1. A programmable termination shunt comprising:
a multi-frequency shunt circuit comprising a plurality of selectable shunt frequencies defined by banks of inductor-capacitor circuit branches each having an associated inductance and capacitance;
a switching circuit connected to the multi-frequency shunt circuit; and
a processor coupled to the multi-frequency shunt circuit via said switching circuit, said processor adapted to set a termination frequency of the shunt by selecting a switch setting within the switching circuit that selects one of said selectable shunt frequencies in the multi-frequency shunt circuit.
2. The programmable termination shunt of claim 1, wherein the multi-frequency shunt circuit is adapted to be coupled between rails of a railroad track and said processor is adapted to receive a termination frequency programming signal from at least one of the rails.
3. The programmable termination shunt of claim 2, wherein the termination frequency programming signal comprises a new termination frequency.
4. The programmable termination shunt of claim 2, wherein the termination frequency programming signal comprises a desired inductance and capacitance of said multi-frequency shunt circuit.
5. The programmable termination shunt of claim 2, wherein the termination frequency programming signal comprises a switch setting for the switching circuit.
6. The programmable termination shunt of claim 2, wherein said processor and said multi-frequency shunt circuit are powered by signals transmitted over the rails.
7. The programmable termination shunt of claim 6, wherein said shunt further comprises an energy storage element for storing power transmitted over the rails.
8. The programmable termination shunt of claim 1, wherein said processor is adapted to receive a termination frequency programming signal from a wireless communication link.
9. The programmable termination shunt of claim 8, wherein the termination frequency programming signal comprises one of a new termination frequency, a desired inductance and capacitance of components within said multi-frequency shunt circuit or a switch setting for said switching circuit.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A patterned article, comprising:
a substrate;
a continuous ultra-thin metal-containing film or film stack disposed on a surface of the substrate; and
a plurality of discrete dewetted metal-containing islands disposed on a surface of the continuous ultra-thin metal-containing film or film stack;
wherein the plurality of discrete metal-containing dewetted islands have an average height of about 5 nanometers to about 300 nanometers, an average longest lateral cross-sectional dimension of about 10 nanometers to about 1000 nanometers, and are randomly oriented on the surface of the continuous ultra-thin metal-containing film or film stack so as to cover less than or equal to about 0.5 of an area fraction of the surface of the continuous ultra-thin metal-containing film or film stack.
2. The patterned article of claim 1, wherein the continuous ultra-thin metal-containing film or film stack has an average thickness of less than or equal to about 5 nanometers.
3. The patterned article of claim 1, wherein the substrate has an average thickness of about 0.02 millimeters to about 2 millimeters.
4. The patterned article of claim 1, wherein the plurality of discrete dewetted metal-containing islands comprise a metal in its elemental form or a metal that is a constituent of an alloy.
5. The patterned article of claim 1, wherein the average height of the plurality of discrete metal-containing dewetted islands is about 20 nanometers to about 100 nanometers.
6. The patterned article of claim 1, wherein the average longest lateral cross-sectional dimension of the plurality of discrete metal-containing dewetted islands is about 30 nanometers to about 200 nanometers.
7. The patterned article of claim 1, wherein the area fraction covered by the plurality of discrete metal-containing dewetted islands is less than or equal to about 0.25 of the surface of the continuous ultra-thin metal-containing film or film stack.
8. The patterned article of claim 1, wherein the patterned article is at least a portion of an anti-reflection coating, a metal mask, a localized surface plasmon resonance structure, a catalyst, a catalyst support, an anti-virus coating, or an antibacterial coating.
9. A patterned article, comprising
a strengthened alkali aluminosilicate glass substrate;
a continuous ultra-thin metal-containing film or film stack disposed on a surface of the strengthened alkali aluminosilicate glass substrate, wherein the continuous ultra-thin metal-containing film or film stack has an average thickness of less than or equal to about 5 nanometers; and
a plurality of discrete dewetted metal-containing islands disposed on a surface of the continuous ultra-thin metal-containing film or film stack;
wherein the plurality of discrete metal-containing dewetted islands have an average height of about less than or equal to about 130 nanometers, an average longest lateral cross-sectional dimension of about 50 nanometers to about 200 nanometers, and are randomly oriented on the surface of the continuous ultra-thin metal-containing film or film stack so as to cover less than or equal to about 0.1 of an area fraction of the surface of the continuous ultra-thin metal-containing film or film stack.
10. The patterned article of claim 9, wherein the plurality of discrete dewetted metal-containing islands comprise a metal in its elemental form or a metal that is a constituent of an alloy.