1. A single crystal semiconductor body having a trench with sidewall portions disposed in different crystallographic planes of the body, such sidewall portions having thereon substantially uniformly thick, thermally grown, silicon dioxide material.
2-4. (Cancelled)
5. A single crystal semiconductor body comprising:
a trench formed in a surface of said single crystal semiconductor body, having sidewall portions being disposed in different crystallographic planes of the body;
first sidewall portions disposed in a first one of the different crystallographic planes;
a first layer of silicon dioxide material grown on said first sidewall portions at a first rate and to a first thickness when subjected to a thermal oxidation process;
second sidewall portions disposed in a second one of the different crystallographic planes; and
a second layer of silicon dioxide grown on said second sidewall portion at a second rate and on said first layer of said silicon dioxide material at a rate slower than said second rate wherein said first and second sidewall portions of the trench are subjected to a thermal oxidation process such that the thickness of said second layer of silicon dioxide on said second sidewall portions is substantially equal to the thickness of both said first and second layers of silicon dioxide on said first sidewall portions.
6. A single crystal semiconductor body comprising:
a surface having portions thereof disposed in a different crystallographic planes
a relatively thin material on selected ones of the surface portions, said selected ones of the surface portions residing in a first crystallographic plane;
a layer of silicon dioxide grown over said relatively thin material at a first rate by a thermal oxidation process to a selected thickness; and
said silicon dioxide grown at a second rate during said thermal oxidation process on unselected surface portions in a different crystallographic plane, said second rate different than said first rate such that the thickness of said silicon dioxide grown over both the selected surface portions and the unselected surface portions are substantially uniform.
7. The semiconductor body of claim 5 wherein said first sidewall portions are disposed in the <100> crystallographic plane and said second sidewall portions are disposed in the <110> crystallographic plane.
8. The semiconductor body of claim 6 wherein the relatively thin material is silicon nitride.
9. The semiconductor body of claim 6 further comprising another layer of silicon dioxide formed on said relatively thin material such that said another layer of silicon dioxide and said layer of silicon dioxide grown over said relatively thin material have a combined thickness substantially the same as the thickness of said layer of silicon dioxide grown on said unselected surface portions of said semiconductor body.
10. The semiconductor body of claim 6 wherein the relatively thin material is less than approximately 20 Angstroms.
11. The semiconductor body of claim 6 wherein the relatively thin material forms a layer which is thinner than the corresponding oxide layer grown on the selected and unselected surface portions.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A device for transmitting energy between a control unit and a position-measuring device via a line pair in a charge mode and for transmitting data between the control unit and the position-measuring device via the line pair in a communication mode, comprising:
an energy storage device arranged in the position-measuring device, the energy storage device being chargeable by the line pair in the charge mode and adapted to supply energy to the position-measuring device in the communication mode;
a charge unit arranged in the control unit; and
a switching device arranged in the control unit and adapted to connect the charge unit to the line pair in a two-pole manner in the charge mode.
2. The device according to claim 1, further comprising:
a charge-control unit arranged in the charge unit; and
switch elements;
wherein the charge-control unit is adapted to actuate the switch element to output a voltage of a voltage source, for charging the energy storage device, with two polarities.
3. The device according to claim 2, further comprising a zero-crossing detector arranged in the charge unit and adapted to determine a current zero crossing of the charge current and to signal the current zero crossing to the charge-control unit.
4. The device according to claim 1, further comprising a rectifier unit arranged in the position-measuring device, between the energy storage device and the line pair.
5. The device according to claim 1, further comprising an evaluation unit arranged in the position-measuring device and adapted to detect an end of the charge mode by analyzing voltage levels or a time characteristic of signals between lines of the line pair.
6. A system, comprising:
a position-measuring device;
a control unit;
a line pair connected to the position-measuring device and to the control unit; and
a device adapted to transmit energy between the control unit and the position-measuring device via the line pair in a charge mode and to transmit data between the control unit and the position-measuring device via the line pair in a communication mode, including:
an energy storage device arranged in the position-measuring device, the energy storage device being chargeable by the line pair in the charge mode and adapted to supply energy to the position-measuring device in the communication mode;
a charge unit arranged in the control unit; and
a switching device arranged in the control unit and adapted to connect the charge unit to the line pair in a two-pole manner in the charge mode.
7. A method, comprising: for transmitting energy and data between a control unit and a position-measuring device via a line pair, comprising:
in a charge mode, transmitting energy between a control unit and a position-measuring device via a line pair;
in a communication mode, transmitting data between the control unit and the position-measuring device via the line pair;
in the charge mode, charging, via the line pair, an energy storage device provided in the position-measuring device;
in the communication mode, supplying energy to the position-measuring device;
in the charge mode, connecting a charge unit, provided in the control unit, to the line pair in a two-pole manner by a switching device.
8. The method according to claim 7, further comprising separating the line pair from the charge unit by the switching device at an end of the charge mode.
9. The method according to claim 7, further comprising actuating switching elements by a charge-control unit, arranged in the charge unit, to reverse, at least once in each charge state, a polarity of a charge voltage output by the charge unit to charge the energy storage device.
10. The method according to claim 9, further comprising:
detecting, by a zero-crossing detector arranged in the charge unit, a current zero crossing of a charge current triggered by the polarity reversal of the charge current; and
signaling the current zero crossing to the charge-control unit.
11. The method according to claim 7, further comprising detecting, by an evaluation unit arranged in the position-measuring device, an end of the charge mode by analyzing voltage levels or a time characteristic of signals between lines of the line pair.