1. A method, comprising:
collecting inputs for a circuit board under test;
evaluating historical repair records using a neuron network;
providing repair actions for the circuit board based on the historical repair records; and
providing an output reflecting a particular component of the circuit board to be replaced or to be repaired, wherein the output is associated with a developed probability of successfully fixing an issue that was identified by the test.
2. The method of claim 1, wherein the inputs include fault syndromes and log files associated with the circuit board under test.
3. The method of claim 1, wherein at least one of the inputs of the neuron network is a syndrome vector extracted from a failure log.
4. The method of claim 1, wherein particular outputs having higher probabilities are selected as the repair actions.
5. The method of claim 1, wherein the neuron network is weighted using diagnosis knowledge weights.
6. The method of claim 1, wherein the inputs include syndromes selected based on hardware designs and software designs related to the circuit board.
7. The method of claim 1, wherein a resultant of the repair actions is fed back into the neuron network.
8. Logical, executable process steps encoded in one or more non-transitory, tangible, computer readable media when, executed by a processor, operate to perform operations comprising:
collecting inputs for a circuit board under test;
evaluating historical repair records using a neuron network;
providing repair actions for the circuit board based on the historical repair records; and
providing an output reflecting a particular component of the circuit board to be replaced or to be repaired, wherein the output is associated with a developed probability of successfully fixing an issue that was identified by the test.
9. The computer readable media of claim 8, wherein the inputs include fault syndromes and log files associated with the circuit board under test.
10. The computer readable media of claim 8, wherein at least one of the inputs of the neuron network is a syndrome vector extracted from a failure log.
11. The computer readable media of claim 8, wherein particular outputs having higher probabilities are selected as the repair actions.
12. The computer readable media of claim 8, wherein the neuron network is weighted using diagnosis knowledge weights.
13. The computer readable media of claim 8, wherein the inputs include syndromes selected based on hardware designs and software designs related to the circuit board.
14. The computer readable media of claim 8, wherein a resultant of the repair actions is fed back into the neuron network.
15. An apparatus, comprising:
a processor;
a memory element; and
a debugging tool, wherein the apparatus is configured for:
collecting inputs for a circuit board under test;
evaluating historical repair records using a neuron network;
providing repair actions for the circuit board based on the historical repair records; and
providing an output reflecting a particular component of the circuit board to be replaced or to be repaired, wherein the output is associated with a developed probability of successfully fixing an issue that was identified by the test.
16. The apparatus of claim 15, wherein the inputs include fault syndromes and log files associated with the circuit board under test.
17. The apparatus of claim 15, wherein at least one of the inputs of the neuron network is a syndrome vector extracted from a failure log.
18. The apparatus of claim 15, wherein particular outputs having higher probabilities are selected as the repair actions.
19. The apparatus of claim 15, wherein the neuron network is weighted using diagnosis knowledge weights.
20. The apparatus of claim 15, wherein the inputs include syndromes selected based on hardware designs and software designs related to the circuit board.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. An infrared detection element comprising:
a single-crystalline base layer with a thickness of 50 nm to 10 m having a principal surface,
a first electrode layer formed on a principal surface of said single-crystalline layer,
a ferroelectric layer formed on said first electrode layer and composed of a single-crystalline layer or a unidirectioally oriented layer, a distortion of which is elastically constrained by said single-crystalline base layer in a plain parallel to said principal surface of the single-crystalline base layer, and
a second electrode layer formed on said ferroelectric layer,
wherein an amount of a charge generated in said ferroelectric layer of said infrared detection element is detected as an electric signal from said first second electrode layers.
2. An infrared detection element according to claim 1, wherein said ferroelectric layer has a perovskite structure.
3. An infrared detection element according to claim 1, wherein said ferroelectric layer has a main component of Ba1-xSrxTiO3 (01).
4. An infrared detection element according to claim 1, wherein said first electrode layer is made of a noble metal layer or of a conductive oxide layer having a perovskite structure and a thickness of 1 m or less.
5. An infrared detection element according to claim 2, wherein said single-crystalline base layer has a surface oriented to (001) direction and said ferroelectric layer is epitaxially grown or is orientatedly grown in the (001) direction.
6. An infrared detection element according to claim 2, wherein a b axes of said ferroelectric layer are formed in a plain parallel to said principal surface of said semiconductor layer and c axis of said ferroelectric layer is formed in a direction perpendicular to said principal surface of said semiconductor layer.
