1-31. (canceled)
32. A shroud (28) for protecting the digging edge of an excavating bucket lip (12), the lip having an inner face (13), an outer face (14), and a boss (20) that wraps around the front digging edge, the shroud (28) comprising a front working portion (66), a rear mounting portion (70) bifurcated to define an inner leg (72) and an outer leg (74) to straddle the lip (12) and the boss (20) attached to the lip (12), and including an inner corner surface (89) at the intersection of the legs (72, 74) having a generally uniform curved surface to abut a correspondingly curved front part (38) of the boss (20) that wraps around the digging edge of the tip (12), the outer leg (74) having an inner face (80) including a slot (84) for receiving an outer leg (22) of the boss (20) provided with rails (24), and the inner leg (72) having an aperture (86) to receive a lock (56) to hold the shroud (28) to the boss (20).
33. A shroud (28) in accordance with claim 1 wherein the aperture (86) includes a depression (143) to accommodate a latch component on the lock (156).
34. A shroud (28) in accordance with claim 2 wherein the depression (143) is formed in a front wall (121) of the aperture (86).
35. A shroud (28) for protecting the digging edge of an excavating bucket lip (12), the lip having an inner face (13), an outer face (14), and a boss (20) that wraps around the front digging edge, the shroud (28) comprising a front working portion (66) and a rear mounting portion (70), wherein the rear mounting portion (70) is bifurcated to define an inner leg (72), an outer leg (74) and an inner corner surface (89), the inner and outer legs (72, 74) straddle the lip (12) and the boss (20) attached to the lip (12), the outer leg (74) has an inner face (80) with a slot (84) for receiving an outer leg (22) of the boss (20) provided with rails (24), the inner leg (72) has an aperture (86) to receive a lock (56) to hold the shroud (28) to the boss (20), and the aperture (86) includes a depression (143) to accommodate a latch component on the lock (156).
36. A shroud (28) in accordance with claim 4 wherein the depression (143) is formed in front wall (121) of the aperture (86).
37. A shroud (28) in accordance with any of claims 1-5 wherein the outer leg (74) includes a rear deflector face (78) that is inclined forwardly away from the lip (12) to direct earthen material away from the shroud (28) during reverse movement of the bucket.
38. A shroud (28) for protecting the digging edge of an excavating bucket tip (12), the tip having an inner face (13), an outer face (14), and a boss (20) that wraps around the front digging edge, the shroud (28) comprising a front working portion (66) and a rear mounting portion (70), wherein the rear mounting portion (70) is bifurcated to define an inner leg (72), an outer leg (74) and an inner corner surface (89), the inner and outer legs (72, 74) straddle the lip (12) and the boss (20) attached to the lip (12), the outer leg (74) has an inner face (80) that includes a slot (84) for receiving an outer leg (22) of the boss (20) provided with rails (24), and a rear deflector face (78) that is inclined forwardly away from the tip (12) to direct earthen material away from the shroud (28) during reverse movement of the bucket, and the inner leg (72) has an aperture (86) to receive a lock (56) to hold the shroud (28) to the boss (20).
39. A shroud (28) in accordance with any of claims 1-7 wherein the slot (84) is formed by a pair of flanges (82) extending from the inner face (80) of the outer leg (74).
40. A shroud (28) for protecting the digging edge of an excavating bucket lip (12), the lip having an inner face (13), an outer face (14), and a boss (20) that wraps around the front digging edge, the shroud (28) comprising a front working portion (66) and a rear mounting portion (70), wherein the rear mounting portion (70) is bifurcated to define an inner leg (72), an outer leg (74) and an inner corner surface (89), the inner and outer legs (72, 74) straddle the lip (12) and the boss (20) attached to the lip (12), the outer leg (74) has an inner face (80) that includes a pair of flanges (82) extending from the inner face (80) of the outer leg (74) to form a slot (84) for receiving an outer leg (22) of the boss (20) provided with rails (24), and the inner leg (72) has an aperture (86) to receive a lock (56) to hold the shroud (28) to the boss (20).
41. A shroud (28) in accordance with any of claims 1-9 wherein the inner leg (72) includes an inner surface (87) and a cavity (91) in the inner surface (87) extending between the inner corner surface (89) and the aperture (86) to receive a support (50) of the boss (20) forming an abutment for lock (56).
42. A shroud (28) in accordance with claim 10 wherein the cavity (91) is defined by an upper inclined wall extending from the inner corner surface (89) to the aperture (86), and a pair of opposite sidewalls opposed to sides of the support (50).
43. A shroud (28) in accordance with any of claims 1-11 wherein the inner corner surface (89) extends at least substantially across the entire width of the shroud as a generally uniform curved surface.
44. A shroud (28) in accordance with any of claims 1-12 wherein the slot (84) has a generally T-shaped configuration.
45. A shroud (28) in accordance with any of claims 1-13 wherein the aperture (86) includes a main portion (90) for receiving a body (101) of the lock (56), and a stem portion (92) that opens in a rear wall (94) of the inner leg (72).
46. A shroud (28) in accordance with any of claims 1-14 wherein the aperture (86) includes a rear wall (88) to each side of the stem portion (92) that forms a bearing surface to abut the lock (56).
47. A shroud (28) in accordance with any of claims 1-15 wherein the aperture (86) includes an arcuate sidewall (127) to facilitate swinging of the lock (56) into and out of the aperture (86).
48. A shroud (28) in accordance with any of claims 1-16 wherein the outer leg (74) includes a rear end (33) to abut a brace (30) on the boss (20).
