Author: claimsbot

1. Polyimides having improved thermal-oxidative stability derived from the polymerization of effective amounts of at least one polyamine, at least one tetracarboxylic dianhydride and a dicarboxylic endcap having a formula:
wherein R1 is selected from the group consisting of an alkyl, fluoroalkyl, aryl, fluoroaryl, OR, carboxy, nitro, cyano, R\u2014N\u2014R, SO3R, PO4R, F and Cl radicals where R is selected from the group consisting of hydrogen, an aryl radical, and an alkyl radical of 1 to 6 carbons; and wherein R2, R3, R4, R5, R6, R7, and R8 are the same or different radicals selected from the group consisting of hydrogen, alkyl, fluoroalkyl, aryl, fluoroaryl, OR, carboxy, nitro, cyano, R\u2014N\u2014R, SO3R, PO4R, F and Cl radicals where R is selected from the group consisting of hydrogen, an aryl radical, and an alkyl radical of 1 to 6 carbon atoms.
2. Polyimides having improved thermal-oxidative stability derived from the polymerization of effective amounts of at least one polyamine, at least one tetracarboxylic dianhydride and a dicarboxylic endcap having a formula:
wherein R2 and R3 are the same or different radicals selected from the group consisting of alkyl, fluoroalkyl, aryl, fluoroaryl, OR, carboxy, nitro, cyano, R\u2014N\u2014R, SO3R, PO4R, F and Cl radicals where R is selected from the group consisting of hydrogen, an aryl radical, and an alkyl radical of 1 to 6 carbons; and wherein, R1, R4, R5, R6, R7, R8 are the same or different radicals selected from the group consisting of hydrogen, alkyl, fluoroalkyl, aryl, fluoroaryl, OR, carboxy, nitro, cyano, R\u2014N\u2014R, SO3R, PO4R, F and Cl radicals where R is selected from the group consisting of hydrogen, an aryl radical, and an alkyl radical of 1 to 6 carbons.
3. The polyimide of claim 1 wherein the dicarboxylic endcap is 2,3-dimethyl-1,2,3,6-tetrahydrophthalic anhydride.
4. The polyimide of claim 1 wherein the dicarboxylic endcap is 1,3-dimethyl-1,2,3,6-tetrahydrophthalic anhydride.
5. The polyimide of claim 1 wherein the dicarboxylic endcap is 3,3-dimethyl-1,2,3,6-tetrahydrophthalic anhydride.
6. The polyimides of claim 1 wherein the polyamine is an aromatic polyamine.
7. The polyimide of claim 6 wherein the aromatic polyamine is an aromatic diamine.
8. The polyimide of claim 6 wherein the aromatic polyamine is 4,4\u2032-methylene dianiline.
9. The polyimide of claim 8 wherein the tetracarboxylic dianhydride is 3,3\u2032,4,4\u2032-benzophenonetetracarboxylic dianhydride.
10. The polyimide of claim 9 wherein the dicarboxylic endcap is 2,3-dimethyl-1,2,3,6-tetrahydrophthalic anhydride.
11. The polyimides of claim 2 wherein the polyamine is 4,4\u2032-methylene dianiline.
12. The polyimides of claim 11 wherein the tetracarboxylic dianhydride is 3,3\u2032,4,4\u2032-benzophenonetetracarboxylic dianhydride.
13. The polyimides of claim 12 wherein the dicarboxylic endcap is 2,3-dimethyl-1,2,3,6-tetrahydrophthalic anhydride.
14. The process of preparing polyimides having improved thermal-oxidative stability derived from the polymerization of effective amounts of at least one aromatic polyamine, at least one tetracarboxylic dianhydride and a dicarboxylic endcap having a formula:
wherein R1 is a radical selected from the group consisting of an alkyl, fluoroalkyl, aryl, fluoroaryl, OR, carboxy, nitro cyano, R\u2014N\u2014R, SO3R, PO4R, F and Cl radicals where R is selected from the group consisting of hydrogen, aryl radicals and alkyl radicals of 1 to 6 carbons; and wherein R2, R3, R4, R5, R6, R7, and R8 are the same or different radicals selected from the group consisting of hydrogen, alkyl, fluoroalkyl, aryl, fluoroaryl, OR, carboxy, nitro, cyano, R\u2014N\u2014R, SO3R, PO4R, F and Cl radicals where R is selected from the group consisting of hydrogen, aryl radicals and alkyl radicals of 1 to 6 carbons.
