1. A semiconductor device comprising:
a semiconductor base of a first conductivity type;
a first conductive coupling region of the first conductivity type provided on the semiconductor base;
a second conductive coupling region of the first conductivity type provided on the semiconductor base so as to surround the first conductive coupling region;
a first electrode group having a plurality of electrodes that is provided on the first conductive coupling region; and
a second electrode group having a plurality of electrodes that is provided on the second conductive coupling region.
2. The semiconductor device according to claim 1, wherein the semiconductor base is one well region provided on a semiconductor substrate, and the semiconductor base between the first conductive coupling region and the second conductive coupling region functions as a resistor.
3. The semiconductor device according to claim 1, wherein the semiconductor base is one well region provided on a semiconductor substrate, and has a pattern that is at least fourfold symmetric about a center of the first conductive coupling region, the semiconductor base between the first conductive coupling region and the second conductive coupling region functioning as a resistor.
4. The semiconductor device according to claim 1, wherein a peripheral electrode of the first electrode group in a predetermined number is arranged closest to an edge of the first conductive coupling region in each of four regions, and an electrode of the second electrode group in a predetermined number is arranged in each of four regions so as to face the peripheral electrode of the first electrode group.
5. The semiconductor device according to claim 1, wherein the first electrode group is distributed in a whole region from a center of the first conductive coupling region to a predetermined region, a peripheral electrode of the first electrode group in a predetermined number being arranged closest to an edge of the first conductive coupling region in each of four regions, and an electrode of the second electrode group in a predetermined number being arranged in each of four regions so as to face at least the peripheral electrode of the first electrode group in a predetermined number.
6. The semiconductor device according to claim 1, wherein the first conductive coupling region has a planar shape obtained by removing four corner parts from a quadrangle and having at least four sides, the first electrode group being prepared so that an electrode in a predetermined number is arranged along the four sides, and an electrode of the second electrode group in a predetermined number being arranged so as to face at least the electrode of the first electrode group in a predetermined number.
7. The semiconductor device according to claim 1, wherein a distance between the first conductive coupling region and the second conductive coupling region in a region in which the first electrode group faces the second electrode group is smaller than a distance between the first conductive coupling region and the second conductive coupling region in other regions.
8. A semiconductor device comprising:
a semiconductor base of a first conductivity type;
a first insulating film provided on the semiconductor base;
a first conductive coupling region of the first conductivity type in a center part and a second conductive coupling region of the first conductivity type surrounding the first conductive coupling region, the first and second conductive coupling regions being isolated from each other by the first insulating film;
a second insulating film provided on the first conductive coupling region and the second conductive coupling region;
a first electrode group having a plurality of electrodes that is provided on the first conductive coupling region via a plurality of openings in the second insulating film;
a second electrode group having a plurality of electrodes that is provided on the second conductive coupling region via a plurality of openings in the second insulating film;
a first wiring pattern coupled to a plurality of predetermined electrodes of the first electrode group; and
a second wiring pattern coupled to a plurality of predetermined electrodes of the second electrode group.
9. The semiconductor device according to claim 8, wherein a silicide metal layer is formed in the first conductive coupling region and the second conductive coupling region except for a predetermined region adjacent to the first insulating film.
10. The semiconductor device according to claim 8, wherein the semiconductor base is one well region provided on a semiconductor substrate, and the semiconductor base between the first conductive coupling region and the second conductive coupling region functions as a resistor.
11. The semiconductor device according to claim 8, wherein the semiconductor base is one well region provided on a semiconductor substrate, and has a pattern that is at least fourfold symmetric about a center of the first conductive coupling region, the semiconductor base between the first conductive coupling region and the second conductive coupling region functioning as a resistor.
12. The semiconductor device according to claim 8, wherein a peripheral electrode of the first electrode group in a predetermined number is arranged closest to an edge of the first conductive coupling region in each of four regions, and an electrode of the second electrode group in a predetermined number is arranged in each of four regions so as to face the peripheral electrode of the first electrode group.
13. The semiconductor device according to claim 8, wherein the first electrode group is distributed in a whole region from a center of the first conductive coupling region to a predetermined region, a peripheral electrode of the first electrode group in a predetermined number being arranged closest to an edge of the first conductive coupling region in each of four regions, and an electrode of the second electrode group in a predetermined number being arranged in each of four regions so as to face at least the peripheral electrode of the first electrode group in a predetermined number.
