Author: claimsbot

1. An athletic ball training device comprising a) a frame, scaffold or base having a top, a bottom, and two sides, b) a mesh or fabric adapted to attach to or drape over said frame, scaffold or base, and c) one or more pouches attached to or formed by said mesh or fabric, wherein said one or more pouches are adapted to receive a sports ball therein.
2. The device of claim 1, wherein said one or more pouches are defined by a substantially arc shaped border on at least one side and wherein said substantially arc shaped border defines an aperture of sufficient size to allow passage of an athletic ball.
3. The device of claim 1 comprising at least 3 pouches.
4. The device of claim 1 further comprising a means of rolling connected to the bottom thereof.
5. The device of claim 4 wherein the means of rolling comprises three or more wheels.
6. The device of claim 5 wherein said three or more wheels are lockable.
7. The device according to claim 1 being about 7 feet to about 9 feet tall.
8. The device according to claim 1 being about 2 feet to about 3 feet wide.
9. The device according to claim 1 wherein said mesh or fabric is adapted to substantially encase at least three vertical members of the scaffolding, frame or base and wherein said mesh or fabric is adapted to substantially encase at least three horizontal members of the scaffolding, frame or base at a top of the device and wherein said mesh or fabric is adapted to substantially encase at least three horizontal members of the scaffolding, frame or base at a bottom of the device.
10. The device according to claim 1 wherein said scaffolding, frame or base is formed of an aluminum.
11. The device according to claim 1 wherein said scaffolding, frame or base is formed of a plastic.
12. The device according to claim 1 wherein said sports ball is a baseball.
13. The device according to claim 1 wherein said sports ball is a soccer ball.
14. The device according to claim 1 wherein said sports ball is a football.
15. An athletic ball training device comprising a) a frame, scaffold or base having a top, a bottom, and two sides, b) a mesh or fabric adapted to attach to or drape over said frame, scaffold or base, c) one or more pouches attached to or formed by said mesh or fabric, wherein said one or more pouches are adapted to receive a sports ball therein, and d) three or more wheels.
16. The device of claim 15, wherein said one or more pouches are defined by a substantially arc shaped border on at least one side and wherein said substantially arc shaped border defines an aperture of sufficient size to allow passage of an athletic ball.
17. The device of claim 15 comprising at least 3 pouches.
18. The device of claim 15, wherein said mesh or fabric is selected from the group consisting of knitted nylon, cotton, hemp, polypropylene, and rayon.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A battery cover assembly for a portable electronic device, the battery cover assembly comprising:
a housing defining a latching groove;
a cover hinged to the housing, the cover defining a button hole and a receiving groove, the button hole and the receiving groove communicating with each other;
a locking mechanism latching the cover to the housing, the locking mechanism comprising:
a button slidably engaging with the button hole of the cover, the button including a slidable plate defining a receiving hole;
a spring, one end of the spring received in the receiving hole, and the other end of the spring received in the receiving groove of the cover, and the spring providing an elastic force to the button for allowing the button to lock with the latching groove.
2. The battery cover assembly as claimed in claim 1, wherein the cover defines a slot the slot communicates with one end of the cover, the slot and the receiving groove are positioned at opposite sides of the button hole.
3. The battery cover assembly as claimed in claim 1, wherein the button includes a connecting portion and an operation portion, the slidable plate is parallel to the operation portion, and one end of the slidable plate is connected to a middle area of the operation portion with the connecting portion.
4. The battery cover assembly as claimed in claim 1, further comprising a hinge mechanism, wherein the hinge mechanism includes a shaft and a torsional spring, the torsional spring is placed around the shaft, and rotatably connects the cover to the housing.
5. The battery cover assembly as claimed in claim 4, wherein the cover includes a pivot end defining a pivot hole, the housing defines fixed holes in each side end thereof, the shaft passes through the pivot hole, and two ends of the shaft are received in the fixed holes, one end of the torsional spring is fixed in the fixed hole, and the other end thereof is fixed in the pivot hole.
6. A portable electronic device comprising:
a housing defining a latching groove;
a cover hinged to the housing, the cover defining a button hole, a slot and a receiving groove, the slot and the receiving groove being positioned at opposite sides of the button hole;
a locking mechanism latching the cover to the housing, the locking mechanism comprising:
a button slidably engaging in the button hole and the slot;
an elastic element disposed between the button and the cover, and the elastic element providing an elastic force to the button for allowing the button to lock with the latching groove.
