1. Apparatus comprising an endovascular stent-graft system, which comprises:
a fenestrated stent-graft, which includes first and second end portions and a central portion disposed longitudinally therebetween, and which comprises a fenestrated support structure and a fenestrated covering element, which is securely attached to and covers at least a portion of the fenestrated support structure, wherein the fenestrated support structure and the fenestrated covering element are shaped so as to together define first and second lateral apertures in the central portion, which apertures face in generally radially opposing directions, when the fenestrated stent-graft is in a radially-expanded state thereof; and
a crossing stent-graft, which includes first and second end portions and a central portion disposed longitudinally therebetween, and which comprises a crossing support structure and one or more crossing covering elements, which are securely attached to and at least partially cover the first and the second end portions, such that the central portion is at least partially uncovered when the crossing stent-graft is in a radially-expanded state thereof,
wherein the fenestrated and the crossing stent-grafts are sized and shaped such that, when the crossing stent-graft is disposed through the first and the second apertures such that the central portion of the crossing stent-graft is within the central portion of the fenestrated stent-graft, the first and the second end portions of the crossing stent-graft (a) pass through the first and the second apertures, respectively, and (b) when the fenestrated and the crossing stent-grafts are in their radially-expanded states, form blood-impervious seals with the first and the second apertures, respectively, such that interior spaces defined by all of the following are in fluid communication with one another: the first and the second end portions and the central portion of the fenestrated stent-graft, and the first and the second end portions and the central portion of the crossing stent-graft.
2. The apparatus according to claim 1, wherein the central portion of crossing stent-graft is generally sized to fit a perimeter of each of the apertures, when the stent-grafts are unconstrained in their radially-expanded states.
3. The apparatus according to claim 1, wherein the one or more crossing covering elements include first and second covering elements, which are securely attached to and at least partially cover the first and the second end portions of the crossing stent-graft, respectively.
4. The apparatus according to claim 3, wherein, when the crossing stent-graft is unconstrained in its radially-expanded state:
one end of the first covering element defines a generally elliptical circumferential junction between the first end portion and the central portion of the crossing stent-graft,
one end of the second covering element defines a generally elliptical circumferential junction between the second end portion and the central portion of the crossing stent-graft, and
the central portion of the crossing stent-graft is entirely uncovered.
5-6. (canceled)
7. The apparatus according to claim 1, wherein the central portion of the fenestrated stent-graft is generally fusiform, when the fenestrated stent-graft is unconstrained in its radially-expanded state.
8. The apparatus according to claim 1, wherein the fenestrated stent-graft is generally fusiform, when the fenestrated stent-graft is unconstrained in its radially-expanded state.
9-13. (canceled)
14. The apparatus according to claim 1, wherein the first and the second end portions of the crossing stent-graft have respective medial ends, at which the first and the second end portions are joined to the central portion of the crossing stent-graft, respectively, and wherein at least one of the first and the second end portions of the crossing stent-graft is outwardly flared toward the central portion of the crossing stent-graft, when the crossing stent-graft is in its radially-expanded state.
15. The apparatus according to claim 1, wherein the first and the second end portions of the fenestrated stent-graft have respective ends that coincide with respective ends of the fenestrated stent-graft, and wherein a ratio of (a) a greatest perimeter of the central portion of the fenestrated stent-graft to (b) a perimeter of each of the ends of the first and the second end portions of the fenestrated stent-graft is between 4 and 15, when the fenestrated stent-graft is unconstrained in its radially-expanded state.
16-17. (canceled)
18. The apparatus according to claim 1, wherein the fenestrated covering element does not extend to at least one end of the fenestrated stent-graft, such that the fenestrated support structure is not covered near the end.
19. The apparatus according to claim 1, wherein the one or more crossing covering elements do not extend to at least one end of the crossing stent-graft, such that the crossing support structure is not covered near the end.