14. The semiconductor device according to claim 8, wherein the first conductive coupling region has a planar shape obtained by removing four corner parts from a quadrangle and having at least four sides, the first electrode group being prepared so that an electrode in a predetermined number is arranged along the four sides, and an electrode of the second electrode group in a predetermined number being arranged so as to face at least the electrode of the first electrode group in a predetermined number.
15. The semiconductor device according to claim 8, wherein a distance between the first conductive coupling region and the second conductive coupling region in a region in which the first electrode group faces the second electrode group is smaller than a distance between the first conductive coupling region and the second conductive coupling region in other regions.
16. A method for manufacturing a semiconductor device, comprising:
forming an annular first insulating film on a semiconductor base;
forming, with using the first insulating film as a mask, a first conductive coupling region of a first conductivity type in a center part of the semiconductor base and a second conductive coupling region of the first conductivity type in a periphery of the first conductive coupling region;
forming a second insulating film on the first conductive coupling region and the second conductive coupling region; and
forming a first electrode group and a second electrode group that have a plurality of electrodes on the first conductive coupling region and the second conductive coupling region, respectively, via a plurality of openings in the second insulating film.
17. The method for manufacturing a semiconductor device according to claim 16, further comprising forming a first wiring pattern coupled to a plurality of predetermined electrodes of the first electrode group and a second wiring pattern coupled to a plurality of predetermined electrodes of the second electrode group.
18. The method for manufacturing a semiconductor device according to claim 16, wherein the semiconductor base is one well region provided on a semiconductor substrate, and forms a resistor, between the first conductive coupling region and the second conductive coupling region, that is at least fourfold symmetric about a center of the first conductive coupling region.
19. The method for manufacturing a semiconductor device according to claim 16, wherein an inner circumference of the first insulating film has an octagon shape that has at least longitudinal four sides, and an outer circumference forms regions of four sides facing the four sides, a width between the inner and outer circumferences in the regions of four sides being smaller than a width between the inner and outer circumferences in four corner regions.
20. The method for manufacturing a semiconductor device according to claim 16, further comprising, prior to the step of forming the second insulating film:
forming a protective layer for preventing silicidation that covers a predetermined region, of the first conductive coupling region and the second conductive coupling region, adjacent to at least the first insulating film; and
forming a silicide metal layer on the first conductive coupling region and the second conductive coupling region except for the predetermined region.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A hair removal device comprising: a handle having a first interior wall and a second opposing interior wall that has a tapered surface; a cover removably mounted to the handle; and a dispensing unit removably mounted within the handle, the dispensing unit comprising a reservoir having a second connector, the reservoir containing a liquid, and a pump having a first connector, wherein the first connector and the second connector are spaced apart in a first position and in contact in a second position, wherein mounting the cover to the handle forces the dispensing unit into the handle while urging the second connector to slide along the tapered surface from the first position to the second position wherein the pump is not in liquid communication with the reservoir in the first position and the pump is in liquid communication with the reservoir in the second position.
2. The hair removal device of claim 1 wherein the first and second interior walls are segmented.
3. The hair removal device of claim 1 wherein the reservoir is a laminated foil sachet that is heat sealed around one of the connectors.
4. The hair removal device of claim 1 further comprising a reservoir conduit slidably engaged with one of the connectors, the reservoir conduit having one or more apertures.
5. The hair removal device of claim 1 further comprising a reservoir conduit positioned within one of the connectors, the reservoir conduit having one or more apertures.
6. The hair removal device according to any one of claims 1 to 5 wherein the dispensing unit becomes locked once moved to the second position.
7. The hair removal device according to any one of claims 1 to 5 wherein the first and second connectors each have a shoulder and the shoulders are spaced apart in the first position and the shoulders are in contact in the second position.
8. The hair removal device of claim of claim 4 or 5 wherein the one or more apertures of the reservoir conduit are blocked by one of the connectors in the first position preventing liquid communication between the reservoir and the pump.
9. The hair removal device of claim 4 or 5 wherein the one or more apertures of the reservoir conduit are liquid communication with the reservoir in the second position allowing liquid communication between the reservoir and the pump.
10. The hair removal device according to any one of claims 1 to 5 wherein the dispensing unit and or the handle provide an audible feedback when the dispensing unit is placed in the second position.