1. An information processing apparatus that is capable of communicating with a web server and includes a web browser that displays an operation screen provided by the web server, the apparatus comprising:
an acceptance unit configured to accept an instruction for screen transition from a user;
a processing unit configured to execute a job instructed by the web server;
a management unit configured to manage a status of the job executed by the processing unit; and
a control unit configured to restrict, based on the status of the job managed by the management unit, acceptance of the instruction by the accepting unit while the processing unit is executing the job.
2. The information processing apparatus according to claim 1, wherein the screen transition is caused by operating a predetermined button displayed on the operation screen.
3. (canceled)
4. The information processing apparatus according to claim 1, further comprising:
a display control unit configured to display a confirmation screen for asking the user whether to perform screen transition,
wherein the control unit permits acceptance of the instruction by the acceptance unit if the user permits screen transition via the confirmation screen.
5. A control method for an information processing apparatus that is capable of communicating with a web server and includes a web browser that displays an operation screen provided by the web server, the method comprising:
accepting an instruction for screen transition from a user;
executing a job instructed by the web server;
managing a status of the executed job; and
controlling to restrict, based on the managed status of the executed job, acceptance of the instruction by the accepting step while the job is being executed.
6. A non-transitory computer-readable storage medium which stores a program for causing a computer to function as an information processing apparatus that is capable of communicating with a web server and includes a web browser that displays an operation screen provided by the web server, the program comprising:
an acceptance step of accepting an instruction for screen transition from a user;
a processing step of executing a job instructed by the web server;
a management step of managing a status of the executed job; and
a control step of restricting, based on the managed status of the job, acceptance of the instruction by the accepting step while the job is being executed.
7. An information processing apparatus that is capable of communicating with a web server and includes a web browser that displays an operation screen provided by the web server, the apparatus comprising:
an acceptance unit configured to accept an instruction for screen transition from a user;
a processing unit configured to execute processing requested by the web server in response to an operation performed by the user using the operation screen displayed by the web browser;
a determination unit configured to determine whether a prohibition request indicating to prohibit the screen transition has been provided by the web server together with the operation screen; and
a control unit configured to restrict acceptance of the instruction by the acceptance unit while the processing unit is executing the processing, if the determination unit determines that the prohibition request has been provided.
8. A control method for an information processing apparatus that is capable of communicating with a web server and includes a web browser that displays an operation screen provided by the web server, the method comprising:
accepting an instruction for screen transition from a user;
executing processing requested by the web server in response to an operation performed by the user using the operation screen displayed by the web browser;
determining whether a prohibition request indicating to prohibit the screen transition has been provided by the web server together with the operation screen; and
controlling to restrict acceptance of the instruction in the acceptance step while the processing is being executed, if it is determined in the determination that the prohibition request has been provided.
9. A non-transitory computer-readable storage medium which stores a program for causing a computer to function as an information processing apparatus that is capable of communicating with a web server and includes a web browser that displays an operation screen provided by the web server, the program comprising:
an acceptance step of accepting an instruction for screen transition from a user;
a processing step of executing processing requested by the web server in response to an operation performed by the user using the operation screen displayed by the web browser;
a determination step of determining whether a prohibition request indicating to prohibit the screen transition has been provided by the web server together with the operation screen; and
a control step of restricting acceptance of the instruction by the acceptance step while the processing is being executed, if it is determined in the determination step that the prohibition request has been provided.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A trench MOSFET with a plurality of transistor cells in active area and multiple trenched floating gates in termination area, comprising:
a substrate of a first conductivity type;
an epitaxial layer of said first conductivity type grown on said substrate, said epitaxial layer having a lower doping concentration than said substrate;
a plurality of source regions of said first conductivity type formed near top surface of said epitaxial layer only within said active area, said source regions having a doping concentration higher than said epitaxial layer;
a plurality of first type body regions of a second conductivity type formed beneath said source regions in said active area;
a plurality of second type body regions of said second conductivity type formed into said epitaxial layer from top surface of said epitaxial layer around outside of said active area including said termination area;
said source regions being not disposed in the top of said second type body regions;
an insulation layer formed on said epitaxial layer;
a plurality of first type gate trenches in active area surrounded by said source regions and said first type body regions, extending into said epitaxial layer and filled with gate conductive layer over gate oxide layer as first type trenched gates of said transistor cells for current conduction;
at least one second type trenched gate having gate oxide layer formed thereon, said second trenched gate being wider and deeper than said first type trenched gates, surrounded by said second type body region and extending into said epitaxial layer and filled with gate conductive layer as trenched gates for gate connection;
at least three third type trenched gates in parallel formed in termination area around outside of said active area having said gate oxide layer formed thereon, said third type trenched gates surrounded by said second type body region and extended into said epitaxial layer and filled with said gate conductive layer as trenched floating gates with floating voltage for sustaining breakdown voltage in termination area, said third type trenched gates having trench depth equal to or deeper than body junction of said second type body regions;
each said second type body region between two adjacent said trenched floating gates in termination area having floating voltage;
a plurality of trenched source-body contacts filled with metal plugs padded by a barrier layer, each penetrating through said insulation layer and one of said source regions and extending into one of said first type body regions between two adjacent said first type trenched gates, said metal plugs being connected to a first metal layer formed on said insulation layer as source metal;
at least one trenched gate contact filled with said metal plug padded by said barrier layer, penetrating through said insulation layer and extending into said gate conductive layer, said metal plug being connected to a second metal layer on said insulation layer serving as gate metal; and
a drain metal on rear side of said substrate.
