1. A brush box for processing a semiconductor substrate, comprising:
a base;
a tank disposed on the base; and
a pair of bracket assemblies disposed on opposing sides of the tank and movably coupled to the base, at least one of the bracket assemblies comprising:
a first bracket section having a first side and a second side separated by a first structural support member; and
a second bracket section having a first side and a second side separated by a second structural support member, first bracket section being fixed to the second bracket section for lateral movement of the respective bracket assembly relative to the enclosure, and the first bracket section being pivotally movable relative to the second bracket section.
2. The brush box of claim 1, wherein the first structural support member and second structural support member are coupled together by an alignment member that provides common movement of both of the structural support members about a rotational axis and movement of the first structural support member in a pivotal axis relative to the second structural support member.
3. The brush box of claim 2, wherein the alignment member further comprises:
a shaft between the first structural member and the second structural member.
4. The brush box of claim 3, wherein the shaft is disposed in a channel formed in the second structural support member.
5. The brush box of claim 2, wherein the alignment member further comprises:
a pivot mechanism at least partially disposed in an opening formed in the first structural member.
6. The brush box of claim 5, wherein the pivot mechanism comprises a shaft and a preloaded first bearing assembly coupled between the shaft and the first structural member.
7. The brush box of claim 6, wherein the preloaded first bearing assembly includes a wave spring coupled between a shoulder formed on the opening and the first bearing assembly.
8. The brush box of claim 7, wherein the pivot mechanism further comprises a second bearing assembly spaced apart from the first bearing assembly by a sleeve.
9. A brush box for processing a semiconductor substrate, comprising:
a base;
a tank disposed on the base; and
a pair of bracket assemblies disposed on opposing sides of the base and being coupled to an actuator providing movement of each bracket assembly in a rotational axis relative to the enclosure, at least one of the bracket assemblies comprising:
a first bracket section hingedly coupled to the base; and
a second bracket section having a cylindrical roller coupled thereto, the second bracket section being fixed to the first bracket section for movement with the first bracket section on the rotational axis, and the second bracket section being movable in a pivotal axis relative to the first bracket section.
10. The brush box of claim 9, wherein the first bracket sections and the second bracket sections include a first structural support member and a second structural support member, respectively, coupled between opposing sides of the first bracket sections and second bracket sections.
11. The brush box of claim 10, further comprising:
an alignment member disposed between the first structural member and the second structural member.
12. The brush box of claim 11, wherein the alignment member further comprises:
a central shaft disposed between the first structural member and the second structural member.
13. The brush box of claim 12, wherein the central shaft is disposed in a channel formed in the second structural support member.
14. The brush box of claim 11, wherein the alignment member further comprises:
a pivot mechanism at least partially disposed in an opening formed in the first structural member.
15. The brush box of claim 14, wherein the pivot mechanism comprises a preloaded bearing assembly coupled between the central shaft and the first structural member.
16. A method for processing a substrate, comprising:
positioning a substrate in a tank between two cylindrical rollers;
moving each of the two cylindrical rollers to a position where at least a portion of an outer surface of each of the cylindrical rollers are in contact with major surfaces of the substrate; and
rotating the substrate in a first rotational axis while rotating the two cylindrical rollers in a second rotational axis and a third rotational axis, wherein the second and third rotational axes are substantially parallel, the first rotational axis being substantially perpendicular to the second and third rotational axes, while allowing the orientation of one or both of the two cylindrical rollers to pivot in a fourth rotational axis relative to a plane defined by at least one of the major surfaces of the substrate.
17. The method of claim 16, wherein one of the two cylindrical rollers are rotated in a first orientational axis relative to the substrate, the first orientational axis being substantially parallel to the major surfaces of the substrate.
18. The method of claim 17, wherein, during rotation in the second rotational axis, the first orientational axis of the cylindrical roller moves between the first orientational axis and a second orientational axis, the second orientational axis being different than the first orientational axis.
19. The method of claim 16, wherein, during rotation in the second rotational axis, the outer surface of the two cylindrical rollers are maintained to be in substantially full contact with the major surfaces of the substrate.
20. The method of claim 16, wherein, during rotation in the second rotational axis, each of the two cylindrical rollers provide substantially consistent friction between the major surfaces of the substrate and the outer surface of the two cylindrical rollers.
21. The method of claim 16, wherein, during rotation in the second rotational axis, each of the two cylindrical rollers provide substantially consistent pressure applied to the major surfaces of the substrate.
22. The method of claim 16, wherein each of the two cylindrical rollers are coupled to a bracket assembly, each bracket assembly having two sections that are adapted to move relative to each other.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of fabricating a stacked high-density laser diode array, the method comprising:
fabricating a plurality of laser diode dies on a semiconductor wafer having opposite surfaces;
applying a solder layer on one of the surfaces of the wafer;
cleaving the laser diode dies into individual laser diode bars, each of the laser diode bars having a solder layer;
placing a plurality of the individual laser diode bars in a stack, wherein each of the individual laser diode bars are in contact with the solder layer of at least one adjacent individual bar;
placing the plurality of individual laser diode bars in a vacuum chamber; and
while in the vacuum chamber, (i) attaching the bars together through a solder reflow process so as to form the laser diode array, and (ii) applying a reflection coating and an anti-reflection coating to respective opposing facets of the laser diode bars.
