1. A direct-converting X-ray radiation detector for detecting X-ray radiation, comprising:
a semiconductor material, used to detect the X-ray radiation;
at least one collimator; and
at least one radiation source, to irradiates the semiconductor material with additional radiation,
the at least one collimator including at least one reflection layer on a side facing the semiconductor material, on which the additional radiation is reflected onto the semiconductor material.
2. The X-ray radiation detector of claim 1, wherein a gap for the additional radiation is designed between the semiconductor material and the at least one collimator.
3. The X-ray radiation detector of claim 1, wherein the at least one reflection layer includes a reflectance of at least 50%.
4. The X-ray radiation detector of claim 1, wherein the at least one reflection layer is designed to be flat.
5. The X-ray radiation detector of claim 1, wherein, the at least one reflection layer includes at least one curvature.
6. The X-ray radiation detector of claim 1, wherein the at least one reflection layer includes material properties varying as the distance from the radiation source varies.
7. The X-ray radiation detector of claim 1, wherein the at least one reflection layer includes different material properties viewed in the propagation direction of the additional radiation.
8. The X-ray radiation detector of claim 1, wherein an electrode attached to the semiconductor material, opposing the at least one reflection layer, includes at least one opening.
9. The X-ray radiation detector of claim 1, wherein the at least one reflection layer is formed from at least one material, selected from the following list: reflector paint, metal, plastic, compounds, and semiconductors.
10. A CT system comprising the direct-converting X-ray radiation detector of claim 1.
11. A method for detecting incident X-ray radiation by way of a direct-converting X-ray radiation detector, the method comprising:
indirectly irradiating a semiconductor material, used for detection, for the generation of additional charge carriers with additional radiation via at least one reflection layer.
12. The method of claim 11, wherein at least one reflection layer is used with a reflectance which varies at least one of in the propagation direction of the additional radiation and in the z direction of an X-ray radiation detector built into a CT system.
13. The method of claim 11, wherein an electrode, attached to the semiconductor material opposing the at least one reflection layer, is used with a transmittance which varies at least one of in the propagation direction of the additional radiation and in the z direction of an X-ray radiation detector built into a CT system.
14. The method of claim 11, wherein the semiconductor material is irradiated at least one of before and during the incidence of the X-ray radiation to be detected.
15. A CT system comprising the direct-converting X-ray radiation detector of claim 2.
16. The X-ray radiation detector of claim 1, wherein the at least one reflection layer includes a reflectance of at least 90%.
17. The X-ray radiation detector of claim 1, wherein the at least one reflection layer includes a reflectance of at least 99%.
18. The X-ray radiation detector of claim 1, wherein the at least one reflection layer is formed from at least one material, selected from the following list: reflector paint, light metal, laminated plastic, metal alloys and semiconductors.
19. The method of claim 12, wherein an electrode, attached to the semiconductor material opposing the at least one reflection layer, is used with a transmittance which varies at least one of in the propagation direction of the additional radiation and in the z direction of an X-ray radiation detector built into a CT system.
20. The method of claim 12, wherein the semiconductor material is irradiated at least one of before and during the incidence of the X-ray radiation to be detected.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A fixing device, adapted to be incorporated in an image forming apparatus and operable to fix a toner image on a recording medium, the fixing device comprising:
a first rotative member and a second rotative member, forming a nip portion therebetween, at which the toner image is fixed on the recording medium; and
a separator, having a first portion adapted to separate the recording medium, which has been passed through the nip portion, from one of the first rotative member and the second rotative member, the separator extending in a first direction which is perpendicular to a transporting direction of the recording medium, wherein:
the first portion is convex toward an upstream side of the transporting direction; and
the separator is curved such that both end portions thereof in the first direction are made closer to one of the first rotative member and the second rotative member than a center portion thereof in the first direction.
2. The fixing device as set forth in claim 1, wherein:
the separator comprises a second portion continued from the first portion and including a plurality of sections each of which extends in a direction different from each other, and each of which is adapted to guide the recording medium to an inlet of a subsequent stage of the image forming apparatus; and
a downstream end of the second portion relative to the transporting direction of the recording medium is disposed in the vicinity of the inlet.