1. A flow directing insert for a reactor chamber in a reactor, the reactor chamber comprising an inlet at one end of the chamber and an outlet at another end of the chamber, at least one wall of the reactor chamber including a heat conductive material or a membrane; and wherein the insert comprises a plurality of units arranged in rows, the units cooperating with walls defined by the chamber to form a channel for a fluid, the channel extending from a first side of the chamber to a second side of the chamber and back again to the first side back and forth a number of times, and wherein the units are arranged such that the fluid is forced to flow therebetween in a serpentine path.
2. A flow directing insert according to claim 1, wherein each of the units defines at least one plane surface that abuts one wall of the reactor chamber or the plane surface of another unit and has an extension that is less than the distance between opposite walls of the reactor chamber.
3. A flow directing insert according to claim 1, wherein each row of units is separated from the next row of units by delimiting means extending between and abutting the walls of the reactor chamber in a tightening manner.
4. A flow directing insert according to claim 1, wherein a side of the unit generally opposite to the plane surface has a softly bent shape.
5. A flow directing insert according to claim 1, wherein a connection between two adjacent rows of units in the reactor chamber is defined by an opening between one end of a row and a reactor side and between the next row of units and the reactor side, such that the fluid may flow from one row to the other in the created empty space.
6. A flow directing insert according to claim 1, wherein at least two units in at least two rows one adjacent the other are arranged such that an opening in one unit cooperates with an opening in the delimiting means together with an opening in the second unit to create passages between the inlet at one end of the reactor chamber and a flow path in the reactor chamber or through said chamber.
7. A flow directing insert according to claim 1, wherein a number of rows of units and the delimiting means are produced in one piece.
8. A flow directing insert according to claim 1, wherein a number of units and limits defined thereby are produced in one piece as a column.
9. A flow directing insert according to claim 1, wherein the insert is manufactured in at least one of polyetheretherketone (PEEK), carbon, glass and metal.
10. A flow directing insert according to claim 4, wherein the softly bent shape is cylindrical.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A non-volatile storage system, comprising:
non-volatile storage elements;
control lines in communication with said non-volatile storage elements; and
a managing circuit in communication with said non-volatile storage elements and said control lines, said managing circuit applies a charge to a first set of said control lines associated with a first set of said non-volatile storage elements that are in a first programmed condition, said managing circuit identifies a second set of said non-volatile storage elements that have a neighbor non-volatile storage element in said first programmed condition by detecting said charge in a second set of said control lines that are adjacent to said first set of said control lines in response to said charge on said first set of said control lines, said second set of said control lines are associated with said second set of said non-volatile storage elements.
2. A non-volatile storage system according to claim 1, wherein:
said managing circuit determines that said first set of said non-volatile storage elements are in said first programmed condition prior to said applying said charge.
3. A non-volatile storage system according to claim 1, wherein:
said first programmed condition corresponds to a highest programmed state of three or more programmed states and one erased state; and
said identifying of said second set of said non-volatile storage elements that have said neighbor non-volatile storage element in said first programmed condition is only performed on non-volatile storage elements that are in a first programmed state of said three programmed states and one erased state.
4. A non-volatile storage system according to claim 1, wherein:
said first set of said control lines are bit lines; and
said second set of said control lines are bit lines.
5. A non-volatile storage system, comprising:
non-volatile storage elements;
control lines in communication with said non-volatile storage elements; and
a managing circuit in communication with said non-volatile storage elements and said control lines, said managing circuit applies a charge to a first set of said control lines associated with a first set of said non-volatile storage elements that are in a first programmed condition, said managing circuit identifies a second set of said non-volatile storage elements that have a neighbor non-volatile storage element in said first programmed condition by detecting said charge in a second set of said control lines that are adjacent to said first set of said control lines, said second set of said control lines are associated with said second set of said non-volatile storage elements, said managing circuit detects said charge in a particular bit line of said second set of said control lines by determining whether a capacitor charges in order to discharge said particular control line.
6. A non-volatile storage system according to claim 1, wherein:
said managing circuit reads said second set of said non-volatile storage elements using compensation for coupling from said first set of said non-volatile storage elements.
7. A non-volatile storage system according to claim 6, further comprising:
said managing circuit reads said first set of said non-volatile storage elements without using compensation for floating gate coupling.
8. A non-volatile storage system according to claim 6, wherein:
said compensation includes reading at a read compare level plus an offset.
9. A non-volatile storage system according to claim 1, wherein:
said first set of said non-volatile storage elements and said second set of said non-volatile storage elements are NAND flash memory devices.
10. A non-volatile storage system according to claim 1, wherein:
said first set of said non-volatile storage elements and said second set of said non-volatile storage elements are multi-state flash memory devices.
11. A non-volatile storage system, comprising:
non-volatile storage elements;
word lines in communication with said non-volatile storage elements;
bit lines in communication with said non-volatile storage elements; and
a managing circuit in communication with said bit lines and said word lines, said managing circuit applies a first charge to a first set of said bit lines that are in communication with a first set of said non-volatile storage elements that are in a first programmed condition, said managing circuit identifies a second set of said non-volatile storage elements that have a neighbor non-volatile storage element in said first programmed condition by sensing a first predetermined charge level in a second set of said bit lines that are adjacent to said first set of said bit lines in response to the first charge on the first set of said bit lines, said second set of said bit lines are in communication with said second set of said non-volatile storage elements.
12. A non-volatile storage system according to claim 11, wherein:
said managing circuit applies a second charge to the first set of said bit lines; and
said managing circuit identifies a third set of said non-volatile storage elements that have two neighbor non-volatile storage elements in said first programmed condition by sensing a second predetermined charge level in the second set of said bit lines that are adjacent to said first set of said bit lines in response to the second charge on the first set of bit lines.
13. A non-volatile storage system according to claim 11, wherein:
said managing circuit includes a plurality of sense amplifier circuits in communication with the bit lines, sense amplifier circuits in communication with neighboring bit lines are not in communication with each other with respect to said first charge or said first predetermined charge level.
14. A non-volatile storage system according to claim 11, wherein:
said non-volatile storage elements are NAND multi-state flash memory devices.