2. The method of claim 1, wherein the stack of individual laser diode bars forms a laser diode array having opposing ends, the method further comprising:
bonding the opposing ends of the laser diode array to conductor end blocks;
seating the conductor end blocks to a first surface of a backplane; and
connecting a second surface of the backplane to a heat-conducting substrate, the second surface of the backplane being opposite the first surface of the backplane.
3. The method of claim 1, wherein the solder layer is one of a group of 80 Au20 Sn, AuGe, Gold-Silicon eutectic, Sn 96, or other soft eutectic solders.
4. The method of claim 1, wherein the solder layer is patterned to correspond to the plurality of laser diode dies on the wafer.
5. The method of claim 1, wherein the solder layer is applied over the entire surface of the wafer.
6. The method of claim 1, wherein the solder reflow process occurs in the vacuum chamber prior to the applying of the reflection coating and the anti-reflection coating.
7. The method of claim 1, wherein the applying of at least one of the reflection and anti-reflection coatings occurs prior to the solder reflow process.
8. A method of fabricating a high-density stack of laser diodes, each of the laser diode bars having an emitter surface, opposing surfaces on either side of the emitter surface, a metallization layer on each of the opposing surfaces, and a solder layer on at least one of the metallization layers, the method comprising:
arranging the laser diode bars in a stack such that each of the laser diode bars are contacting at least one other laser diode bar and the emitter surfaces of the laser diode bars are facing the same direction;
placing the stack of laser diode bars in a vacuum environment;
while in the vacuum environment, depositing an anti-reflection coating on the emitter surfaces of the laser diode bars; and
while in the vacuum environment, joining the laser diode bars by applying a temperature sufficient to reflow the solder layers.
9. The method of claim 8, wherein each of the laser diode bars has a reflective surface opposite the emitter surface and wherein a high-reflection coating is deposited on the reflective surface while in the vacuum environment.
10. The method of claim 9, wherein the anti-reflection coating is deposited prior to depositing the high-reflection coating and joining the laser diode bars.
11. The method of claim 9, wherein the joining the laser diode bars occurs prior to depositing the anti-reflection coating and the high-reflection coating.
12. The method of claim 9, wherein the laser diode bars are cleaved from a semiconductor wafer having active layers including a p-doped layers and n-doped layers, the metallization layers including a first metallization layer and a second metallization layer, and wherein the first metallization layer is deposited on a p-side of the wafer, the wafer being thinned to form a second opposite surface and wherein the second metallization layer is deposited on second opposite surface.
13. The method of claim 12, wherein a solder layer is applied to the first metallization layer prior to cleaving the wafer to form the laser diode bars, the solder layer forming the solder layer on at least one of the metallization layers of the laser diode bars.
14. The method of claim 13, wherein a second solder layer is applied to the second metallization layer, and wherein each of the laser diode bars has a second solder layer formed from the second solder layer applied to the second metallization layer.
15. A method of fabricating a high-density stack of laser diodes, comprising:
forming epitaxial layers on a semiconductor wafer, the epitaxial layers including a quantum well;
depositing a first metallization layer on a first surface of the wafer;
depositing a second metallization layer on a second surface of the wafer opposite the first surface;
applying a solder layer on at least one of the first and second metallization layers of the wafer;
after applying the solder layer, cleaving the wafer into a plurality of laser diode bars, each of the laser diode bars including a surface having a bar-solder layer that was a portion of the solder layer, each of the plurality of laser diode bars having first and second cleaved facet surfaces substantially perpendicular to the surface having the bar-solder layer;
placing the plurality of laser diode bars in a vacuum chamber such that (i) the bar-solder layers from the plurality of laser diode bars are placed against an adjacent laser diode bar and (ii) the first and second cleaved facet surfaces of the plurality of laser diode bars are exposed;
forming an anti-reflection coating on the first cleaved facet surface of the laser diode bars in a vacuum chamber;
forming a high-reflection coating on the second opposite cleaved facet surface of the laser diode bars in the vacuum chamber; and
exposing the plurality of laser diode bars to a temperature sufficient to reflow the bar-solder layers in the vacuum chamber.
16. The method of claim 15, wherein the plurality of laser diode bars is exposed to the temperature prior to forming the high reflection and anti-reflection coatings.
17. The method of claim 15, wherein the anti-reflection coating is formed prior to the plurality of laser diode bars being exposed to the temperature sufficient to reflow the bar solder layers.
18. The method of claim 17, wherein the high-reflection coating is formed after the anti-reflection coating is formed and prior to the plurality of laser diode bars being exposed to the temperature sufficient to reflow the bar-solder layers.
19. The method of claim 15, wherein the bar solder layers are one of a group of 80 Au20 Sn, AuGe, Gold-Silicon eutectic, Sn 96, or other soft eutectic solders.
20. The method of claim 17, further comprising applying a second solder layer on the other one of the first or second metallization layers of the wafer.