15. The process of claim 14 wherein the aromatic polyamine is 4,4\u2032-methylene dianiline.
16. The process of claim 15 wherein the tetracarboxylic dianhydride is 3,3\u2032,4,4\u2032-benzophenonetetracarboxylic dianhydride.
17. The process of claim 16 wherein the dicarboxylic endcap is 2,3-dimethyl-1,2,3,6-tetrahydrophthalic anhydride.
18. The process of claim 14 wherein R2 and R3 are the same or different radicals selected from the group consisting of alkyl, fluoroalkyl, aryl, fluoroaryl, OR, carboxy, nitro, cyano, R\u2014N\u2014R, SO3R, PO4R, F and Cl radicals where R is selected from the group consisting of hydrogen, aryl radicals and alkyl radicals of 1 to 6 carbons, and wherein R1, R4, R5, R6, R7, R8, are the same or different radicals selected from the group consisting of hydrogen, alkyl, fluoroalkyl, aryl, fluoroaryl, OR, carboxy, nitro, cyano, R\u2014N\u2014R, SO3R, PO4R, F and Cl radicals where R is selected from the group consisting of hydrogen, aryl radicals and alkyl radicals of 1 to 6 carbons.
19. Fiber-reinforced high-temperature polyimide matrix composites comprising a fibrous material impregnated with an effective amount of a polyimide having improved thermal-oxidative stability; said polyimide derived from the polymerization of at least one polyamine, at least one tetracarboxylic dianhydride and a dicarboxylic endcap having the formula:
wherein R1 is selected from the group consisting of an alkyl, fluoroalkyl, aryl, fluoroaryl, OR, carboxy, nitro, cyano, R\u2014N\u2014R, SO3R, PO4R, F and Cl radicals where R is selected from the group consisting of hydrogen, an aryl radical, and an alkyl radical of 1 to 6 carbons; and wherein R2, R3, R4, R5, R6, R7, and R8 are the same or different radicals selected from the group consisting of hydrogen, alkyl, fluoroalkyl, aryl, fluoroaryl, OR, carboxy, nitro, cyano, R\u2014N\u2014R, SO3R, PO4R, F and Cl radicals, where R is selected from the group consisting of hydrogen, an aryl radical, and an alkyl radical of 1 to 6 carbon atoms.
20. The composites of claim 19 wherein the fiberous material comprises carbon fibers.
21. The composites of claim 19 wherein the fiberous materials comprises glass fibers.
22. A process of preparing a fiber-reinforced prepreg which comprises impregnating a fiberous material with an effective amount of a polyimide prepolymer derived from at least one polyamine, at least one tetracarboxylic dianhydride and a dicarboxylic endcap having the formula:
wherein R1 is selected from the group consisting of an alkyl, fluoroalkyl, aryl, fluoroaryl, OR, carboxy, nitro, cyano, R\u2014N\u2014R, SO3R, PO4R, F and Cl radicals where R is selected from the group consisting of hydrogen, an aryl radical, and an alkyl radical of 1 to 6 carbons; and wherein R2, R3, R4, R5, R6, R7, and R8 are the same or different radicals selected from the group consisting of hydrogen, alkyl, fluoroalkyl, aryl, fluoroaryl, OR, carboxy, nitro, cyano, R\u2014N\u2014R, SO3R, PO4R, F and Cl radicals, where R is selected from the group consisting of hydrogen, an aryl radical, and an alkyl radical of 1 to 6 carbon atoms.
23. The prepreg obtained by the process of claim 22

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A CMOS compatible method for manufacturing a Group III-nitride HEMT having a gate electrode and Au-free source and drain ohmic contacts, comprising:
a) providing a substrate;
b) forming a stack of Group III-nitride layers on the substrate;
c) forming a first passivation layer comprising silicon nitride overlying and in contact with an upper layer of the stack of Group III-nitride layers, wherein the first passivation layer is deposited at a temperature between 900\xb0 C. and 1250\xb0 C. by a first chemical vapor deposition technique, and wherein the first passivation layer is deposited in-situ with the stack of Group III-nitride layers;
d) forming a dielectric layer overlying and in contact with the first passivation layer, the dielectric layer comprising a high-k dielectric material;
e) forming a second passivation layer comprising silicon nitride overlying and in contact with the dielectric layer, wherein the second passivation layer is deposited at a temperature higher than 450\xb0 C. by a second chemical vapor deposition technique; and thereafter
f) forming source and drain ohmic contacts, and a gate electrode in such a way that a gate dielectric is formed comprising the first passivation layer and at least part of the dielectric layer, wherein forming source and drain ohmic contacts comprises patterning source and drain ohmic contact regions by selectively etching the second passivation layer, the dielectric layer, and the first passivation layer, and forming ohmic contacts by deposition of an Au-free metal layer, patterning the metal layer, and forming an ohmic alloy at a temperature between 500\xb0 C. and 850\xb0 C. and below a crystallization temperature of the high-k material of the gate dielectric, wherein forming the gate electrode comprises patterning a gate trench by selective etching of the second passivation layer towards the dielectric layer and forming the gate electrode in the gate trench by deposition of a metal gate layer and patterning the metal gate layer such that the second passivation layer is thinner in an exposed region between an edge of the gate electrode and the source and drain contacts when compared to an original thickness as-deposited in regions covered by the gate electrode.
