1. A method of treating colon or rectum cancer comprising administering to a mammal a therapeutically effective amount of a non-fermented osmotic polyol laxative.
2. The method of claim 1, wherein the non-fermented osmotic laxative is polyethylene glycol or polyethylenepolypropylene glycol, a mixture or a derivative thereof.
3. The method of claim 2, wherein the polyethylene glycol or the derivative thereof has a molecular weight of more than approximately 400, and has a high molecular weight of about 3000 to about 9000 daltons.
4. The method of claim 2, wherein the polyethylene glycol or the derivative thereof has a molecular weight of more than approximately 1000, and has a high molecular weight of about 3000 to about 9000 daltons.
5. The method of claim 2, wherein the polyethylene glycol or the derivative thereof has a molecular weight of more than approximately 400, and has a high molecular weight of about 8000 daltons.
6. A method of preventing colon or rectum cancer comprising administering to a mammal a therapeutically effective amount of a non-fermented osmotic polyol laxative.
7. The method of claim 6, wherein the non-fermented osmotic laxative is polyethylene glycol or polyethylenepolypropylene glycol, a mixture or a derivative thereof.
8. The method of claim 7, wherein the polyethylene glycol or the derivative thereof has a molecular weight of more than approximately 400, and has a high molecular weight of about 3000 to about 9000 daltons.
9. The method of claim 7, wherein the polyethylene glycol or the derivative thereof has a molecular weight of more than approximately 1000, and has a high molecular weight of about 3000 to about 9000 daltons.
10. The method of claim 7, wherein the polyethylene glycol or the derivative thereof has a molecular weight of more than approximately 400, and has a high molecular weight of about 8000 daltons.
11. The method of claim 1, wherein said mammal is selected from the group consisting of persons genetically suffering from familial polyposis or Lynch’s syndrome, elderly persons and persons carrying risk factors.
12. The method of claim 6, wherein said mammal is selected from the group consisting of persons genetically suffering from familial polyposis or Lynch’s syndrome, elderly persons carrying risk factors.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device comprising:
a first wiring extending in a first direction and coupled to a plurality of first memory cells;
a second wiring extending in the first direction and coupled to a plurality of second memory cells;
a third wiring extending in the first direction and coupled to a plurality of third memory cells;
a fourth wiring extending in the first direction and coupled to a plurality of fourth memory cells;
a first contact provided at one end of the first wiring;
a second contact provided at one end of the second wiring;
a third contact provided at one end of the third wiring; and
a fourth contact provided at one end of the fourth wiring,
wherein the plurality of first to fourth memory cells are formed in a first rectangular region,
wherein the first and fourth contacts are formed in a second region, wherein the second and third contacts are formed in a third region,
wherein the first rectangular region is provided between the second region and the third region,
wherein a first side of the first rectangular region extends in a second direction perpendicular to the first direction, and
wherein a distance between the other end of the second wiring and the first side of the first rectangular region is shorter than a distance between the other end of the third wiring and the first side of the first rectangular region.
2. A semiconductor device according to claim 1,
wherein the other end of the second wiring and the other end of the third wiring are formed in a fourth region, and
wherein the fourth region is provided between the first rectangular region and the second region.
3. A semiconductor device according to claim 1, wherein a distance between the first contact and the other side of the first rectangular region and a distance between the fourth contact and the other side of the second region are same length.
4. A semiconductor device according to claim 1, further comprising:
a plurality of sense amplifiers coupled to the first to fourth wirings,
wherein the first to fourth wirings are bit lines.
5. A semiconductor device according to claim 1, further comprising:
a plurality of word drivers coupled to the first to fourth wirings,
wherein the first to fourth wirings are word lines.
6. A semiconductor device according to claim 1, wherein a distance between the other end of the second wiring and the other end of the third wiring in the first direction is longer than a distance between the second wiring and the third wiring in the second direction.
7. A semiconductor device according to claim 1, wherein the plurality of first to fourth memory cells are DRAM memory cells.
8. A semiconductor device according to claim 1, wherein the second and third wirings are adjacent wirings.