1. A method comprising:
providing a wafer assembly comprising multiple semiconductor layers disposed on a substrate;
defining a plurality of semiconductor dies and one or more intermediate structures between at least a first die of the plurality and at least a second die adjacent to the first die by removing material from the multiple semiconductor layers; and
applying a first force to the first die as part of an operation to remove the substrate from the wafer assembly.
2. The method of claim 1, wherein applying the first force comprises applying a laser pulse to the first die covering an area substantially equal to the first die.
3. The method of claim 1, wherein applying the first force comprises applying a laser pulse to the first die covering an area greater than the first die without encroaching on any dies adjacent to the first die.
4. The method of claim 1, further comprising applying a second force to the second die.
5. The method of claim 4, wherein the first and second forces are from laser pulses that overlap in the region of the one or more intermediate structures.
6. The method of claim 1, wherein removing material from the multiple semiconductor layers comprises at least one of dry etching, wet etching, laser cutting, saw cutting, diamond cutting, or water jetting.
7. The method of claim 1, wherein defining the one or more intermediate structures comprises etching a mesa between at least the first and second dies and applying at least one of dry etching, wet etching, a laser cut, a saw cut, or a water jet to the mesa.
8. The method of claim 1, wherein the plurality of semiconductor dies are light-emitting diode (LED) dies, power device dies, laser diode dies, or vertical cavity surface emitting device dies.
9. A method comprising:
providing a wafer assembly comprising:
an n-doped layer disposed above a substrate;
an active layer for emitting light disposed above the n-doped layer; and
a p-doped layer disposed above the active layer;
defining a plurality of vertical light-emitting diode (VLED) dies and one or more intermediate structures between at least a first VLED die of the plurality and at least a second VLED die adjacent to the first VLED die by removing material from at least the p-doped layer; and
applying a first force to the first VLED die as part of an operation to remove the substrate from the wafer assembly.
10. The method of claim 9, wherein the n-doped layer, the active layer, or the p-doped layer comprises at least one of GaN, AlGaN, InGaN, or AlInGaN.
11. The method of claim 9, wherein the one or more intermediate structures comprise an n-doped layer with a height less than or equal to the height of the n-doped layer in the first and second VLED dies.
12. The method of claim 9, wherein defining the one or more intermediate structures comprises at least one of dry etching, wet etching, laser cutting, saw cutting, or applying a water jet.
13. The method of claim 9, wherein defining the one or more intermediate structures comprises:
etching a mesa between the first and second VLED dies; and
applying at least one of dry etching, wet etching, a laser cut, a saw cut, or a water jet to the mesa.
14. The method of claim 9, wherein the one or more intermediate structures has a different height than the first and second dies.
15. The method of claim 9, wherein the one or more intermediate structures has a different composition than the first and second VLED dies.
16. The method of claim 9, wherein a distance between one of the intermediate structures and either of the first and second VLED dies is less than 300 \u03bcm.
17. A method comprising:
providing a wafer assembly comprising multiple semiconductor layers disposed on a substrate;
forming trenches in the multiple semiconductor layers to define a plurality of semiconductor dies such that there are two or more trenches and one or more intermediate structures between at least a first die of the plurality and at least a second die adjacent to the first die; and
applying a first force to the first die as part of an operation to remove the substrate from the wafer assembly.
18. The method of claim 17, wherein at least one of the trenches has a width between 0.1 \u03bcm and 300 \u03bcm.
19. The method of claim 17, wherein at least one of the trenches has a depth extending into the substrate by 10 \u212b to 300 \u03bcm.
20. The method of claim 17, wherein forming the trenches comprises at least one of dry etching, wet etching, laser cutting, saw cutting, or applying a water jet.
21. A method comprising:
providing a wafer assembly comprising multiple semiconductor layers disposed on a substrate;
defining a plurality of semiconductor dies by removing material from the multiple semiconductor layers such that there is a space between a first die of the plurality and at least a second die adjacent to the first die;
disposing a material in the space between the first die and at least the second die; and
applying a first force to the first die as part of an operation to remove the substrate from the wafer assembly, wherein the material is configured to prevent damage to the at least the second die from the first force.
22. A method comprising:
providing a wafer assembly comprising multiple semiconductor layers disposed on a substrate;
defining a plurality of semiconductor dies and one or more means for preventing damage to the plurality of dies by removing material from the multiple semiconductor layers; and
applying a force to at least one of the dies as part of an operation to remove the substrate from the wafer assembly.
23. The method of claim 22, wherein the means for preventing damage to the dies comprises one or more wall structures disposed between a first die of the plurality and a second die of the plurality adjacent to the first die.
24. The method of claim 22, wherein applying the force comprises applying a laser pulse to the at least one of the dies covering at least an area of the at least one of the dies.
25. A method comprising:
providing a wafer assembly comprising multiple semiconductor layers disposed on a substrate;
defining a plurality of semiconductor dies and one or more intermediate structures between at least a first die of the plurality and at least a second die adjacent to the first die by removing material from the multiple semiconductor layers; and
applying a first laser pulse to the first die as part of an operation to remove the substrate from the wafer assembly.
26. The method of claim 25, wherein applying the first laser pulse comprises applying the first laser pulse to the first die covering an area substantially equal to the first die.
27. The method of claim 25, wherein applying the first laser pulse comprises applying the first laser pulse to the first die covering an area greater than the first die without encroaching on any dies adjacent to the first die.
28. The method of claim 25, further comprising applying a second laser pulse to the second die.
29. The method of claim 28, wherein the first and second laser pulses overlap in the region of the one or more intermediate structures.
30. The method of claim 25, wherein removing material from the multiple semiconductor layers comprises at least one of dry etching, wet etching, laser cutting, saw cutting, diamond cutting, or water jetting.
31. The method of claim 25, wherein defining the one or more intermediate structures comprises etching a mesa between at least the first and second dies and applying at least one of dry etching, wet etching, a laser cut, a saw cut, or a water jet to the mesa.
32. The method of claim 25, wherein the plurality of semiconductor dies are light-emitting diode (LED) dies, power device dies, laser diode dies, or vertical cavity surface emitting device dies.
33. A method comprising:
providing a wafer assembly comprising multiple semiconductor layers disposed on a substrate;
defining a plurality of semiconductor dies and one or more means for preventing damage to the plurality of dies by removing material from the multiple semiconductor layers; and
applying a laser pulse to at least one of the dies as part of an operation to remove the substrate from the wafer assembly.
34. The method of claim 33, wherein the means for preventing damage to the dies comprises one or more wall structures disposed between a first die of the plurality and a second die of the plurality adjacent to the first die.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. What we claim as our invention is the KufBag to be a straitjacket for the hands, the KufBag encases the hands along with the handcuffs while using plastic ties secured through grommets holes while separating or departmentalizing the hands to prevent grasping ability, to protect the transporter.
2. What we claim as our invention is the KufBag protects the transporter from bio-hazardous infection such as HIV and Hepatitis health risks, because the prisoners cannot us the hands to scratch or break surface skin of the transporter.