2. The method of claim 1, wherein at least one of the first passivation layer and the second passivation layer comprises Si3N4.
3. The method of claim 1, wherein the second chemical vapor deposition technique is selected from the group consisting of low pressure chemical vapor deposition and metal organic chemical vapor deposition.
4. The method of claim 1, wherein patterning the metal layer comprises a dry-etch process of the metal layer wherein the dry-etch process of the metal layer consumes partially the second passivation layer.
5. The method of claim 1, wherein patterning the metal gate layer comprises a dry-etch process of the metal gate layer wherein the dry-etch process of the metal gate layer consumes partially the second passivation layer.
6. The method of claim 1, further comprising: forming a dielectric cap layer on whichever is formed first of the source and drain ohmic contacts or the gate electrode, thereby protecting the source and drain ohmic contacts or the gate electrode during a subsequent metal layer or metal gate layer deposition.
7. The method of claim 1, wherein the dielectric layer comprises Al.
8. The method of claim 7, wherein the dielectric layer comprises Al2O3.
9. The method of claim 1, wherein the first passivation layer has a thickness of at least 0.5 nm.
10. The method of claim 1, wherein the second passivation layer has a thickness of at least 50 nm.
11. The method of claim 1, wherein the first passivation layer is deposited at a temperature of 1100\xb0 C.

1. A method for generating shapes for a plurality of lithographic masks from design shapes for a design level, said method comprising processing steps of:
a first step of providing a design layout for a design level including design shapes, wherein lengthwise portions of said design shapes overlie line tracks extending along a lengthwise direction;
a second step of identifying said line tracks as mandrel-type line tracks and non-mandrel-type line tracks;
a third step of identifying design shapes as mandrel-type design shapes and non-mandrel-type design shapes, wherein all lengthwise edges of mandrel-type design shapes are within mandrel-type line tracks and all lengthwise edges of non-mandrel-type design shapes are within non-mandrel-type line tracks; and
a fourth step of generating mandrel design shapes by performing a union of said mandrel-type line tracks and said mandrel-type design shapes and then subtracting areas derived from lateral straps of non-mandrel-type design shapes by expansion by a spacer target width, wherein at least one step among said second, third, and fourth steps is performed employing a computer including one or more processors in communication with a memory device and programmed to perform said at least one step.
2. The method of claim 1, further comprising generating sidewall design shapes by offsetting edges of said mandrel design shapes by said spacer target width.
3. The method of claim 2, further comprising generating block mask shapes defined by adding all areas that do not overlap with said design shapes or said sidewall design shapes.
4. The method of claim 2, further comprising generating block mask shapes by:
generating a union of said design shapes and said sidewall design shapes; and
generating a complement of said union, wherein said complement constitutes said block mask shapes.
5. The method of claim 1, wherein said identified line tracks constitute an alternating array of mandrel-type line tracks and non-mandrel-type line tracks.
6. The method of claim 1, wherein each of said design shapes is located on a single line track or includes a lateral strap that straddles only one line track or an odd number of line tracks.
7. The method of claim 7, wherein all lateral straps that straddle any line track includes a pair of edges that are perpendicular to said lengthwise direction.
8. The method of claim 1, wherein a spacing between a neighboring pair of line tracks is the same as said spacer target width.
9. The method of claim 1, wherein each spacing between a neighboring pair of line tracks is the same as said spacer target width or is at least two times said spacer target width.
10. The method of claim 1, wherein all vertices of said design shapes are on lengthwise edges of said line tracks that said design shapes overlie.