49. A wear assembly for protecting the digging edge of an excavating bucket lip (12), the lip having an inner face (13) and an outer face (14), the wear assembly comprising a boss (20), a shroud (28) in accordance with any of claims 1-17, and a lock (56) to hold the shroud (28) to the boss (20).
50. A wear assembly in accordance with claim 18 wherein the boss (20) includes an outer leg (22) with rails (24) extending along the outer face (14) to cooperate with the slot (84) in the outer leg (74), a front part (38) to wrap around the digging edge of the lip (12), and an inner leg (39) extending along the inner face (13), the inner leg having a support (50) with a rear wall (52) to abut the lock (56).
51. A wear assembly in accordance with claim 19 wherein the front part (38) includes a front face (48) having a uniform curved shape to bear against the inner corner surface (89) of the shroud (28).
52. A wear assembly in accordance with any of claims 18-20 wherein the lock (56) includes a body (101) having a threaded bore (109), and a threaded shank (111) received in the bore (109) and which includes a front end (117) to abut the boss (20) to tighten the fit of the shroud (28) against the boss (20).
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1-46. (canceled)
47. A method of forming a transistor gate of a recessed access device, comprising:
depositing an oxidizable material over semiconductive material of a substrate, the oxidizable material comprising an elevationally outermost surface;
depositing an oxidizing shield over the elevationally outermost surface of the oxidizable material;
etching a trench through the oxidizing shield, the oxidizable material and into the semiconductive material; the trench comprising sidewalls of the oxidizable material and sidewalls of the semiconductive material;
oxidizing the semiconductive material sidewalls and the oxidizable material sidewalls, the oxidizing shield precluding oxidation of the elevationally outermost surface of the oxidizable material during said oxidizing, the oxidizing lining the trench with dielectric material; and
depositing transistor gate electrode material into the trench over the dielectric material which lines the trench.
48. The method of claim 47 wherein the dielectric material is in contact with an elevationally innermost surface of the oxidizing shield.
49. The method of claim 47 wherein the trench comprises sidewalls of the oxidizing shield, the dielectric material not being in contact with the trench sidewalls of the oxidizing shield.
50. The method of claim 47 wherein the trench comprises sidewalls of the oxidizing shield, the dielectric material not being in contact with the trench sidewalls of the oxidizing shield and being in contact with an elevationally innermost surface of the oxidizing shield.
51. The method of claim 47 wherein the trench comprises sidewalls of the oxidizing shield and the dielectric material comprises laterally innermost sidewalls, the sidewalls of the oxidizing shield being laterally coincident with the laterally innermost sidewalls of the dielectric material.
52. The method of claim 47 comprising providing a dielectric oxide layer between the oxidizable material and the semiconductive material prior to the oxidizing.
53. The method of claim 52 wherein the dielectric oxide layer has trench sidewalls, the oxidizing forming the dielectric material over the trench sidewalls of the dielectric oxide layer.
54. The method of claim 47 comprising recessing the transistor gate electrode material within the trench in the semiconductive material.
55. The method of claim 54 wherein the recessing occurs after depositing and removing conductive material over the transistor gate electrode material within the trench.
56. The method of claim 55 wherein the recessing occurs while etching conductive material of a transistor gate stack being formed for another transistor gate that is laterally and elevationally outward of the trench.
57. The method of claim 47 comprising etching the oxidizing shield and the oxidizeable material away from the substrate after depositing the transistor gate electrode material.
58. The method of claim 57 comprising providing a dielectric oxide layer between the oxidizable material and the semiconductive material prior to the oxidizing, the dielectric oxide layer having trench sidewalls, the oxidizing forming the dielectric material over the trench sidewalls of the dielectric oxide layer which remains after etching the oxidizing shield and the oxidizable material away from the substrate.
59. A method of forming a recessed transistor gate and a non-recessed transistor gate, comprising:
depositing first gate electrode material for the non-recessed transistor gate over a substrate;
etching a trench through the first gate electrode material and into semiconductive material of the substrate for the recessed transistor gate;
forming gate electrode material for the recessed transistor gate within the trench in the semiconductive material;
forming second gate electrode material for the non-recessed transistor gate over the first gate electrode material and over the gate electrode material for the recessed transistor gate;
etching the second gate electrode material selectively relative to the first gate electrode material and etching the second gate electrode material from being received over the gate electrode material for the recessed transistor gate which is within the trench; and
after etching the second gate electrode material, anisotropically etching exposed first gate electrode material to form a gate stack for the non-recessed transistor gate which comprises the first gate electrode material and the second gate electrode material.
60. The method of claim 59 wherein etching the second gate electrode material from being received over the gate electrode material for the recessed transistor gate which is within the trench also etches and recesses the gate electrode material for the recessed transistor gate which is within the trench.
61. The method of claim 59 wherein the first gate electrode material comprises conductively doped polysilicon and the second gate electrode material comprises metal.
62. The method of claim 61 wherein the gate electrode material for the recessed transistor gate comprises metal.
63. A method of fabricating an integrated circuit, comprising:
forming a dielectric layer over a first region and a second region of a semiconductor substrate;
depositing a gate electrode layer comprising silicon over the first and second regions and over the dielectric layer;
etching a trench through the gate electrode layer, the dielectric layer and into the underlying substrate in the first region;
depositing first metallic material into the trench to serve as a transistor gate electrode of a recessed access device in the first region;
after depositing the first metallic material, removing only a portion of the first metallic material;
after removing only a portion of the first metallic material, depositing a second metallic material over the gate electrode layer and the first metallic material; and
the gate electrode layer comprising silicon comprising a gate electrode in the second region.
64. The method of claim 63 wherein the removing comprises etching.
65. The method of claim 64 wherein the first metallic material comprises a non-planar outermost surface, and the etching planarizes said surface.