7. The portable electronic device as claimed in claim 6, wherein the button includes a slidable plate, a connecting portion and an operation portion, the slidable plate is parallel to the operation portion, and one end of the slidable plate is connected to a middle area of the operation portion with the connecting portion.
8. The portable electronic device as claimed in claim 7, wherein the slidable plate defines a receiving hole, one end of the elastic element is received in the receiving hole, and the other end of the elastic element is received in the receiving groove.

1. A method of detecting and correcting a transmission error in a configuration bitstream for a programmable logic device (PLD), the method comprising:
receiving the configuration bitstream;
retrieving first and second error correcting codes from the configuration bitstream;
changing a value of at least one bit in the configuration bitstream based on each of the first and second error correcting codes, whereby corrected data is generated; and
configuring the PLD utilizing the corrected data, wherein:
the configuration bitstream comprises a plurality of bitstream words comprising at least one instruction word and a plurality of configuration data words; and
the first error correcting code is applied to the instruction word and the second error correcting code is applied to the configuration data words.
2. The method of claim 1, wherein at least one of the first and second error correcting codes is a Hamming code.
3. The method of claim 1, wherein:
the configuration bitstream comprises a plurality of bitstream words; and
changing the value of at least one bit in the configuration bitstream comprises changing the value of at least one bit in an erroneous bitstream word prior to receipt of a following bitstream word.
4. The method of claim 3, wherein the plurality of bitstream words comprises at least one instruction word and a plurality of configuration data words, and the erroneous bitstream word comprises an instruction word.
5. The method of claim 3, wherein the plurality of bitstream words comprises at least one instruction word and a plurality of configuration data words, and the erroneous bitstream word comprises a configuration data word.
6. The method of claim 1, wherein:
the configuration bitstream comprises a plurality of bitstream words; and
changing the value of at least one bit in the configuration bitstream comprises changing the value of at least one bit in an erroneous bitstream word after receiving at least one additional bitstream word.
7. The method of claim 1, wherein changing the value of at least one bit in the configuration bitstream occurs after receiving an entirety of the configuration bitstream.
8. The method of claim 1, wherein at least one of the first and second error correcting codes is a product code.
9. The method of claim 1, wherein:
the configuration bitstream comprises a plurality of bitstream words comprising at least one instruction word and a plurality of configuration data words; and
each of the configuration data words has a size equal to a size of a configuration frame for the PLD.
10. The method of claim 1, wherein the first error correcting code is a Hamming code and the second error correcting code is a product code.
11. The method of claim 1, wherein receiving the configuration bitstream comprises receiving an encrypted bitstream, the method further comprising:
decrypting the configuration bitstream after receiving the configuration bitstream and prior to retrieving the first and second error correcting codes.
12. The method of claim 1, wherein receiving the configuration bitstream comprises receiving an encrypted bitstream, the method further comprising:
decrypting the configuration bitstream after the receiving, the retrieving, and the changing and prior to the configuring.
13. The method of claim 1, further comprising:
prior to receiving the configuration bitstream, encrypting the configuration bitstream and transmitting the encrypted configuration bitstream to the PLD; and
after receiving the configuration bitstream, decrypting the configuration bitstream.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of manufacturing a complimentary metal-oxide semiconductor (CMOS) circuit on a semiconductor substrate of a first conductivity type to adjust threshold voltages (VT) of devices in the circuit, the method comprising:
forming a first photoresist mask on a surface of the substrate, the first photoresist mask defining a well boundary around an area in which a well is to be formed;
implanting ions into the substrate at an angle substantially perpendicular to the surface of the substrate to form a well of a second conductivity type in the substrate, wherein a region proximal to the well boundary is effected by lateral scattering by the first photoresist mask of the ions implanted to form the well; and
forming at least one of the devices in the region proximal to the well boundary which is effected by lateral scattering, wherein a channel of the device is formed by implanting ions into the substrate at an acute angle to the surface thereof to shadow the portion of the channel from at least some of the ions implanted to form the channel.
2. A method according to claim 1, wherein forming the channel of one of the devices comprises:
implanting a first portion of a total dose to be implanted to form the channel;
rotating the substrate around a rotation axis perpendicular to the surface of the substrate; and
implanting a second portion of the total dose to be implanted.