11. A system for generating shapes for a plurality of lithographic masks from design shapes for a design level, said system comprising a computer including one or more processors in communication with a memory device, said computer programmed to run an automated program, said automatic program comprising instructions which, when executed by said computer, performs processing steps including:
a first step of acquiring a design layout for a design level including design shapes, wherein lengthwise portions of said design shapes overlie line tracks extending along a lengthwise direction;
a second step of identifying said line tracks as mandrel-type line tracks and non-mandrel-type line tracks;
a third step of identifying design shapes as mandrel-type design shapes and non-mandrel-type design shapes, wherein all lengthwise edges of mandrel-type design shapes are within mandrel-type line tracks and all lengthwise edges of non-mandrel-type design shapes are within non-mandrel-type line tracks; and
a fourth step of generating mandrel design shapes by performing a union of said mandrel-type line tracks and said mandrel-type design shapes and subtracting areas derived from lateral straps of non-mandrel-type design shapes by expansion by a spacer target width.
12. The system of claim 11, wherein said processing steps performed by said instructions further includes a processing step of generating sidewall design shapes by offsetting edges of said mandrel design shapes by said spacer target width.
13. The system of claim 12, wherein said processing steps performed by said instructions further includes a processing step of generating block mask shapes defined by adding all areas that do not overlap with said design shapes or said sidewall design shapes.
14. The system of claim 12, wherein said processing steps performed by said instructions further includes a processing step of generating block mask shapes by:
generating a union of said design shapes and said sidewall design shapes; and
generating a complement of said union, wherein said complement constitutes said block mask shapes.
15. The system of claim 11, wherein said identified line tracks constitute an alternating array of mandrel-type line tracks and non-mandrel-type line tracks.
16. The system of claim 11, wherein each of said design shapes is located on a single line track or includes a lateral strap that straddles only one line track or an odd number of line tracks.
17. The system of claim 17, wherein all lateral straps that straddle any line track includes a pair of edges that are perpendicular to said lengthwise direction.
18. The system of claim 11, wherein a spacing between a neighboring pair of line tracks is the same as said spacer target width.
19. The system of claim 11, wherein each spacing between a neighboring pair of line tracks is the same as said spacer target width or is at least two times said spacer target width.
20. The system of claim 11, wherein all vertices of said design shapes are on lengthwise edges of said line tracks that said design shapes overlie.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A communication device configured to facilitate a mesh network comprising a media independent mesh function (MIMF) configured to exchange media independent mesh information between peer mesh entities.
2. The communication device of claim 1 further comprising more than one physical network links.
3. The communication device of claim 2 wherein the more than one physical network links are configured to communicate directly with the MIMF.
4. The communication device of claim 3 further comprising a media dependent mesh function and upper layer functions.
5. The communication device of claim 4 wherein the MIMF is configured to operate between the physical network links and the media dependent mesh function.
6. The communication device of claim 1 wherein the MIMF is configured to communicate with peer devices.
7. The communication device of claim 1 wherein the MIMF is configured to determine a mesh capability of a peer device.
8. The communication device of claim 1 wherein the MIMF is configured to monitor a plurality of radio access technologies (RATs) and report changes in peer device status.
9. The communication device of claim 1 wherein the MIMF is configured to compare a plurality of physical links from a plurality of RATs.
10. The communication device of claim 1 wherein the MIMF is configured to schedule data transfer across a mesh network.
11. The communication device of claim 1 wherein the MIMF is configured to determine a link cost estimate.
12. The communication device of claim 1 wherein the MIMF is configured to selectively activate a RAT and adjust a bandwidth between the device and a second device.
13. A method of communicating between multiple radio access technologies (RATs) in a mesh network, the method comprising:
a media independent multi-RAT function (MIMF) coordinating data flow between a plurality of mesh nodes; and
the plurality of mesh nodes transferring data based on a plurality of MIMF instructions and measurements.
14. The method of claim 13 wherein the MIMF is placed between a RAT layer and a mesh network layer.
15. The method of claim 13 further comprising the MIMF selecting a RAT based on a metric.
16. The method of claim 15 wherein the metric comprises at least one of quality of service, battery level of a device, RAT capability of a device.
17. The method of claim 13 further comprising the MIMF transmitting mesh data to a second MIMF, wherein the second MIMF resides in a separate mesh device.
18. The method of claim 13 further comprising the MIMF monitoring each RAT in the network and reporting changes in peer node status to a plurality of MIMFs residing in a plurality of mesh devices.
19. The method of claim 13 further comprising the MIMF determining a standardized measure of signal quality and tracking the standardized measure for all mesh nodes.
20. The method of claim 13 further comprising the MIMF adjusting bandwidth between devices by selectively activating and deactivating a RAT.