1. A semiconductor device comprising a plurality of capacitors, each of the capacitors comprising:
a cylindrical lower electrode having a top open edge, the cylindrical lower electrode being formed over a substrate,
an upper electrode,
a dielectric film between the cylindrical lower electrode and the upper electrode,
a plate support extending over the substrate in a plate shape, the plate support being contacted on a side surface of the cylindrical lower electrodes at a contacting portion, and links to support the cylindrical lower electrodes, and
a pore portion provided in the plate support in a location separate from where the cylindrical lower electrode is disposed in plane view, a part of an outer circumference of the cylindrical lower electrodes being in contact with the pore portion of the plate support in plane view,
wherein a topmost open edge of the cylindrical lower electrode is located at an upper position at a top surface of the plate support, and the cylindrical lower electrode has an extending cylindrical portion above a top surface of the plate support.
2. The semiconductor device according to claim 1, wherein same plate support directly links at least more than three cylindrical lower electrodes.
3. The semiconductor device according to claim 1, wherein the pore portion is selectively formed in the plate support in a hole shape, a remaining part of the cylindrical lower electrode is in contact with the plate support in plane view.
4. The semiconductor device according to claim 3,
wherein a plurality of pore portions are arranged in a row at a first pitch extending in a first direction, the row being arranged repeatedly in a second pitch in a second direction.
5. The semiconductor device according to claim 4,
wherein neighboring rows are shifted by a predetermined distance.
6. The semiconductor device according to claim 4,
wherein neighboring rows are shifted by a half of the first pitch.
7. The semiconductor device according to claim 1, wherein a top surface of the plate support is located at lower position than a topmost edge of the cylindrical lower electrode and a lower surface of the plate support is located at a position upwards of a lowest portion of the cylindrical lower electrode.
8. The semiconductor device according to claim 1,
wherein a circular or an ellipsoidal pore portion is formed in the plate support.
9. The semiconductor device according to claim 1, wherein a total area of the pore portion provided in the plate support is smaller than a total area of the plate support separate from the pore portion.
10. A semiconductor device comprising:
a substrate;
a first electrode formed over the substrate, the first electrode comprising a cylindrical conductor;
a plate support extending over the substrate in a plate shape, and having a pore portion in a location separate from where the cylindrical conductor is disposed in plane view, a first portion of an outer circumference of the cylindrical conductor being in contact with the plate support in plane view, a second portion of the outer circumference of the cylindrical conductor being in contact with the pore portion in plane view, a top end of the second portion of the cylindrical conductor in plane view being located at an upper position at a top surface of the plate support;
a dielectric film covering a surface of the first electrode; and
a second electrode covering the dielectric film.
11. The semiconductor device according to claim 10, wherein the first electrode is a lower electrode, and at least more than three cylindrical lower electrodes are linked to a common plate support.
12. The semiconductor device according to claim 10, wherein the pore portion is selectively formed in the plate support in a hole shape, the plate support including a side surface defining the pore portion.
13. The semiconductor device according to claim 12,
wherein a plurality of pore portions are arranged in a row at a first pitch extending in a first direction, the row being arranged repeatedly in a second pitch in a second direction.
14. The semiconductor device according to claim 13,
wherein neighboring rows are shifted by a predetermined distance.
15. The semiconductor device according to claim 10, wherein a top open edge of the cylindrical conductor is located at an upper position at the top surface of the plate support.
16. The semiconductor device according to claim 10,
wherein a circular or an ellipsoidal pore portion is formed in the plate support.
17. A semiconductor device comprising:
a substrate;
a cylindrical lower electrode formed over the substrate, the cylindrical lower electrode having a sidewall portion and a bottom portion, the sidewall portion comprising a first sidewall portion and a second sidewall portion, the first sidewall portion having a first top open edge, the second sidewall portion having a second top open edge;
a dielectric film covering the cylindrical lower electrode;
an upper electrode covering the dielectric film; and
a plate support extending over the substrate in a plate shape, and having a pore portion in a location separate from where the cylindrical lower conductor is disposed in plane view, a part of the first sidewall portion of the cylindrical lower electrode being in contact with the plate support in plane view, an outer circumference of the second sidewall portion of the cylindrical electrode being in contact with the pore portion in plane view,
wherein the second top open edge of the second sidewall portion being located at an upper position than a top surface of the plate support.