3. A method according to claim 1, wherein the step of forming the channel of one of the devices comprises:
implanting a fraction of a total dose to be implanted to form the channel equal to about the (total dose)N, where N is a whole number greater than 1;
rotating the substrate around a rotation axis perpendicular to the surface of the substrate by an angle equal to about 360\xb0N and implanting another fraction of the total dose equal to about the (total dose)N; and
repeating the rotating until the total dose has been implanted.
4. A method according to claim 3, wherein N is at least 4.
5. A method according to claim 3, wherein forming the channel comprises tilting the surface of substrate relative to a direction from which ions to be implanted are accelerated to implant ions into the substrate at an angle of from about 30\xb0 to about 60\xb0 to the surface thereof.
6. A method according to claim 5, wherein the angle by which the substrate is tilted and N are selected to control the VT of the device having a channel at least a portion of which is formed in the region proximal to the well boundary that is effected by lateral scattering.
7. A method according to claim 1, wherein forming at least a portion of a channel of at least one of the devices comprises forming a second photoresist mask on the surface of the substrate to define the channel of the at least one of the devices in the region proximal to the well boundary before implanting ions into the substrate to form the channel, and wherein the second photoresist mask shadows the portion of the channel from at least some of the ions implanted to form the channel.
8. A method according to claim 1, wherein forming a first photoresist mask on a surface of the substrate, comprises forming a first photoresist mask defining a well boundary around an area in which a well is to be formed, and defining the channel of the at least one of the devices in the region proximal to the well boundary before implanting ions into the substrate to form the well, and wherein the first photoresist mask shadows the portion of the channel from at least some of the ions implanted to form the channel.
9. A method of manufacturing a complimentary metal-oxide-semiconductor (CMOS) circuit including a number of devices on a semiconductor substrate of a first conductivity type, the method comprising:
forming a first photoresist mask on a surface of the substrate using a photolithographic process from a reticule having a drawn well boundary, the first photoresist mask defining a well boundary around an area in which a well is to be formed;
implanting ions into the substrate at an angle substantially perpendicular to the surface of the substrate to form a well of a second conductivity type in the substrate, wherein a region proximal to the well boundary which is effected by lateral scattering by the first photoresist mask of the ions implanted to form the well;
forming at least one of the devices in the region proximal to the well boundary which is effected by lateral scattering, wherein a channel of the device is formed by implanting ions into the substrate at an acute angle to the surface thereof to shadow the portion of the channel from at least some of the ions implanted to form the channel; and
wherein the location of the drawn well boundary and the acute angle at which ions are implanted into the substrate to form the channel are selected to control threshold voltages (VT) of devices in the circuit proximal to the well boundary.
10. A method according to claim 9, the acute angle at which ions are implanted into the substrate to form the channel is selected based on the location of the drawn well boundary, the further the drawn well boundary is away from the nearest of the devices the closer the acute angle is to perpendicular to the surface of the substrate.
11. A method according to claim 9, wherein forming the channel of one of the devices comprises:
implanting a fraction of a total dose to be implanted to form the channel equal to about the (total dose)N, where N is a whole number greater than 1;
rotating the substrate around a rotation axis perpendicular to the surface of the substrate by an angle equal to about 360\xb0N and implanting another fraction of the total dose equal to about the (total dose)N; and
repeating the rotating until the total dose has been implanted.
12. A method according to claim 11, wherein N is at least 4.
13. A method according to claim 9, wherein forming the channel comprises tilting the surface of substrate at an angle of from about 3 to about 60 relative to direction from which ions to be implanted to form the channel are accelerated.
14. A method according to claim 9, wherein forming at least a portion of a channel of at least one of the devices comprises forming a second photoresist mask on the surface of the substrate to define the channel of the at least one of the devices in the region proximal to the well boundary before implanting ions into the substrate to form the channel, and wherein the second photoresist mask shadows the portion of the channel from at least some of the ions implanted to form the channel.
15. A method according to claim 9, wherein forming a first photoresist mask on a surface of the substrate, comprises forming a first photoresist mask defining a well boundary around an area in which a well is to be formed, and defining the channel of the at least one of the devices in the region proximal to the well boundary before implanting ions into the substrate to form the well, and wherein the first photoresist mask shadows the portion of the channel from at least some of the ions implanted to form the channel.