20. The apparatus according to claim 1, wherein an average perimeter of the central portion of the crossing stent-graft (a) is less than an average perimeter of the first end portion of the crossing stent-graft and (b) is less than an average perimeter of the second end portion of the crossing stent-graft, when the crossing stent-graft is unconstrained in its radially-expanded state.
21-26. (canceled)
27. The apparatus according to claim 1, wherein the crossing stent-graft, when in its radially-expanded state, has an hour-glass shape, and the central portion of the crossing stent-graft is shaped so as to define a stricture in the hour-glass shape.
28. The apparatus according to claim 1, wherein the crossing stent-graft is configured to be implanted in a main blood vessel having an aneurysm, and the first and the second end portions of the fenestrated stent-graft are configured to be implanted at least partially in respective branching blood vessels of the main blood vessel, such that the central portion of the fenestrated stent-graft is positioned in the main blood vessel.
29. The apparatus according to claim 1, wherein the fenestrated stent-graft is configured to be implanted in a main blood vessel having an aneurysm, and the first and the second end portions of the crossing stent-graft are configured to be implanted at least partially in respective branching blood vessels of the main blood vessel, such that the central portion of the crossing stent-graft is positioned in the main blood vessel.
30. (canceled)
31. A method for treating a patient, the method comprising:
providing (a) a fenestrated stent-graft, which includes first and second end portions and a central portion disposed longitudinally therebetween, which central portion is shaped so as to define first and second lateral apertures that face in generally radially opposing directions, when the fenestrated stent-graft is in a radially-expanded state thereof, and (b) a crossing stent-graft, which includes first and second end portions and a central portion disposed longitudinally therebetween, and which comprises a crossing support structure and one or more crossing covering elements, which are securely attached to and at least partially cover the first and the second end portions, such that the central portion is at least partially uncovered when the crossing stent-graft is in a radially-expanded state thereof;
deploying the fenestrated stent-graft such that the first and the second end portions thereof are at least partially positioned in respective first and second branching blood vessels of a main blood vessel of the patient, the central portion of the fenestrated stent-graft is positioned in the main blood vessel, and the fenestrated stent-graft is in its radially-expanded state;
thereafter, introducing the crossing stent-graft into the main blood vessel, and passing the crossing stent-graft, while in a radially-compressed state thereof, through the second and the first apertures, such that the central portion of the crossing stent-graft is within the central portion of the fenestrated stent-graft, and the first and the second end portions of the crossing stent-graft pass through the first and the second apertures, respectively; and
transitioning the crossing stent-graft to its radially-expanded state, such that the first and the second end portions of the crossing stent-graft form blood-impervious seals with the first and the second apertures, respectively, such that interior spaces defined by all of the following are in fluid communication with one another: the first and the second end portions and the central portion of the fenestrated stent-graft, and the first and the second end portions and the central portion of the crossing stent-graft.
32. The method according to claim 31, wherein deploying the fenestrated stent-graft comprises laparoscopically introducing the fenestrated stent-graft into the first branching blood vessel, and advancing the fenestrated stent-graft across the main blood vessel to the second branching blood vessel.
33. The method according to claim 31, wherein introducing the crossing stent-graft comprises endovascularly introducing the crossing stent-graft into the main blood vessel.
34. (canceled)
35. The method according to claim 31, wherein providing the fenestrated stent-graft comprises providing the fenestrated stent-graft in which the central portion thereof is generally fusiform, when the fenestrated stent-graft is unconstrained in its radially-expanded state.
36. The method according to claim 31, wherein providing the fenestrated stent-graft comprises providing the fenestrated stent-graft which is generally fusiform, when the fenestrated stent-graft is unconstrained in its radially-expanded state.