18. The semiconductor device according to claim 17, wherein a same plate support directly links at least more than three cylindrical lower electrodes.
19. The semiconductor device according to claim 17, wherein a pore portion is selectively formed in the plate support in a hole shape, the plate support including a side surface defining the pore portion.
20. The semiconductor device according to claim 19,
wherein a plurality of pore portions are arranged in a row at a first pitch extending in a first direction, the row being arranged repeatedly in a second pitch in a second direction.
21. The semiconductor device according to claim 20,
wherein neighboring rows are shifted by a predetermined distance.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A multi-pane glazing unit comprising first and second panes maintained in a spaced-apart configuration by a spacer located between the first and second panes, the glazing unit having at least one between-pane space with a width, the first and second panes having confronting surfaces exposed to said between-pane space, the between-pane space being a gas or vacuum gap located inwardly of the spacer and defined by the confronting surfaces of the first and second panes such that the between-pane space is devoid of another pane, the spacer having a length and a width, the width of the spacer corresponding to the width of the between-pane space, the spacer having two side regions defining opposed ends of the spacer that are sealed respectively to said confronting surfaces of the first and second panes, the spacer having an engineered wall that extends across the width of the between-pane space so as to be substantially perpendicular to said confronting surfaces of the first and second panes, wherein the engineered wall, in moving widthwise along the engineered wall, comprises multiple corrugation fields including a first corrugation field and a second corrugation field, the first corrugation field having a first set of widthwise corrugations, the second corrugation field having a second set of widthwise corrugations, said first set of corrugations comprising corrugations that are sized differently than corrugations of said second set of corrugations, said first set of corrugations having a greater corrugation height than said second set of corrugations, such that a single wall of the spacer has multiple corrugation fields that respectively have differently sized corrugations, said single wall of the spacer being the engineered wall.
2. (canceled)
3. The multi-pane glazing unit of claim 1 wherein said first set of corrugations comprises corrugations that are at least 0.002 inch larger than corrugations of said second set of corrugations.
4. The multi-pane glazing unit of claim 1 wherein said second set of corrugations has a higher corrugation frequency than said first set of corrugations.
5. The multi-pane glazing unit of claim 4 wherein said corrugation frequency of said second set of corrugations is at least 20% higher than that of said first set of corrugations.
6. The multi-pane glazing unit of claim 1 wherein said first corrugation field includes a series of flats, each of said flats being located between two adjacent corrugation peaks.
7. The multi-pane glazing unit of claim 6 wherein each flat has a longitudinal dimension substantially matching that of a single corrugation in said second set of corrugations.
8. The multi-pane glazing unit of claim 1 wherein said first and second corrugation fields lie in the same general plane such that the engineered wall is substantially perpendicular to said confronting surfaces of said first and second panes.
9. The multi-pane glazing unit of claim 1 wherein the spacer consists of metal.
10. The multi-pane glazing unit of claim 1 wherein the spacer comprises a first metal strip defining a channel member, and the spacer comprises a second metal strip defining said engineered wall, such that said second metal strip defines both said first and second corrugation fields.
11. The multi-pane glazing unit of claim 1 wherein the multi-pane glazing unit is an insulating glass unit, and said first and second panes are glass.
12. The multi-pane glazing unit of claim 1 wherein the glazing unit is a triple glazing having three panes and two between-pane spaces.
13. The multi-pane glazing unit of claim 1 wherein the first corrugation field and the second corrugation field each comprise corrugations that are generally trapezoidal, triangular, arcuate, square, rectangular, or generally follow a sine wave.
14. A spacer for a multi-pane glazing unit, the spacer having a length and a width, the spacer having an engineered inner wall, an outer wall, and two side walls, the engineered inner wall extending in a widthwise direction, wherein the engineered inner wall, in moving in said widthwise direction along the engineered inner wall, comprises multiple corrugation fields including a first corrugation field and a second corrugation field, the first corrugation field having a first set of widthwise corrugations, the second corrugation field having a second set of widthwise corrugations, and wherein said first set of corrugations comprises corrugations that are sized differently than corrugations of said second set of corrugations, the corrugations of said first and second sets being elongated in a direction substantially normal to the two side walls of the spacer, said first set of corrugations having both a greater corrugation height and a lower corrugation frequency than said second set of corrugations, such that a single wall of the spacer has multiple corrugation fields that respectively have corrugations of different size and frequency, said single wall of the spacer being the engineered inner wall.