7. An infrared detection element comprising:
a silicon single-crystalline base layer with a thickness of 50 nm to 10 m having a principal surface,
a first electrode layer formed on a principal surface of said single-crystalline layer,
a ferroelectric layer formed on said first electrode layer and composed of a single-crystalline layer formed by an epitaxial growth or by an unidirectioally oriented layer formed by orientation growth on said principal surface of the single-crystalline base layer, and
a second electrode layer formed on said ferroelectric layer,
wherein an amount of a charge generated in said ferroelectric layer of said infrared detection element is detected as an electric signal from said first second electrode layers.
8. An infrared detection element according to claim 7, wherein said ferroelectric layer has a perovskite structure.
9. An infrared detection element according to claim 8, wherein said ferroelectric layer has a main component of Ba1-xSrxTiO3 (01).
10. An infrared detection element according to claim 1, wherein said first electrode layer is made of a noble metal layer or a conductive oxide layer having a perovskite structure and a thickness of 1 m or less.
11. An infrared detection element comprising:
a silicon single-crystalline base layer with a thickness of 50 nm to 10 m having a principal surface,
a first electrode layer formed on a principal surface of said single-crystalline layer,
a single-crystalline ferroelectric layer formed fixedly on said first electrode layer,
wherein an amount of a charge generated in said ferroelectric layer of said infrared detection element is detected as an electric signal from said first second electrode layers.
12. An infrared detection element according to claim 11, wherein said ferroelectric layer is fixedly formed on said first electrode layer by sputtering.
13. An infrared detection element according to claim 12, wherein said ferroelectric layer has a perovskite structure.
14. An infrared detection element according to claim 13, wherein said ferroelectric layer has a main component of Ba1-xSrxTiO3 (01).
15. An infrared detection element according to claim 14, wherein said first electrode layer is made of a noble metal layer or a conductive oxide layer having a perovskite structure.
16. An infrared detection element having:
a single-crystalline base layer with a thickness of 50 nm to 10 m having a principal surface, a first electrode layer formed on said principal surface of said single-crystalline layer,
a ferroelectric layer formed on said first electrode layer and composed of a first single-crystalline layer or a unidirectioally oriented layer, a distortion of which is elastically constrained by said single-crystalline base layer in a plain parallel to said principal surface of said single-crystalline base layer,
an infrared detection element having a second electrode layer formed on said ferroelectric layer,
a third electrode layer formed on said principal surface of said single-crystalline base layer,
a second ferroelectric layer formed on said first electrode layer and composed of a first single-crystalline layer or a unidirectioally oriented layer, a distortion of which is elastically constrained by said single-crystalline base layer in a plain parallel to said principal surface of said single-crystalline base layer,
a reference cell having a fourth electrode layer formed on said ferroelectric layer, and
an infrared reflection film formed on said reference cell,
wherein an amount of a charge generated in said ferroelectric layer of said infrared detection element is detected as an electric signal from said first second electrode layers, and an amount of a charge generated in said ferroelectric layer of said infrared detection element is detected as an electric signal from said third and fourth electrode layers, and wherein a difference between said electric signals is detected.
17. An infrared detection element according to claim 16, wherein said first and second ferroelectric layers have a perovskite structure.
18. An infrared detection element according to claim 17, wherein said first and second ferroelectric layers have a main component of Ba1-xSrxTiO3 (01).
19. An infrared detection element according to claim 18, wherein said first and third electrode layers are made of a noble metal layer or a conductive oxide layer having a perovskite structure.
20. An infrared detection element according to claim 19, wherein said single-crystalline layer is a single-crystalline silicon layer having a surface oriented to (001) direction and said first and second ferroelectric layers are epitaxially grown or are orientationally grown in said (001) direction.
21. An infrared detection element according to claim 20, wherein a and b axes of said ferroelectric layer are formed in said plain parallel to said principal surface of said semiconductor layer and c axis of said ferroelectric layer is formed in a direction perpendicular to said principal surface of said semiconductor layer.
22. An infrared detection element having a single-crystalline base layer with a thickness of 50 nm to 10 m having a principal surface,
a first electrode layer formed on said principal surface of said single-crystalline layer,
a first ferroelectric layer composed of a single-crystalline layer which is fixed on said first electrode layer,
an infrared detection element having a second electrode layer formed on said ferroelectric layer,
a third electrode layer formed on said principal surface of said single-crystalline base layer,
a second ferroelectric layer composed of a single-crystalline layer which is fixed on said third electrode layer,
a reference cell having a fourth electrode layer formed on said ferroelectric layer, and
an infrared reflection film formed on said reference cell,
wherein an amount of charge in said ferroelectric layer of said infrared detection element is detected as an electric signal from said first and said second electrode layers, and an amount of charge in said ferroelectric layer of said reference cell is detected as an electric signal from said third and said fourth electrode layers, and wherin a difference between said electric signals is detected.