2. The MOSFET of claim 1 further comprising a body contact region of said second conductivity type underneath each of said plurality of trenched source-body contact, said body contact region having a higher doping concentration than said first body region.
3. The MOSFET of claim 1, wherein said third type trenched gates as trenched floating gates in said termination area have same trench width and depth as said first type trenched gates in said active area.
4. The MOSFET of claim 1, wherein said third type trenched gates as trenched floating gates in said termination area have wider trench width than said first type trenched gates in said active area.
5. The MOSFET of claim 1, wherein the width of said third type trenched gates as trenched floating gates in termination area increases toward the edge of said termination area.
6. The MOSFET of claim 1, wherein the width of said third type trenched gates as trenched floating gates in termination area decreases toward the edge of said termination area.
7. The MOSFET of claim 1, wherein said first type trenched gates in active area are equal to or shallower than said first type body region.
8. The MOSFET of claim 1, wherein said first type trenched gates in active area are deeper than said first type body region.
9. The MOSFET of claim 7, wherein there is a doped region of said first conductivity type with doping concentration higher than said epitaxial layer wrapping each bottom of said plurality of said first type trenched gates in active area, said second type trenched gate for gate connection and said third type trenched gates in termination area.
10. The MOSFET of claim 1, wherein the trench space between every two adjacent of said third type trenched gates in termination area is equal.
11. The MOSFET of claim 1, wherein the trench space between every two adjacent of said third type trenched gates in termination area is increased toward the edge of said termination area.
12. The MOSFET of claim 1, wherein said metal plug is Tungsten (W) or Al alloys.
13. The MOSFET of claim 1, wherein said barrier layer is TiTiN or CoTiN or TaTiN.
14. The MOSFET of claim 1 further comprising a resistance reduction layer Ti or TiN padded between said source metal and metal plugs, and said gate metal and metal plugs.
15. The MOSFET of claim 1, wherein said source metal and said gate metal are Al alloys, Cu or NiAg.
16. The MOSFET of claim 1, wherein said plurality of transistor cells are closed cells.
17. The MOSFET of claim 1, wherein said plurality of transistor cells are stripe cells.
18. The MOSFET of claim 1, wherein said second type body regions between said second type trenched gate and adjacent said third type trenched gate are electrically connected to said source region.
19. The MOSFET of claim 1, wherein said second type regions between said second type trenched gate and adjacent said third type trenched gate is not electrically connected to said source regions and have floating voltage.
20. The MOSFET of claim 1 further comprising a trenched body contact filled with said metal plug padded by said barrier layer, penetrating through said insulation layer and extending into said second type body region between said first type trenched gate and adjacent said second type trenched gate, said metal plug being connected to said source metal.
21. The MOSFET of claim 20 further comprising a body contact region underneath each of said trenched body contact, said body contact region having said second conductivity type with higher doping concentration than said second type body regions.
22. The MOSFET of claim 1, there is no said trenched body contact of claim 20 into said second type body region between said first type trenched gates and adjacent said second type trenched gate.