15. (canceled)
16. The spacer of claim 14 wherein said first set of corrugations comprises corrugations that are at least 0.002 inch larger than corrugations of said second set of corrugations.
17. (canceled)
18. The spacer of claim 14 wherein said corrugation frequency of said second set of corrugations is at least 20% higher than that of said first set of corrugations.
19. The spacer of claim 14 wherein said first corrugation field includes a series of flats, each of said flats being located between two adjacent corrugation peaks.
20. The spacer of claim 19 wherein each flat has a longitudinal dimension substantially matching that of a single corrugation in said second set of corrugations.
21. The spacer of claim 14 wherein said first and second corrugation fields lie in the same general plane such that the engineered inner wall is substantially perpendicular to the two side walls of the spacer.
22. The spacer of claim 14 wherein the spacer consists of metal.
23. The spacer of claim 14 wherein the spacer comprises a first metal strip defining a channel member, and the spacer comprise a second metal strip defining said engineered wall, such that said second metal strip defines both said first and second corrugation fields.
24. The spacer of claim 14 wherein the first corrugation field and the second corrugation field each comprise corrugations that are generally trapezoidal, triangular, arcuate, square, rectangular, or generally follow a sine wave.
25. The multi-pane glazing unit of claim 10 wherein the channel member comprises two opposed, flat side walls that respectively define the two side regions of the spacer.
26. The multi-pane glazing unit of claim 1 wherein the corrugations of the first and second corrugation fields have peaks and valleys that are elongated in a lateral direction to as to extend straight across the width of the spacer.
27. The multi-pane glazing unit of claim 1 wherein the first corrugation field has peaks that are continuous with peaks of corresponding corrugations in the second corrugation field even though said peaks of the first corrugation field are of greater height than said peaks of the second corrugation field.
28. The multi-pane glazing unit of claim 1 wherein the second corrugation field is corrugated on a continuous uninterrupted basis along the length of the spacer, whereas the first corrugation field has a series of non-corrugated wall regions spaced apart along the length of the spacer.
29. The multi-pane glazing unit of claim 1 wherein the multi-pane glazing unit is a double glazing unit having only two panes, namely said first and second panes.
30. The multi-pane glazing unit of claim 10 wherein the first metal strip is more than 50% thicker than the second metal strip.
31. The multi-pane glazing unit of claim 30 wherein the first metal strip is at least twice as thick as the second metal strip.
32. The multi-pane glazing unit of claim 1 wherein the engineered wall has a thickness of less than 0.004 inch.
33. The multi-pane glazing unit of claim 1 wherein the engineered wall has two lateral edges each defined by a non-corrugated, flat side region, said two flat side regions located laterally outward of the multiple corrugation fields of the engineered wall.
34. The spacer of claim 14 wherein the engineered wall has three corrugation fields including said first and second corrugation fields as well as a third corrugation field, said second and third corrugation fields being located adjacent to respective lateral sides of the engineered wall, said first corrugation field being located between said second and third corrugation fields.
35. The spacer of claim 34 wherein said second and third corrugation fields have corrugations of the same configuration, while said first corrugation field has corrugations that are configured differently than the corrugations of said second and third corrugation fields.
36. The spacer of claim 14 wherein the spacer comprises a first metal strip defining a channel member, and a second metal strip defining the engineered inner wall, such that said second metal strip defines both said first and second corrugation fields, and the channel member defines the two side walls of the spacer, the two side walls of the spacer being opposed, flat side walls.
37. The spacer of claim 14 wherein the corrugations of the first and second corrugation fields have peaks and valleys that are elongated in a lateral direction to as to extend straight across the width of the spacer.
38. The spacer of claim 14 wherein the second corrugation field is corrugated on a continuous uninterrupted basis along the length of the spacer, whereas the first corrugation field has a series of non-corrugated wall regions spaced apart along the length of the spacer.
39. The spacer of claim 14 wherein the engineered wall has a thickness of less than 0.002 inch.