37. A method for treating a patient, the method comprising:
providing (a) a fenestrated stent-graft, which includes first and second end portions and a central portion disposed longitudinally therebetween, which central portion is shaped so as to define first and second lateral apertures that face in generally radially opposing directions, when the fenestrated stent-graft is in a radially-expanded state thereof, and (b) a crossing stent-graft, which includes first and second end portions and a central portion disposed longitudinally therebetween, and which comprises a crossing support structure and one or more crossing covering elements, which are securely attached to and at least partially cover the first and the second end portions, such that the central portion is at least partially uncovered when the crossing stent-graft is in a radially-expanded state thereof;
deploying the fenestrated stent-graft in a main blood vessel of the patient such that the first and the second apertures generally face first and second branching blood vessels of the main blood vessel, and the fenestrated stent-graft is in its radially-expanded state;
thereafter, introducing the crossing stent-graft into the first branching blood vessel, and passing the crossing stent-graft, while in a radially-compressed state thereof, through the first and the second apertures, and into the second branching blood vessel, such that the central portion of the crossing stent-graft is within the central portion of the fenestrated stent-graft, and the first and the second end portions of the crossing stent-graft pass through the first and the second apertures, respectively; and
transitioning the crossing stent-graft to its radially-expanded state, such that the first and the second end portions of the crossing stent-graft form blood-impervious seals with the first and the second apertures, respectively, such that interior spaces defined by all of the following are in fluid communication with one another: the first and the second end portions and the central portion of the fenestrated stent-graft, and the first and the second end portions and the central portion of the crossing stent-graft.
38. The method according to claim 37, wherein deploying the fenestrated stent-graft comprises endovascularly introducing the crossing stent-graft into the main blood vessel.
39. The method according to claim 37, wherein introducing the crossing stent-graft comprises laparoscopically introducing the crossing stent-graft into the first branching blood vessel, and advancing the crossing stent-graft across the main blood vessel to the second branching blood vessel.
40-44. (canceled)
45. The method according to claim 31, wherein providing the crossing stent-graft comprises providing the crossing stent-graft in which the central portion thereof is generally sized to fit a perimeter of each of the apertures, when the stent-grafts are unconstrained in their radially-expanded states.
46-49. (canceled)
50. The method according to claim 37, wherein providing the crossing stent-graft comprises providing the crossing stent-graft in which the central portion thereof is generally sized to fit a perimeter of each of the apertures, when the stent-grafts are unconstrained in their radially-expanded states.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode;
forming a gate insulating layer over the gate electrode;
forming an oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer overlapping with the gate electrode;
forming a source electrode and a drain electrode over the oxide semiconductor layer;
forming a first insulating layer over the source electrode and the drain electrode under a condition with a first gas flow rate, a first pressure, a first RF power, and first substrate temperature, the first insulating layer being in contact with part of the oxide semiconductor layer;
introducing oxygen into the first insulating layer by a plasma treatment under oxygen atmosphere; and
forming a second insulating layer over the first insulating layer under a condition with a second gas flow rate, a second pressure, a second RF power, and second substrate temperature,
wherein a thickness of the first insulating layer is more than 10 nm and less than 100 nm,
wherein the second insulating layer is thicker than the first insulating layer,
wherein the first gas flow rate is smaller than the second gas flow rate,
wherein the first pressure is smaller than the second pressure,
wherein the first RF power is smaller than the second RF power, and
wherein the first substrate temperature is higher than the second substrate temperature.
2. The method for manufacturing a semiconductor device according to claim 1, further comprising the step of removing impurities of the part of the oxide semiconductor layer after forming the source electrode and the drain electrode.
3. The method for manufacturing a semiconductor device according to claim 1,
further comprising the step of forming a third insulating layer over the second insulating layer by forming a metal layer over the second insulating layer and performing an oxygen doping treatment thereon.
4. The method for manufacturing a semiconductor device according to claim 3, wherein the third insulating layer comprises aluminum oxide.
5. The method for manufacturing a semiconductor device according to claim 3, wherein the third insulating layer has a resistivity less than or equal to 1\xd71019 \u03a9\xb7m.
6. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode;
forming a gate insulating layer over the gate electrode;
forming an oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer overlapping with the gate electrode;
forming a source electrode and a drain electrode over the oxide semiconductor layer;
forming a first insulating layer over the source electrode and the drain electrode, the first insulating layer being in contact with part of the oxide semiconductor layer;
introducing oxygen into the first insulating layer by a plasma treatment under oxygen atmosphere; and
forming a second insulating layer over the first insulating layer,
wherein a thickness of the first insulating layer is more than 10 nm and less than 100 nm,
wherein a thickness of the second insulating layer is more than 3 nm and less than 10 nm, and
wherein the second insulating layer is a metal oxide layer formed by forming a metal layer over the first insulating layer and performing an oxygen doping treatment thereon.
7. The method for manufacturing a semiconductor device according to claim 6, further comprising the step of removing impurities of the part of the oxide semiconductor layer after forming the source electrode and the drain electrode.
8. The method for manufacturing a semiconductor device according to claim 6, wherein the second insulating layer comprises aluminum oxide.
9. The method for manufacturing a semiconductor device according to claim 6, wherein the second insulating layer has a resistivity less than or equal to 1\xd71019 \u03a9\xb7m.
10. The method for manufacturing a semiconductor device according to claim 1, further comprising the step of forming a planarization insulating layer over the second insulating layer.
11. The method for manufacturing a semiconductor device according to claim 10, further comprising the step of forming a conductive layer over the planarization insulating layer.
12. The method for manufacturing a semiconductor device according to claim 11, wherein the conductive layer is electrically connected to a photodiode.
13. The method for manufacturing a semiconductor device according to claim 6, further comprising the step of forming a planarization insulating layer over the second insulating layer.
14. The method for manufacturing a semiconductor device according to claim 13, further comprising the step of forming a conductive layer over the planarization insulating layer.
15. The method for manufacturing a semiconductor device according to claim 14, wherein the conductive layer is electrically connected to a photodiode.
16. The method for manufacturing a semiconductor device according to claim 1, further comprising the step of performing heat treatment to the oxide semiconductor layer before forming the source electrode and the drain electrode.
17. The method for manufacturing a semiconductor device according to claim 6, further comprising the step of performing heat treatment to the oxide semiconductor layer before forming the source electrode and the drain electrode.
18. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode;
forming a gate insulating layer over the gate electrode;
forming an oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer overlapping with the gate electrode;
forming a source electrode and a drain electrode over the oxide semiconductor layer;
performing dinitrogen monoxide plasma treatment to the oxide semiconductor layer after forming the source electrode and the drain electrode;
forming a first insulating layer over the source electrode and the drain electrode under a condition with a first gas flow rate, a first RF power, and first substrate temperature, the first insulating layer being in contact with part of the oxide semiconductor layer; and
forming a second insulating layer over the first insulating layer under a condition with a second gas flow rate, a second RF power, and second substrate temperature,
wherein a thickness of the first insulating layer is more than 10 nm and less than 100 nm,
wherein the second insulating layer is thicker than the first insulating layer,
wherein the first gas flow rate is smaller than the second gas flow rate,
wherein the first RF power is smaller than the second RF power, and
wherein the first substrate temperature is higher than the second substrate temperature.
19. The method for manufacturing a semiconductor device according to claim 18,
further comprising the step of forming a third insulating layer over the second insulating layer by forming a metal layer over the second insulating layer and performing an oxygen doping treatment thereon.
20. The method for manufacturing a semiconductor device according to claim 19, wherein the third insulating layer comprises aluminum oxide.
21. The method for manufacturing a semiconductor device according to claim 19, wherein the third insulating layer has a resistivity less than or equal to 1\xd71019 \u03a9\u2022m.
22. The method for manufacturing a semiconductor device according to claim 18, further comprising the step of forming a planarization insulating layer over the second insulating layer.
23. The method for manufacturing a semiconductor device according to claim 22, further comprising the step of forming a conductive layer over the planarization insulating layer.
24. The method for manufacturing a semiconductor device according to claim 23, wherein the conductive layer is electrically connected to a photodiode.
25. The method for manufacturing a semiconductor device according to claim 18, further comprising the step of performing heat treatment to the oxide semiconductor layer before forming the source electrode and the drain electrode.