selectively forming the metal cap layer includes depositing CoWP selectively only on the copper wiring structures.
8. The method of claim 2, further comprising:
depositing a resist on the copper wiring structures and the metal wiring comprising a copper layer of the FET;
patterning the resist to expose a surface of the copper wiring structures, while the copper layer of the FET remains masked by the resist; and
forming a trench in the copper wiring structures, wherein the selectively forming the metal cap layer on the copper wiring structures includes depositing metal in the trenches.
9. The method of claim 2, further comprising:
depositing a masking layer of SiCN on the copper wiring structures and the metal wiring comprising a copper layer of the FET;
patterning the masking layer to expose the copper wiring structures,
wherein the resist remains on the copper cap layer of the FET; and
the selectively forming the metal cap layer includes depositing a selective metal on the exposed copper wiring structures.
10. The method of claim 9, further comprising stripping the exposed copper wiring structures with Dilute Hydrofluoric Acid (DHF) in an oxygen free environment so as to not corrode the exposed copper wiring structures.
11. The method of claim 1, wherein the selectively depositing comprises:
depositing a layer of Sn on the metal cap layer and spaces therebetween;
annealing the Sn layer; and
removing unreacted Sn on the spaces by a wet etching process to selectively form the metal cap layer on the copper wiring structures.
12. The method of claim 1, wherein the selectively depositing comprises providing a mask over the metal wiring comprising a metal layer of copper on the second of the two devices, and depositing the metal cap layer on the copper wiring structures of a first device of the two devices.
13. The method of claim 12, wherein the providing the mask comprising providing a mask over the metal layer on a second of the two devices and the metal cap layer on the copper wiring structures of the first device, and removing the mask over the metal layer on the second device, prior to the depositing.
14. The method of claim 13, wherein the mask is a photoresist layer which is removed over the metal cap layer.
15. The method of claim 14, wherein the copper wiring structures are etched using dilute sulfuric acidhydrogen peroxide (DSP) solution to form a trench.
16. The method of claim 15, wherein the trench is approximately 40 nm +\u221210% in depth.
17. The method of claim 16, wherein the metal cap layer is one of TaN, TaNTa, Ru, W, Mn, or TiN, deposited to a height of about 60 nm.
18. The method of claim 1, further comprising depositing a masking layer of SiCN over the metal wire and the copper wiring structures, and patterning the masking layer to expose the copper wiring structures.
19. The method of claim 18, wherein the metal cap layer is selectively deposited only on the exposed copper wiring structures.